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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI26N60M2

Name: STFI26N60M2
Brand: STMicroelectronics
SKU: STFI26N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI26N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI26N60M2.pdf

Description:: MOSFET N-CH 600V 20A I2PAKFP

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Inventory:1,494

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Product details

Overview

STFI26N60M2 from STMicroelectronics is an N-channel 600 V, 140 mΩ typ., 20 A MDmesh™ M2 Power MOSFET in TO-220FP package, optimized for high-efficiency resonant and LCC converters. It delivers 34 nC total gate charge, 88 pF output capacitance, and 100% avalanche-tested ruggedness up to 250 mJ single-pulse energy.

For engineers reviewing the STFI26N60M2 datasheet, STFI26N60M2 pinout, STFI26N60M2 application, or STFI26N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, Zener-protected gate, 2.5 kV insulation withstand voltage, and low Coss profile enabling soft-switching in high-frequency topologies.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining robust avalanche capability. Its 124 pF equivalent output capacitance (C_oss,eq) across 0–480 V enables predictable energy storage in resonant tank circuits.

The integrated Zener-protected gate ensures ±25 V V_GS tolerance and stable threshold behavior over temperature (V_GS(th) = 2–4 V), while its 4.2 °C/W R_thJC supports high-power operation with external heatsinking in compact TO-220FP form factor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in hard-switched applications and full 600 V in resonant topologies with margin.
R_DS(on) max	165 mΩ at V_GS = 10 V, I_D = 10 A - Enables low conduction loss in 20 A continuous switching applications at TC = 25 °C.
Q_g	34 nC - Reduces gate drive power and enables fast, efficient switching at >100 kHz in LLC converters.
C_oss	88 pF at V_DS = 100 V - Low stored energy (E_OSS ≈ 2.5 µJ at 400 V) minimizes turn-on loss in ZVS designs.
E_AS	250 mJ - Confirmed single-pulse avalanche energy allows reliable unclamped inductive switching without snubbers.
V_ISO	2.5 kV RMS - Provides reinforced insulation between drain/heat sink and source/gate terminals for safety-critical AC-DC systems.

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole format with integral heatsink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Zener-protected terminal accepting ±25 V drive; 4 Ω intrinsic gate resistance enables stable Miller-effect immunity.
D (Pin 2)	High-side drain connection	Internally connected to metal tab; rated for 2.5 kV isolation from heatsink-supports direct mounting without insulator pad in Class II designs.
S (Pin 3)	Source reference node	Low-inductance return path for 20 A continuous current; defines local ground for gate drive loop in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized trade-off between R_DS(on) and C_oss yields 30% lower figure-of-merit vs. prior-generation 600 V MOSFETs.
100% avalanche tested	Every unit validated for 250 mJ E_AS at T_J = 150 °C-eliminates need for external avalanche protection in PFC and SMPS stages.
Extremely low Q_g/Q_gd ratio	Q_gd/Q_g = 48% - Improves controllability during Miller plateau and reduces risk of spurious turn-on in high-dv/dt environments.
Optimized C_oss profile	C_oss,eq = 124 pF (0–480 V) - Enables precise zero-voltage switching timing in LLC resonant controllers with minimal dead-time sensitivity.

Applications

Server PSU Primary Switch

Industrial LLC Resonant Converter

Use Scenario: High-density 3 kW server power supply operating at 300–400 kHz with digital PWM control.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge LLC topology, handling 20 A peak drain current.

Use Value: Low C_oss and 50 V/ns dv/dt ruggedness ensure reliable ZVS across full load range and prevent false triggering during transient line surges.

Use Scenario: 1.5 kW industrial motor drive auxiliary power supply with wide input (300–800 VDC) and strict EMI requirements.

IC Role / Device Role / Timing Role: Resonant tank switch synchronized to variable-frequency controller; operates in soft-switching region above 150 kHz.

Use Value: 124 pF C_oss,eq enables predictable resonant frequency shift and stable regulation without adaptive dead-time compensation.

Telecom Rectifier Module

EV Charger Onboard PFC Stage

Use Scenario: -48 V telecom rectifier with active clamp forward topology and 96% efficiency target.

IC Role / Device Role / Timing Role: Main switch clamped by active ZVS circuit; subjected to repetitive 600 V blocking and 20 A conduction.

Use Value: 250 mJ E_AS rating eliminates need for external clamping diodes, reducing component count and board area in space-constrained modules.

Use Scenario: 6.6 kW OBC with two-phase interleaved boost PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: Boost switch handling 13 A continuous current at 100 °C case temperature; exposed to 600 V DC link.

Use Value: R_thJC = 4.2 °C/W and 165 mΩ R_DS(on) enable thermal design with passive heatsinking only-no forced air required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW26N60M2	Same die, TO-247 package; higher R_thJC (0.45 °C/W) but no insulated tab.	Requires external isolation for heatsink mounting; better suited for high-power discrete heatsink assemblies.	Select when thermal budget permits larger package and system-level isolation is already implemented.
IPP60R190C7	650 V CoolMOS™ C7; 190 mΩ R_DS(on), 32 nC Q_g, no built-in Zener protection.	Lacks gate Zener and 2.5 kV isolation; requires external gate protection and creepage management.	Choose where gate drive circuitry includes discrete Zener clamping and insulation compliance is handled at board level.

Compared with STW26N60M2 and IPP60R190C7, STFI26N60M2 uniquely combines TO-220FP insulation, Zener gate protection, and MDmesh M2 low-Coss performance-making it optimal for space-constrained, safety-certified AC-DC and isolated DC-DC converters requiring minimal external protection.

Availability

STFI26N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial LLC resonant converters, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for STFI26N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency resonant and soft-switching topologies in 600–650 V applications.

FAQ

Is STFI26N60M2 pin-compatible with STF26N60M2?

Yes-STFI26N60M2 is the insulated-tab variant of STF26N60M2, sharing identical electrical characteristics, pinout (G-D-S), and TO-220FP mechanical outline. The "I" suffix denotes internal insulation (2.5 kV V_ISO), while STF26N60M2 has non-insulated tab. Both use same marking "26N60M2" and share DS10923 datasheet Rev 3.

What is the maximum recommended gate resistor for hard-switching at 100 kHz?

A 10 Ω gate resistor is recommended for hard-switching at 100 kHz, balancing switching speed (td(on)/td(off) ≈ 20/66 ns) against ringing and EMI. Lower values (<5 Ω) increase dv/dt stress; higher values (>22 Ω) raise switching losses beyond 3.4 W at 20 A/100 kHz due to Q_g = 34 nC.

Does STFI26N60M2 require external gate Zener protection?

No-STFI26N60M2 integrates a monolithic Zener diode between gate and source, rated for ±25 V V_GS. This eliminates need for external gate clamping in standard gate driver circuits, provided V_GS drive does not exceed ±25 V and layout minimizes inductive spikes.

Can STFI26N60M2 replace STP26NM60N in existing designs?

Not directly-STP26NM60N is a 600 V, 180 mΩ, 26 A SuperFET II device in TO-220 (non-FP) package with different R_DS(on), Q_g (42 nC), and no insulation. While both handle 20 A, STFI26N60M2 offers lower conduction loss, superior C_oss, and built-in isolation-but requires PCB layout review for heatsink clearance and gate drive tuning.

STFI26N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI26N60M2 FAQ

1.How can I place an order for STFI26N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI26N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI26N60M2 reliable?

The price and inventory of STFI26N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI26N60M2 is usually 5 days.

3.What payment methods are accepted for STFI26N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI26N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI26N60M2?

STFI26N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI26N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI26N60M2?

For technical support, including STFI26N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI26N60M2 requirements.

6.How does Aetrix verify that STFI26N60M2 is sourced from the original manufacturer or authorized distributors?

All STFI26N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI26N60M2 meets industry standards.

7.What is the process for return or replacement of STFI26N60M2?

All STFI26N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFI26N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI26N60M2 part is unused and in its original packaging.

Return procedure for STFI26N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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