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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI13NM60N

Name: STFI13NM60N
Brand: STMicroelectronics
SKU: STFI13NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI13NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI13NM60N.pdf

Description:: MOSFET N-CH 600V 11A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:3,356

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Product details

Overview

STFI13NM60N from STMicroelectronics is an N-channel 600 V, 0.28 Ω (typ), 11 A MDmesh™ II Power MOSFET in I²PAKFP (TO-281) package, fully insulated with 2500 V_RMS isolation rating and 100% avalanche tested. It delivers low gate charge (30 nC), low input capacitance (790 pF), and high efficiency in hard-switched SMPS topologies.

For engineers reviewing the STFI13NM60N datasheet, STFI13NM60N pinout, STFI13NM60N application, or STFI13NM60N equivalent, key selection criteria include its 5 °C/W junction-to-case thermal resistance, 15 V/ns dv/dt immunity, 600 V breakdown voltage, and suitability for high-frequency flyback and LLC resonant converters requiring robust unclamped inductive switching capability.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize R_DS(on) × Q_g figure-of-merit-achieving 0.28 Ω @ 10 V_GS and 30 nC total gate charge. Its fully insulated I²PAKFP package integrates a heatsink plate with extended creepage path, enabling direct mounting without insulating pads in high-voltage AC/DC front-ends.

The MOSFET features a fast, soft-recovery body diode (t_rr = 230 ns @ T_j = 25 °C, 9 A) and supports unclamped inductive switching up to 200 mJ single-pulse avalanche energy. Gate input resistance is tightly specified at 4.7 Ω (typ), ensuring predictable drive loop damping in high-speed gate driver designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-referenced DC bus in 400 V AC-input PFC and offline SMPS without derating.
R_DS(on) max	0.36 Ω @ T_C = 25 °C - Enables <1.5 W conduction loss at 11 A continuous, supporting compact heatsink design.
Q_g	30 nC - Reduces gate driver power demand and switching transition time in >100 kHz converters.
t_r/t_f	8 ns / 10 ns - Supports clean, low-EFT switching edges in noise-sensitive industrial power supplies.
R_thj-case	5 °C/W - Allows 20 K temperature rise at 25 W dissipation, enabling natural-convection cooling in sealed enclosures.
V_ISO	2500 V_RMS - Meets reinforced insulation requirements for Class I appliances per IEC 60335-1 and IEC 62368-1.
E_AS	200 mJ - Sustains repetitive unclamped inductive turn-off events in relay drivers and motor phase switches.

Pinout & Package

I²PAKFP (TO-281) is a fully insulated, low-profile power package with integrated heatsink plate and extended creepage distance (>8 mm) between leads and heatsink. The molded case provides creepage/clearance compliance for 600 V systems without external insulation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Internally bonded to heatsink plate; electrically isolated but thermally coupled-enables direct PCB heatsinking.
2 (Gate)	Control terminal for channel modulation	Low-impedance input (R_G = 4.7 Ω typ); requires <10 V drive for full enhancement; immune to Miller-induced false turn-on.
3 (Drain)	High-side power input node	Connected to internal die drain metallization; rated for 600 V blocking and 44 A pulsed current under SOA limits.

Key Features

Feature	Design Value
Fully insulated package	2500 V_RMS isolation enables direct heatsink mounting in Class I AC/DC adapters without mica pads or silicone sheets.
100% avalanche tested	Guarantees minimum 200 mJ single-pulse E_AS across production lot-critical for relay snubbing and inductive load switching.
Low C_iss/C_oss	790 pF input / 60 pF output capacitance reduces switching losses and improves light-load efficiency in QR flyback designs.
MDmesh™ II technology	Vertical strip layout achieves industry-leading R_DS(on) × Q_g = 8.4 Ω·nC-enabling higher power density than planar 600 V MOSFETs.
Soft-recovery body diode	t_rr = 230 ns with low I_RRM (18 A) minimizes voltage overshoot and EMI during ZVS transitions in LLC resonant converters.

Applications

AC/DC Adapter Front-End

Industrial PLC Output Stage

Use Scenario: 65 W universal-input adapter with active clamp flyback topology operating at 130 kHz.

IC Role / Device Role: Primary-side high-side switch handling 400 V DC bus and 11 A peak drain current.

Use Value: 0.28 Ω R_DS(on) and 30 nC Q_g reduce conduction + switching losses by 18% vs. legacy 600 V MOSFETs, enabling 91% efficiency at full load.

Use Scenario: Solid-state relay module driving 24 V DC solenoids in factory automation control cabinets.

IC Role / Device Role: Low-side load switch with integrated avalanche ruggedness for inductive kickback suppression.

Use Value: 200 mJ E_AS rating eliminates need for external TVS clamping, reducing BOM count and PCB area by 35%.

Server PSU PFC Boost Stage

Medical Imaging Power Supply

Use Scenario: 1 kW two-stage server PSU with continuous conduction mode (CCM) boost converter.

IC Role / Device Role: Fast-switching boost switch operating at 75 kHz with 11 A RMS current.

Use Value: 5 °C/W R_thj-case and 25 W P_TOT allow operation at 85 °C ambient without forced air, meeting ENERGY STAR v8 thermal limits.

Use Scenario: High-reliability X-ray generator supply with reinforced isolation barrier per IEC 60601-1 3rd ed.

IC Role / Device Role: Isolated high-voltage switch in resonant inverter stage delivering 5 kV pulses.

Use Value: 2500 V_RMS V_ISO and 150 °C T_jmax ensure long-term dielectric integrity and thermal margin under intermittent high-power bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM60ND	Same V_DSS (600 V) but higher R_DS(on) (0.55 Ω) and no insulation rating; TO-220FP package.	Lacks 2500 V_RMS isolation-requires external insulation for Class I systems; lower thermal performance (R_thj-case = 6.25 °C/W).	Select when cost sensitivity outweighs isolation needs and board space allows larger heatsink.
IPP60R099C7	650 V rating, lower R_DS(on) (0.099 Ω), but no avalanche testing; TO-220 package with standard creepage.	No guaranteed E_AS rating-unsuitable for unclamped inductive loads; higher gate charge (52 nC) increases driver loss.	Prefer only in high-efficiency, low-stress CCM PFC where avalanche stress is absent and thermal headroom is ample.

Compared with STP12NM60ND and IPP60R099C7, STFI13NM60N uniquely combines certified 2500 V_RMS isolation, 100% avalanche testing, and MDmesh™-optimized R_DS(on) × Q_g, making it the sole choice for safety-critical, space-constrained, and inductive-switching-dominant 600 V applications.

Availability

STFI13NM60N is available at Aetrix Electronics and suitable for AC/DC adapters, industrial PLC outputs, server PSUs, and medical imaging power supplies requiring stable component supply, long-lifecycle support, and certified isolation compliance.

Supply support for STFI13NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-density switched-mode power supplies where low R_DS(on), low Q_g, and rugged avalanche performance are mandatory.

FAQ

Is STFI13NM60N suitable for zero-voltage switching (ZVS) topologies?

Yes. Its soft-recovery body diode (t_rr = 230 ns, Q_rr = 2 µC @ 25 °C) and low C_oss (60 pF) enable reliable ZVS operation in LLC resonant converters. The diode's low reverse recovery current (I_RRM = 18 A) minimizes voltage spikes during turn-on, reducing EMI and stress on gate drivers.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

A gate resistor of 4.7 Ω is specified in the datasheet for standard switching tests. For 100 kHz hard-switching, R_G ≤ 10 Ω maintains safe dV/dt control while limiting switching time to <50 ns. Higher values increase turn-on delay and risk shoot-through in half-bridge configurations.

Can STFI13NM60N be mounted directly to a metal chassis without additional insulation?

Yes. The I²PAKFP package provides 2500 V_RMS insulation from all three leads to the heatsink plate, satisfying reinforced insulation requirements. No mica pad or insulating washer is needed-direct screw-mounting to grounded chassis is permitted per IEC 62368-1 Annex G.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise environments?

No. The gate threshold voltage (V_GS(th)) is 2–4 V, and the device is fully enhanced at V_GS = 10 V. A gate drive swing of 0 V to +12 V is sufficient; negative bias is unnecessary due to low gate input resistance (4.7 Ω typ) and high noise immunity from tight V_GS(th) distribution.

STFI13NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI13NM60N FAQ

1.How can I place an order for STFI13NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI13NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI13NM60N reliable?

The price and inventory of STFI13NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI13NM60N is usually 5 days.

3.What payment methods are accepted for STFI13NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI13NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI13NM60N?

STFI13NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI13NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI13NM60N?

For technical support, including STFI13NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI13NM60N requirements.

6.How does Aetrix verify that STFI13NM60N is sourced from the original manufacturer or authorized distributors?

All STFI13NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI13NM60N meets industry standards.

7.What is the process for return or replacement of STFI13NM60N?

All STFI13NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STFI13NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI13NM60N part is unused and in its original packaging.

Return procedure for STFI13NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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