STMicroelectronics STFI15N60M2-EP

Overview

STFI15N60M2-EP from STMicroelectronics is an N-channel 600 V, 11 A Power MOSFET with 0.340 Ω typ. R_DS(on), optimized for very high-frequency switching (>150 kHz) in SMPS and resonant converters. It features MDmesh™ M2 EP technology, 100% avalanche tested construction, Zener-protected gate, and I²PAKFP (TO-281) package with isolated heatsink mounting capability.

For engineers reviewing the STFI15N60M2-EP datasheet, STFI15N60M2-EP pinout, STFI15N60M2-EP application, or STFI15N60M2-EP equivalent, key selection criteria include its low 17 nC total gate charge, 148 pF equivalent output capacitance (C_oss,eq), 4.7 µJ typical turn-off energy at 400 V/1.5 A, 2500 V RMS insulation rating, and rugged 50 V/ns dv/dt capability.

Technical Context

This device employs ST's MDmesh™ M2 EP strip layout and enhanced vertical structure to simultaneously reduce conduction loss and optimize high-speed switching behavior. Its low C_oss,eq (148 pF) and minimized Q_gd/Q_g ratio (7.3/17 nC) enable efficient operation above 150 kHz while maintaining robust unclamped inductive switching performance.

The integrated Zener-protected gate withstands ±25 V transient stress, and the 2500 V RMS isolation between leads and heatsink supports reinforced insulation in offline AC-DC topologies. Avalanche-rated to 2.8 A repetitive current and 125 mJ single-pulse energy, it sustains hard-switching conditions without external snubbers.

Key Specifications

Pinout & Package

I²PAKFP (TO-281) is a surface-mount compatible, isolated heatsink package with internal creepage/clearance optimized for safety-critical AC-DC applications. The plastic body provides electrical isolation between drain (tab) and source/gate terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 600 V Power MOSFET applications.

Compared with STF15N60M2-EP, the TO-220FP variant trades isolation for lower assembly cost; compared with IPW60R041P7XKSA1, STFI15N60M2-EP delivers superior high-frequency efficiency due to its 17 nC Q_g and 148 pF C_oss,eq, making it optimal for designs prioritizing switching loss over conduction loss.

Availability

STFI15N60M2-EP is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and high-frequency UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STFI15N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage Power MOSFET product line, engineered specifically for ultra-high-frequency switching power conversion in space-constrained, efficiency-critical applications such as telecom rectifiers and server PSUs.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI15N60M2-EP supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the I²PAKFP package and ensures safe operation within the 150 °C maximum junction temperature under sustained load.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, it includes a monolithic source-drain diode rated for 11 A continuous and 44 A pulsed current. At T_j = 25 °C, reverse recovery time (t_rr) is 280 ns with 2.7 µC Q_rr; at 150 °C, t_rr increases to 400 ns and Q_rr to 3.8 µC - values confirmed in Table 9 and Figure 13.

Can the I²PAKFP package be mounted directly to a heatsink without electrical isolation?

Yes - the I²PAKFP package provides 2500 V RMS insulation between all three leads (D/G/S) and the external heatsink surface, as verified in Table 2. No insulating pad or washer is required, simplifying thermal design and reducing thermal resistance by up to 1.2 °C/W.

How does the 100% avalanche testing impact reliability in unclamped inductive switching?

Each unit undergoes single-pulse avalanche stress at 125 mJ and repetitive avalanche at 2.8 A, ensuring guaranteed ruggedness in flyback, forward, and LLC topologies where voltage overshoot may occur. This eliminates field failures due to unclamped inductive energy and removes the need for external TVS or RCD snubbers.