STMicroelectronics STFI14N80K5

Overview

STF14N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology in TO-220FP package, rated for 800 V V_DS, 445 mΩ R_DS(on) max at 10 V V_GS, and 12 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (22 nC), Zener-protected gate, and 100% avalanche tested - deployed in high-efficiency AC-DC adapters and industrial SMPS.

For engineers reviewing the STF14N80K5 datasheet, STF14N80K5 pinout, STF14N80K5 application, or STF14N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 4.2 °C/W junction-to-case thermal resistance, 270 mJ single-pulse avalanche energy, and rugged dv/dt performance up to 50 V/ns under MOSFET switching conditions.

Technical Context

This device implements a proprietary vertical MDmesh K5 structure that reduces specific on-resistance and gate charge simultaneously. Its 620 pF C_iss, 60 pF C_oss, and 0.8 pF C_rss enable fast, low-loss switching in hard-switched topologies.

The integrated source-drain diode supports synchronous rectification with 365 ns trr at 25 °C and 1.5 V forward drop at 12 A, while the 2.5 kV RMS insulation withstand voltage ensures safe isolation between leads and heatsink in high-voltage power stages.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heatsink tab; pin 1 = Gate, pin 2 = Drain, pin 3 = Source; designed for through-hole mounting with external heatsinking via tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF12N80K5, the STF14N80K5 delivers +1 A current capacity and −35 mΩ R_DS(on) at identical voltage and package; versus IPP65R099CFD7, it trades 150 V rating for 4× higher voltage safety margin in universal AC-input designs.

Availability

STF14N80K5 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and AC-DC adapters requiring stable component supply and long-term lifecycle support.

Supply support for STF14N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh K5 series targets high-voltage power conversion, emphasizing low R_DS(on) × Q_g figure-of-merit for improved efficiency and power density in offline SMPS and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF14N80K5 supports 7.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10983 Rev 3. This derating reflects thermal limitations of the TO-220FP package and must be applied in thermally constrained designs where heatsink temperature exceeds 25 °C.

Is the source-drain diode suitable for synchronous rectification?

Yes - the integrated body diode has 365 ns reverse recovery time at 25 °C and 1.5 V forward voltage at 12 A, enabling use in synchronous rectifier configurations. However, its Q_rr of 4.77 µC and I_RRM of 26 A require careful layout to minimize ringing in high-frequency topologies.

Does the TO-220FP package provide electrical isolation between leads and heatsink?

Yes - the TO-220FP (Type B) package features 2.5 kV RMS insulation withstand voltage from all three leads to the external heatsink, verified per IEC 60747-5-2. This eliminates need for insulating pads in many high-voltage mounting configurations.

How does the MDmesh K5 technology improve performance over standard superjunction MOSFETs?

MDmesh K5 uses an optimized vertical cell structure that reduces both specific on-resistance and gate charge simultaneously. This yields a 30% lower R_DS(on) × Q_g figure-of-merit than previous generations, directly improving efficiency in high-frequency, high-power-density applications like server PSUs.