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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI20N65M5

Name: STFI20N65M5
Brand: STMicroelectronics
SKU: STFI20N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI20N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI20N65M5.pdf

Description:: MOSFET N CH 650V 18A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:1,453

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Product details

Overview

STFI20N65M5 from STMicroelectronics is an N-channel 650 V, 18 A Power MOSFET in I²PAKFP (TO-281) package, featuring 0.160 Ω typ. R_DS(on), 36 nC total gate charge, and 100% avalanche tested. It leverages MDmesh™ M5 vertical process technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STFI20N65M5 datasheet, STFI20N65M5 pinout, STFI20N65M5 application, or STFI20N65M5 equivalent, key selection criteria include its 650 V V_(BR)DSS, low 3.7 pF Crss, 288 ns trr at 150 °C, and TO-281 thermal resistance of 2.6 °C/W - critical for high-power density designs with constrained heatsinking.

Technical Context

This MOSFET integrates a fast-recovery body diode (trr = 288 ns @ Tj = 25 °C; 342 ns @ 150 °C) and exhibits low output capacitance energy (Co(er) = 35 pF), enabling reduced switching losses in hard-switched converters. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures robust turn-on with standard 10 V gate drivers.

The device operates across –55 to 150 °C junction temperature range and supports unclamped inductive switching up to 4 A repetitive avalanche current. With R_thj-case = 2.6 °C/W (I²PAKFP), it delivers higher power dissipation capability than TO-220FP variants under identical thermal conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin for transients.
R_DS(on) typ.	0.160 Ω - Enables <1.3 W conduction loss at 9 A continuous drain current, reducing heatsink requirements.
Q_g	36 nC - Compatible with standard gate drivers (e.g., IR2110, UCC27531) without excessive drive power demand.
C_rss	3.7 pF - Minimizes Miller-induced shoot-through risk and improves dv/dt immunity in high-side configurations.
trr	288 ns (Tj = 25 °C) - Limits reverse recovery loss in bridge-leg operation; validated for 100 A/µs di/dt stress.
R_thj-case	2.6 °C/W - Supports 48 W continuous power dissipation with modest heatsinking, exceeding TO-220FP's 4.17 °C/W.

Pinout & Package

I²PAKFP (TO-281) package: insulated case, single in-line lead frame with isolated drain tab; footprint compatible with TO-220 but improved thermal performance via direct-drain thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires ≤±25 V rating and low-inductance PCB routing to suppress ringing.
2 (D)	Drain	High-voltage power terminal; electrically isolated metal tab serves as primary thermal interface to heatsink.
3 (S)	Source	Power return node; referenced to driver ground; forms common node for source sensing and current monitoring.

Key Features

Feature	Design Value
MDmesh™ M5 process	Reduces specific on-resistance by ~30% vs. prior-generation 650 V MOSFETs, enabling smaller die size without sacrificing ruggedness.
100% avalanche tested	Guarantees single-pulse avalanche energy (E_AS) ≥270 mJ, supporting reliable operation during transient overvoltage events.
Low Q_gd/Q_gs ratio	Q_gd = 18 nC, Q_gs = 7.5 nC - Delivers sharp Miller plateau transition and predictable turn-off timing in ZVS/ZCS topologies.
Enhanced diode softness	IRRM = 27 A, Q_rr = 4 µC - Reduces EMI generation and voltage overshoot during commutation versus standard fast-recovery diodes.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 750 W BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400 V DC bus and 18 A peak phase current.

Use Value: 0.160 Ω R_DS(on) and 2.6 °C/W R_thj-case enable >97% efficiency at full load with passive heatsinking.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U server power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz with synchronous rectification support.

Use Value: Low Crss (3.7 pF) and fast trr (288 ns) minimize dead-time losses and improve ZVS boundary extension.

Telecom Rectifier Modules

EV Onboard Charger PFC Stage

Use Scenario: Boost PFC switch in 3 kW telecom rectifier operating at 65 kHz with universal AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) boost switch.

Use Value: Avalanche ruggedness (E_AS = 270 mJ) withstands line surges and inductor saturation faults without failure.

Use Scenario: Interleaved boost PFC switch in 6.6 kW OBC with dual-phase topology and 100 kHz switching.

IC Role / Device Role / Timing Role: High-voltage, high-current switching node managing 400–800 V DC link.

Use Value: 650 V V_(BR)DSS and 18 A ID rating support 800 V nominal bus with 20% safety margin and thermal headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 0.041 Ω R_DS(on), 71 nC Q_g, TO-247 package	Higher conduction efficiency but larger footprint and slower switching; requires stronger gate drive.	Prefer when lowest R_DS(on) dominates over switching loss and board space is unconstrained.
STW20N65M5	Same die, TO-3PF package, R_thj-case = 2.6 °C/W, 48 W P_TOT	Identical electrical specs but higher thermal mass and different mounting; suited for high-reliability industrial enclosures.	Select when mechanical robustness, higher power derating, or legacy TO-3PF compatibility is required.

Compared with IPW65R041CFD7, STFI20N65M5 trades 2.5× higher R_DS(on) for 49% lower Q_g and TO-281 mountability; versus STW20N65M5, it offers identical die performance in a smaller, surface-mount-compatible package with identical thermal resistance but lower absolute power rating.

Availability

STFI20N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, server PSUs, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STFI20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STFI20N65M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and motor control applications where low R_DS(on) and fast switching are essential.

FAQ

Is STFI20N65M5 pin-compatible with STF20N65M5?

No. STFI20N65M5 uses the I²PAKFP (TO-281) package with isolated drain tab and 3-pin single-in-line configuration, while STF20N65M5 uses TO-220FP with non-isolated metal tab and different mechanical footprint. PCB layout and heatsink mounting are not interchangeable.

What is the maximum recommended gate resistor for reliable switching?

A gate resistor of 4.7 Ω is validated in the datasheet for 400 V, 12 A inductive switching (td(V) = 43 ns). For 100–300 kHz operation, 5–10 Ω balances switching speed and gate oscillation suppression; values below 3 Ω risk ringing and overshoot without active gate clamping.

Does STFI20N65M5 require a negative gate turn-off voltage?

No. The device specifies ±25 V gate-source voltage rating and operates reliably with 0 V to +10 V or +12 V gate drive. Negative turn-off (e.g., –5 V) is not required but may improve noise immunity in high-dv/dt environments; it does not affect R_DS(on) or avalanche rating.

Can STFI20N65M5 replace older STP20NM60FD in existing designs?

Only after validation. STFI20N65M5 has higher V_(BR)DSS (650 V vs. 600 V), lower R_DS(on) (0.160 Ω vs. 0.22 Ω), and faster trr (288 ns vs. 450 ns), but differs in package (I²PAKFP vs. TO-220FP), thermal resistance (2.6 vs. 4.17 °C/W), and gate charge (36 vs. 42 nC); layout and thermal design must be rechecked.

STFI20N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1345 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI20N65M5 FAQ

1.How can I place an order for STFI20N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI20N65M5 reliable?

The price and inventory of STFI20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI20N65M5 is usually 5 days.

3.What payment methods are accepted for STFI20N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI20N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI20N65M5?

STFI20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI20N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI20N65M5?

For technical support, including STFI20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI20N65M5 requirements.

6.How does Aetrix verify that STFI20N65M5 is sourced from the original manufacturer or authorized distributors?

All STFI20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI20N65M5 meets industry standards.

7.What is the process for return or replacement of STFI20N65M5?

All STFI20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STFI20N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI20N65M5 part is unused and in its original packaging.

Return procedure for STFI20N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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