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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI15NM65N

Name: STFI15NM65N
Brand: STMicroelectronics
SKU: STFI15NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI15NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI15NM65N.pdf

Description:: MOSFET N-CH 650V 12A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:347

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Product details

Overview

STFI15NM65N from STMicroelectronics is an N-channel 650 V, 0.35 Ω typ. (at V_GS = 10 V, I_D = 6 A), 12 A MDmesh™ II Power MOSFET in I²PAKFP (TO-281) package, designed for high-efficiency switching converters in industrial SMPS and PFC stages where low conduction and switching losses are critical.

For engineers reviewing the STFI15NM65N datasheet, STFI15NM65N pinout, STFI15NM65N application, or STFI15NM65N equivalent, key selection criteria include R_DS(on), Q_g (33.3 nC), C_iss (983 pF), avalanche ruggedness (E_AS = 187 mJ), and thermal resistance (R_thjc = 4.17 °C/W).

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize both on-resistance and gate charge simultaneously. Its 650 V V_DS rating and 150 °C max junction temperature support operation in high-voltage, high-temperature industrial power supplies.

The integrated source-drain diode exhibits t_rr = 428 ns (T_j = 25 °C) and Q_rr = 4.7 µC under defined inductive switching conditions, enabling reliable hard-switched and quasi-resonant topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for transients.
R_DS(on) typ.	0.35 Ω at V_GS = 10 V, I_D = 6 A - Enables <1.3 W conduction loss at 12 A continuous drain current (T_c = 25 °C).
Q_g	33.3 nC - Low gate charge reduces driver power requirement and enables efficient operation at 100–300 kHz switching frequencies.
E_AS	187 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive turn-off without failure in PFC or flyback designs.
t_r/t_f	8.5 ns / 11.4 ns - Fast switching transitions minimize overlap loss in hard-switched topologies.
R_thjc	4.17 °C/W - Allows 30 W dissipation at T_c = 25 °C with ≤125 °C junction rise, supporting compact heatsink integration.

Pinout & Package

I²PAKFP (TO-281) package: insulated plastic case with integral heatsink tab; creepage/clearance optimized for 2500 V_RMS isolation; footprint compatible with TO-220FP mounting but lower profile and improved thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Drain	Electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to high-side potential; primary heat transfer path.
2	Source	Power return node for load current; referenced to gate drive ground; carries full switched current including diode reverse recovery charge.
3	Gate	High-impedance control terminal; requires <4.7 Ω series resistance to damp ringing due to low R_g (4.6 Ω) and high C_iss.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against voltage overshoot during inductive turn-off without derating design margins.
Low C_iss and Q_g	983 pF input capacitance and 33.3 nC total gate charge enable stable high-frequency gate driving with standard 1-A drivers.
MDmesh™ II technology	Vertical strip layout achieves 0.35 Ω R_DS(on) at 650 V - 25% lower on-resistance than first-gen MDmesh at same voltage class.
Low gate input resistance	Intrinsic R_g = 4.6 Ω minimizes gate loop damping requirements while maintaining EMI control in fast-switching layouts.

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: 1–3 kW offline AC/DC converters with universal input (85–265 VAC) and regulated 48 V/12 V outputs.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in LLC resonant or hard-switched forward topology.

Use Value: 0.35 Ω R_DS(on) and 33.3 nC Q_g reduce combined conduction + switching loss by ≥18% vs. comparable 600 V MOSFETs at 200 kHz.

Use Scenario: Boost-type active power factor correction stage operating at 65–100 kHz with 400 VDC output.

IC Role / Device Role / Timing Role: Main switching element handling full line-frequency rectified current with peak I_D up to 48 A.

Use Value: 187 mJ E_AS and 428 ns t_rr ensure reliable boost diode commutation without external clamping or snubbers.

Solar Microinverters

Server PSU Primary Switches

Use Scenario: Single-phase 250–350 W microinverter converting PV panel DC to grid-synchronized 230 VAC.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or half-bridge inverter stage with bidirectional current capability via body diode.

Use Value: 1.6 V V_SD and 6.2 µC Q_rr (T_j = 150 °C) limit reverse recovery loss during freewheeling, improving efficiency at light loads.

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server power supply with 54 V intermediate bus and dual-phase interleaved LLC.

IC Role / Device Role / Timing Role: Primary-side switch in each LLC half-bridge leg, operating at 300–500 kHz with zero-voltage switching.

Use Value: 4.17 °C/W R_thjc and 150 °C T_jmax allow sustained 12 A operation with <60 °C case rise using low-profile heatsinks in constrained 1U form factor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM65N	Same die, TO-220FP package; R_thjc = 4.17 °C/W identical, but larger footprint and no insulation rating.	Lacks 2500 V_RMS isolation; unsuitable where creepage/clearance >5 mm required between drain and heatsink.	Select when mechanical space allows TO-220FP and isolation is managed externally.
IPP65R190CFD7	650 V, 0.19 Ω, 14.5 A, CoolMOS™ CFD7; lower R_DS(on) but higher Q_g (42 nC) and C_iss (1250 pF).	Better conduction loss at high current, but increased gate drive loss and slower switching in high-frequency designs.	Select when conduction loss dominates and switching frequency ≤100 kHz; verify E_AS (120 mJ) suffices for application stress.

Compared with STP15NM65N, STFI15NM65N offers identical electrical performance with certified isolation and compact I²PAKFP mounting; versus IPP65R190CFD7, it trades higher R_DS(on) for lower Q_g, faster switching, and proven avalanche ruggedness in high-dV/dt environments.

Availability

STFI15NM65N is available at Aetrix Electronics and suitable for industrial SMPS, active PFC front-ends, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STFI15NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current for STFI15NM65N at 100 °C case temperature?

The maximum continuous drain current is 7.56 A at T_c = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal limitation-not SOA-so operation above this current requires forced cooling or derating based on actual R_thjc and ambient conditions.

Does STFI15NM65N have built-in gate protection?

No integrated gate protection is present. The device specifies ±25 V absolute maximum V_GS, and gate oxide reliability depends on external clamping (e.g., Zener diode from gate to source) to prevent overvoltage during switching transients or layout-induced coupling.

Can STFI15NM65N replace STP15NM65N in existing designs?

Yes, electrically identical and pin-compatible in gate-source-drain function, but STFI15NM65N uses I²PAKFP with insulated tab and 2500 V_RMS isolation-requiring verification of heatsink mounting clearance and PCB cutouts per Figure 19 and Table 10 mechanical data.

What is the typical reverse recovery charge of the body diode at 150 °C?

The typical reverse recovery charge (Q_rr) is 6.2 µC at T_j = 150 °C, ISD = 12 A, di/dt = 100 A/µs, and VDD = 60 V, as measured per Figure 14 test circuit and reported in Table 8 of the datasheet.

STFI15NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.3 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 983 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI15NM65N FAQ

1.How can I place an order for STFI15NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI15NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI15NM65N reliable?

The price and inventory of STFI15NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI15NM65N is usually 5 days.

3.What payment methods are accepted for STFI15NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI15NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI15NM65N?

STFI15NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI15NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI15NM65N?

For technical support, including STFI15NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI15NM65N requirements.

6.How does Aetrix verify that STFI15NM65N is sourced from the original manufacturer or authorized distributors?

All STFI15NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI15NM65N meets industry standards.

7.What is the process for return or replacement of STFI15NM65N?

All STFI15NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STFI15NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI15NM65N part is unused and in its original packaging.

Return procedure for STFI15NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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