STMicroelectronics STFI24N60M2

Overview

STFI24N60M2 from STMicroelectronics is an N-channel 600 V, 168 mΩ (typ.), 18 A MDmesh™ M2 Power MOSFET in TO-220FP package, featuring extremely low gate charge (29 nC), optimized C_oss profile (55 pF), and 100% avalanche tested ruggedness. It serves as a high-efficiency primary-side switch in resonant and LCC DC-DC converters for industrial SMPS and telecom power supplies.

For engineers reviewing the STFI24N60M2 datasheet, STFI24N60M2 pinout, STFI24N60M2 application, or STFI24N60M2 equivalent, key selection criteria include R_DS(on) at 10 V, E_AS (180 mJ), dv/dt ruggedness (50 V/ns), and Zener-protected gate reliability under fast switching stress.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching performance. Its low C_oss (55 pF) and C_oss,eq (258 pF) enable efficient zero-voltage switching (ZVS) in resonant topologies, while its 150 °C max junction temperature and 4.2 °C/W R_thj-case support high-power density thermal design.

The integrated Zener-protected gate withstands ±25 V V_GS, and its 100% unclamped inductive switching (UIS) test ensures robustness in hard-switched applications. The source-drain diode exhibits low V_SD (1.6 V @ 18 A) and controlled Q_rr (4–5.5 µC), reducing turn-off losses in synchronous or quasi-resonant configurations.

Key Specifications

Pinout & Package

STFI24N60M2 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The plastic body provides creepage/clearance compliance for 2.5 kV RMS insulation rating between leads and heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF24N60M2, STFI24N60M2 offers mechanical insulation without sacrificing electrical specs, simplifying thermal design; versus IPW60R099P7XKSA1, it trades 11% lower R_DS(on) for 32% lower Q_g and TO-220FP compactness - favoring high-frequency, space-constrained industrial SMPS.

Availability

STFI24N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, LCC resonant converters, and UPS inverters requiring stable component supply, long-lifecycle assurance, and qualified sourcing for production ramp.

Supply support for STFI24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

STFI24N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low gate charge and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI24N60M2 supports 12 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9402 Rev 7. This rating reflects thermal derating due to junction-to-case thermal resistance (4.2 °C/W) and maximum allowable T_j of 150 °C. Operation above this current requires active cooling or pulse-width limitation per SOA curves.

Does STFI24N60M2 have an integrated body diode, and what are its recovery characteristics?

Yes, STFI24N60M2 includes a monolithic source-drain body diode rated for 18 A continuous and 72 A pulsed current. Its reverse recovery time is 332 ns (T_j = 25 °C) and 450 ns (T_j = 150 °C), with Q_rr of 4 µC and 5.5 µC respectively - values measured at I_SD = 18 A, di/dt = 100 A/µs, and V_DD = 60 V per Figure 15 test circuit.

Can STFI24N60M2 replace STF24N60M2 in existing PCB layouts?

Yes - STFI24N60M2 shares identical pinout (G-D-S), footprint, and electrical specifications with STF24N60M2, differing only in the insulated TO-220FP package that eliminates need for external insulating hardware. No layout change is required; however, thermal interface material selection should account for the plastic tab's lower thermal conductivity versus bare metal.

What is the safe operating area (SOA) limitation at 10 µs pulse width and 150 °C junction temperature?

At 10 µs pulse width and T_j = 150 °C, the SOA limits STFI24N60M2 to approximately 10 A at 400 V V_DS, as shown in Figure 1 of DS9402 Rev 7. This boundary is defined by R_DS(on) conduction limit, not avalanche or thermal runaway - confirming suitability for short-circuit tolerant designs in UPS and motor drives.