Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI13N95K3

Name: STFI13N95K3
Brand: STMicroelectronics
SKU: STFI13N95K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STFI13N95K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI13N95K3.pdf

Description:: MOSFET N CH 950V 10A I2PAKFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:290

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STFI13N95K3 from STMicroelectronics is an N-channel 950 V, 680 mΩ typ. (850 mΩ max), 10 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features 100% avalanche tested ruggedness, 9 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STFI13N95K3 datasheet, STFI13N95K3 pinout, STFI13N95K3 application, or STFI13N95K3 equivalent, this page delivers verified electrical specs, thermal performance data, diode recovery behavior, safe operating area limits, and real-world switching timing under 475 V/5 A conditions with 4.7 Ω gate resistor.

Technical Context

This device implements ST's third-generation MDmesh K3 vertical superjunction architecture, optimized for reduced specific on-resistance and minimized output capacitance (Coss = 117 pF typ.). Its low Crss (1.2 pF) and high dv/dt immunity enable stable operation in hard-switched topologies without spurious turn-on.

The integrated source-drain diode exhibits improved reverse recovery (trr = 500 ns typ., Qrr = 9 µC at TJ = 25 °C), enabling efficient operation in quasi-resonant and LLC converters where body diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Supports 800 V DC bus designs with 150 V margin for voltage spikes in industrial AC-DC front-ends.
R_DS(on) max	850 mΩ - Enables <1.5 W conduction loss at 10 A continuous drain current (T_C = 25 °C).
I_D cont	10 A - Rated for sustained operation in 1–2 kW power supplies with heatsink cooling.
E_AS	400 mJ - Withstands single-pulse unclamped inductive energy events up to 400 mJ without failure.
C_iss/C_oss/C_rss	1620 / 117 / 1.2 pF - Low Crss minimizes Miller effect; Coss enables predictable snubber design in flyback/ZVS circuits.
Q_g/Q_gd	51 / 30 nC - Gate charge profile supports fast switching with moderate gate drive strength (e.g., 1–2 A peak).
trr/Qrr	500 ns / 9 µC - Fast, low-charge body diode reduces dead-time losses and EMI in bridge-leg configurations.

Pinout & Package

TO-220FP package: insulated case, vertical mounting, 3-pin outline with integral heat sink tab. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Control input requiring ±30 V absolute max; 4 V typical threshold enables 5 V logic-level drive compatibility.
Pin 2 (D)	Drain terminal (connected to metal tab)	Main high-side switching node; tab must be electrically isolated from heatsink unless referenced to drain potential.
Pin 3 (S)	Source terminal	Power return path and gate reference; low-inductance layout critical for dv/dt stability and switching noise control.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against overvoltage transients in unregulated or fault-prone systems without external clamping.
Extremely high dv/dt capability	9 V/ns rated slope prevents false turn-on during fast-rising drain edges in high-frequency hard-switched converters.
Very low intrinsic capacitance	Coss = 117 pF and Crss = 1.2 pF reduce switching losses and improve efficiency above 100 kHz operation.
Zener-protected gate	Integrated gate oxide protection eliminates need for external Zener clamp in most gate driver designs.
Improved diode reverse recovery	Qrr = 9 µC and trr = 500 ns lower than prior MDmesh generations, reducing body-diode conduction losses in half-bridge topologies.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1.5 kW active-clamp forward or asymmetric half-bridge converter.

IC Role / Device Role / Timing Role: High-voltage switching element handling 800 V DC bus with 100 kHz PWM duty cycling.

Use Value: 950 V rating and 400 mJ EAS ensure reliable operation during line surges and load dump events.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 10 A RMS current.

Use Value: Low R_DS(on) (680 mΩ typ.) minimizes conduction loss at full load; Zener gate protection simplifies driver design.

Motor Drive Inverters

High-Voltage DC-DC Converters

Use Scenario: Upper-leg IGBT replacement in 400–690 V three-phase inverter for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching device in 6–12 kHz PWM-driven leg with bidirectional body diode conduction.

Use Value: Optimized trr (500 ns) and Qrr (9 µC) reduce shoot-through risk and commutation losses during freewheeling.

Use Scenario: Primary switch in isolated 1 kV output DC-DC converter for EV battery chargers.

IC Role / Device Role / Timing Role: Hard-switched flyback or forward topology switch operating at 65–130 kHz with 950 V blocking.

Use Value: Low Coss (117 pF) enables precise snubber tuning; TO-220FP insulation withstands 2.5 kV RMS to heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N95K3	Same die, TO-220 package (non-isolated tab); R_thJC = 0.66 °C/W vs. 3.13 °C/W for TO-220FP.	Requires direct thermal coupling to heatsink; unsuitable where isolation or creepage distance is mandated.	Select when mechanical mounting allows direct tab-to-heatsink contact and isolation is not required.
STW13N95K3	Same die, TO-247 package; higher power dissipation (190 W vs. 40 W), lower R_thJC = 0.66 °C/W.	Supports >15 A pulsed operation and higher ambient temperature environments (e.g., enclosed industrial enclosures).	Select for >1 kW designs needing superior thermal headroom and higher reliability margin under sustained load.

Compared with STP13N95K3 and STW13N95K3, STFI13N95K3 offers certified 2.5 kV RMS insulation and compact TO-220FP form factor-ideal for space-constrained, safety-critical AC-DC front-ends where galvanic isolation between drain and heatsink is mandatory.

Availability

STFI13N95K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STFI13N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to the MDmesh K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–1000 V industrial and server power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI13N95K3 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6262 Rev 4. This derating reflects thermal limitations of the TO-220FP package, where junction-to-case resistance is 3.13 °C/W and maximum junction temperature is 150 °C.

Does STFI13N95K3 include integrated gate protection?

Yes - it integrates a Zener diode between gate and source to clamp transient overvoltage, protecting the gate oxide from damage due to ESD or Miller-induced spikes. The absolute maximum V_GS remains ±30 V, and no external gate Zener is required in standard gate driver implementations.

How does its body diode performance compare to previous MDmesh generations?

Compared to MDmesh K2 devices, STFI13N95K3 shows 30% lower Qrr (9 µC vs. ~13 µC) and 20% faster trr (500 ns vs. ~625 ns) at identical test conditions (I_SD = 10 A, di/dt = 100 A/µs). This improvement stems from optimized epitaxial layer doping and tailored lifetime control in the body diode region.

Can STFI13N95K3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (117 pF typ.) and predictable C_oss voltage dependence (Figure 11) enable accurate resonant timing in LLC and phase-shifted full-bridge converters. The 9 V/ns dv/dt rating ensures stable gate control during ZVS transitions without unintended turn-on.

STFI13N95K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI13N95K3 FAQ

1.How can I place an order for STFI13N95K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI13N95K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI13N95K3 reliable?

The price and inventory of STFI13N95K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI13N95K3 is usually 5 days.

3.What payment methods are accepted for STFI13N95K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI13N95K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI13N95K3?

STFI13N95K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI13N95K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI13N95K3?

For technical support, including STFI13N95K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI13N95K3 requirements.

6.How does Aetrix verify that STFI13N95K3 is sourced from the original manufacturer or authorized distributors?

All STFI13N95K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI13N95K3 meets industry standards.

7.What is the process for return or replacement of STFI13N95K3?

All STFI13N95K3 units undergo pre-shipment inspection (PSI). If there is an issue with STFI13N95K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI13N95K3 part is unused and in its original packaging.

Return procedure for STFI13N95K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…