Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI15N65M5

Name: STFI15N65M5
Brand: STMicroelectronics
SKU: STFI15N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STFI15N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI15N65M5.pdf

Description:: MOSFET N CH 650V 11A I2PAKFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,396

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STFI15N65M5 from STMicroelectronics is an N-channel 650 V, 11 A MDmesh™ V Power MOSFET in I2PAKFP package, featuring 0.308 Ω typ. R_DS(on), 15 V gate threshold, and 100% avalanche tested operation. It delivers high dv/dt capability (15 V/ns), low switching losses, and is optimized for high-efficiency SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STFI15N65M5 datasheet, STFI15N65M5 pinout, STFI15N65M5 application, or STFI15N65M5 equivalent, this device is selected for high-voltage, medium-current switching where low conduction loss, robust unclamped inductive switching, and thermal reliability at T_j = 150 °C are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area performance. Its 650 V V_(BR)DSS rating supports universal-input offline applications up to 400 V DC bus.

The device integrates a fast, soft-recovery body diode (t_rr = 247 ns, Q_rr = 2.4 µC at T_j = 25 °C) and is characterized for stable operation under high di/dt (400 A/µs) and dv/dt stress, enabling reliable hard-switching in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands 650 V drain-source breakdown at 1 mA, enabling use in 380–400 V DC-link systems with margin.
R_DS(on) typ.	0.308 Ω @ V_GS = 10 V, I_D = 5.5 A - Delivers <1.9 W conduction loss at 11 A continuous, reducing heatsink size.
Q_g	22 nC - Enables efficient gate drive with standard 1–2 A peak drivers; low Q_gd/Q_g ratio improves EMI behavior.
t_r/t_f	30 ns / 8 ns - Fast voltage rise/fall times support >100 kHz switching without excessive overlap loss.
E_AS	160 mJ - Rated single-pulse avalanche energy ensures ruggedness during transient overvoltage events in inductive loads.
R_thj-case	1.47 °C/W - Low junction-to-case thermal resistance enables high power dissipation in compact I2PAKFP footprint.

Pinout & Package

I2PAKFP (TO-281) package: insulated case, vertical lead frame, 3-pin through-hole outline with electrically isolated tab (drain-connected). Mounting requires thermal interface material and mechanical clamping for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current.
2 (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing; driven by dedicated gate driver IC or discrete stage.
3 (Drain)	Power output	Connected to high-voltage rail (e.g., PFC output or half-bridge mid-point); electrically tied to insulated tab.

Key Features

Feature	Design Value
Worldwide best R_DS(on) × area	Enables highest power density among 650 V silicon MOSFETs-reduces board area by up to 30% vs. legacy devices.
100% avalanche tested	Each unit validated for unclamped inductive switching (UIS), eliminating need for external snubbers in flyback or LLC resonant converters.
High dv/dt capability	15 V/ns rating ensures immunity to false turn-on in noisy high-speed half-bridge environments.
Soft-recovery body diode	Low Q_rr (2.4 µC) and controlled I_RRM (19.5 A) minimize reverse recovery loss and EMI in synchronous rectification.

Applications

Server PSU Primary Switch

PFC Boost Switch

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with universal AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in LLC resonant half-bridge; handles 11 A RMS current at 400 V DC bus.

Use Value: 0.308 Ω R_DS(on) reduces conduction loss by 22% vs. comparable 650 V MOSFETs, directly improving full-load efficiency by ≥0.4%.

Use Scenario: Active boost PFC stage in telecom rectifiers and industrial UPS systems.

IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode (CCM) at 65–100 kHz with 11 A peak current.

Use Value: Low Q_g (22 nC) and fast t_r/t_f enable clean zero-voltage switching (ZVS) transition, cutting switching loss by 35% versus older MDmesh™ IV parts.

Industrial Motor Drive Inverter

Solar Microinverter Bridge

Use Scenario: 3-phase inverter stage in HVAC compressors and pump drives rated for 1.5–2.2 kW output.

IC Role / Device Role / Timing Role: Low-side switch in 650 V IGBT replacement topology; conducts 11 A continuous with 150 °C junction limit.

Use Value: R_thj-case = 1.47 °C/W allows direct mounting to shared heatsink without derating, simplifying thermal design and reducing BOM cost.

Use Scenario: Full-bridge DC–AC inversion in single-phase solar microinverters with 600 V PV string input.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge; subjected to repetitive unclamped inductive stress during grid synchronization.

Use Value: 160 mJ E_AS rating eliminates need for external avalanche protection, enabling smaller, lighter designs compliant with UL 1741.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M5	Same die, TO-220 package; R_thj-case = 5 °C/W (vs. 1.47 °C/W); no isolation between tab and leads.	Requires insulating washer and larger heatsink; unsuitable for floating-drain configurations.	Select when cost sensitivity outweighs thermal performance and isolation needs.
IPP65R041CFD7	650 V, 0.041 Ω, TO-220FP; CoolMOS™ CFD7 technology; lower R_DS(on) but higher Q_g (45 nC).	Higher gate charge increases driver complexity and switching loss at >150 kHz; superior for ultra-high-efficiency <100 kHz designs.	Prefer for fixed-frequency PFC where conduction loss dominates; avoid in resonant topologies demanding fast switching.

Compared with STP15N65M5, STFI15N65M5 offers 3.4× better thermal resistance and integrated isolation; versus IPP65R041CFD7, it trades 73% higher R_DS(on) for 51% lower Q_g, favoring high-frequency, thermally constrained layouts.

Availability

STFI15N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STFI15N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications where low R_DS(on), rugged avalanche performance, and fast switching are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI15N65M5 supports 6.9 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 022863 Rev 2). This rating reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be applied in conjunction with R_thj-case = 1.47 °C/W to ensure T_j ≤ 150 °C.

Is the I2PAKFP package electrically isolated?

Yes-the I2PAKFP package features an electrically insulated metal tab that is not internally connected to any pin. The tab serves solely as a thermal path to the heatsink and may be safely mounted to a grounded or floating heatsink without short-circuit risk, unlike standard TO-220 variants.

Does this MOSFET require a negative gate turn-off voltage?

No-STFI15N65M5 has a gate threshold voltage (V_GS(th)) of 3–5 V and is fully enhanced at V_GS = 10 V. While a negative turn-off voltage (e.g., –5 V) improves noise immunity in high-dv/dt environments, it is not required for functional operation per datasheet specifications.

How does its body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode exhibits t_rr = 247 ns and Q_rr = 2.4 µC at 25 °C, which is significantly slower and more lossy than SiC Schottky diodes (typically t_rr ≈ 0 ns, Q_rr ≈ 0 nC). For synchronous rectification above 50 kHz, external SiC diodes are recommended to avoid reverse recovery losses.

STFI15N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 816 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI15N65M5 FAQ

1.How can I place an order for STFI15N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI15N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI15N65M5 reliable?

The price and inventory of STFI15N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI15N65M5 is usually 5 days.

3.What payment methods are accepted for STFI15N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI15N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI15N65M5?

STFI15N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI15N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI15N65M5?

For technical support, including STFI15N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI15N65M5 requirements.

6.How does Aetrix verify that STFI15N65M5 is sourced from the original manufacturer or authorized distributors?

All STFI15N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI15N65M5 meets industry standards.

7.What is the process for return or replacement of STFI15N65M5?

All STFI15N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STFI15N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI15N65M5 part is unused and in its original packaging.

Return procedure for STFI15N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…