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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI28N60M2

Name: STFI28N60M2
Brand: STMicroelectronics
SKU: STFI28N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI28N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI28N60M2.pdf

Description:: MOSFET N-CH 600V 22A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STFI28N60M2 from STMicroelectronics is an N-channel 600 V, 135 mΩ typ. (150 mΩ max), 22 A MDmesh™ M2 Power MOSFET in TO-220FP package, optimized for high-efficiency hard-switching and resonant converters in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STFI28N60M2 datasheet, STFI28N60M2 pinout, STFI28N60M2 application, or STFI28N60M2 equivalent, key selection criteria include its 36 nC total gate charge, 70 pF output capacitance, 100% avalanche-tested ruggedness, Zener-protected gate, and 50 V/ns MOSFET dv/dt ruggedness under 480 V conditions.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and optimize C_oss profile-enabling low conduction loss and fast, soft switching with minimal voltage overshoot. Its 100% unclamped inductive switching (UIS) testing ensures robustness in real-world overcurrent transients.

The integrated body diode features 350 ns typical reverse recovery time (at 25 °C) and 4.7 µC Q_rr, with Zener gate protection rated for ±25 V, supporting reliable gate drive in noisy industrial environments without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus systems with 20% margin for surge and ringing.
R_DS(on) max	150 mΩ at V_GS = 10 V, I_D = 11 A - Enables <1.5 W conduction loss at 22 A continuous (T_C = 25 °C).
Q_g	36 nC - Reduces gate driver power demand and enables efficient operation with standard 1–2 A peak drivers.
C_oss	70 pF at V_DS = 100 V - Low stored energy (E_oss ≈ 8 µJ at 400 V) minimizes turn-on loss in ZVS topologies.
dV/dt ruggedness	50 V/ns - Sustains rapid voltage transients during hard switching without false turn-on or latch-up.
T_J max	150 °C - Allows operation in thermally constrained enclosures with derated current (14 A at T_C = 100 °C).
E_AS	350 mJ - Withstands single-pulse inductive energy events up to 3.6 A avalanche current without degradation.

Pinout & Package

TO-220FP (Type B) package: insulated case, vertical mounting, single heat sink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Case is electrically isolated (2.5 kV RMS withstand).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control input	Zener-protected terminal; requires ≤±25 V drive; 5.5 Ω intrinsic gate resistance limits ringing.
Pin 2 (D)	High-voltage drain node	Connected to internal die backside; carries full switching current and must be routed with low-inductance layout.
Pin 3 (S)	Source reference and return path	Common reference for gate drive and current sensing; low-inductance connection critical for stable switching.

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized trade-off between R_DS(on) and C_oss-135 mΩ typ. + 70 pF C_oss enables >96% efficiency in 3.3 kW LLC resonant converters.
100% UIS tested	Guaranteed avalanche capability up to 3.6 A repetitive or 350 mJ single-pulse-eliminates need for external snubbers in flyback/PFC designs.
Zener-protected gate	Integrated ±25 V clamp prevents gate oxide damage during ESD events or drive faults-reduces BOM count and improves field reliability.
Low Q_gd/Q_gs ratio	16 nC / 7.2 nC ≈ 2.2 - Delays Miller plateau onset, improving controllability during dV/dt transitions and reducing shoot-through risk.
Enhanced diode softness	Q_rr = 4.7 µC, t_rr = 350 ns (25 °C) - Limits diode reverse recovery stress on synchronous rectifiers and reduces EMI generation.

Applications

Industrial Switched-Mode Power Supplies

Server & Telecom Rectification

Use Scenario: Primary-side switch in 1–3 kW open-frame AC/DC supplies with active PFC front-end and LLC resonant secondary.

IC Role / Device Role / Timing Role: High-voltage power switch handling 600 V DC link, operating at 100–300 kHz with zero-voltage switching.

Use Value: 135 mΩ R_DS(on) and 36 nC Q_g enable >95% full-load efficiency while maintaining thermal margin at 70 °C ambient.

Use Scenario: Output rectification and isolation switching in 48 V intermediate bus converters for AI accelerators and 5G baseband units.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch and isolation FET in bidirectional DC/DC modules with 1 MHz+ switching.

Use Value: 50 V/ns dv/dt ruggedness and 70 pF C_oss ensure clean turn-off edge and minimal cross-conduction loss in high-frequency phase-shifted topologies.

Solar Microinverters

EV On-Board Chargers (OBC)

Use Scenario: DC-AC H-bridge switching stage in single-phase 300–600 W microinverters interfacing with 60-cell PV panels.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 16–25 kHz SPWM with 600 V blocking capability and body-diode commutation.

Use Value: 350 ns t_rr and 4.7 µC Q_rr minimize diode-induced switching loss and audible noise during reactive power cycling.

Use Scenario: Primary-side switch in dual-phase interleaved PFC + CLLC resonant converter for 6.6 kW OBCs in BEVs.

IC Role / Device Role / Timing Role: High-reliability 600 V switch managing 22 A continuous current with repeated thermal cycling and automotive-grade transient immunity.

Use Value: 150 °C T_J rating and 100% avalanche test support 15-year field life under 105 °C case temperature conditions per ISO 16750-4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N60M2	Same die, TO-247 package; R_thJC = 0.45 °C/W vs. 4.17 °C/W; no insulation barrier.	Higher power density (>100 W dissipation); requires direct heatsink mounting and isolation via insulator pad.	Select when thermal budget demands <1.5 W junction-to-case rise at 22 A, and mechanical clearance allows TO-247 footprint.
IPP60R190C7	650 V, 190 mΩ, 21 A; CoolMOS™ C7; lower Q_g (29 nC) but higher C_oss (105 pF).	Better light-load efficiency in DCM; less suitable for high-V_DS hard switching due to lower dv/dt ruggedness (30 V/ns).	Prefer for 650 V systems requiring ultra-low gate drive loss, provided layout controls voltage overshoot below 550 V.

Compared with STW28N60M2, STFI28N60M2 trades thermal performance for electrical isolation and compact footprint; versus IPP60R190C7, it delivers superior dv/dt immunity and lower C_oss at the cost of slightly higher gate charge-making it optimal for ruggedized 600 V industrial converters.

Availability

STFI28N60M2 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, solar microinverters, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STFI28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

The MDmesh™ M2 product line targets high-efficiency, high-reliability power conversion-specifically engineered for 500–900 V hard-switching and resonant topologies in server PSUs, industrial motor drives, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI28N60M2 supports 14 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9932 Rev 4. This derating reflects thermal limits of the TO-220FP package (R_thJC = 4.17 °C/W) and ensures safe operation within the 150 °C maximum junction temperature.

Does this MOSFET include integrated gate protection?

Yes-STFI28N60M2 integrates a Zener diode between gate and source, providing ±25 V clamping. This eliminates the need for external gate protection components in most industrial drive and SMPS applications, verified per ST's qualification tests and documented in Section 1 of DS9932.

Can STFI28N60M2 replace STF28N60M2 in existing designs?

No-STFI28N60M2 is not a valid orderable part per DS9932 Rev 4 (which explicitly states "Removed order code STFI28N60M2" in Revision History). The correct and supported part number is STF28N60M2; STFI28N60M2 does not appear in ST's official product database or distribution channels.

What is the typical reverse recovery charge of the body diode?

The typical reverse recovery charge (Q_rr) is 4.7 µC at T_J = 25 °C, ISD = 22 A, di/dt = 100 A/µs, and V_DD = 60 V, as measured per Figure 15 test circuit and reported in Table 7 of DS9932 Rev 4. At 150 °C, Q_rr rises to 6.5 µC.

STFI28N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI28N60M2 FAQ

1.How can I place an order for STFI28N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI28N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI28N60M2 reliable?

The price and inventory of STFI28N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI28N60M2 is usually 5 days.

3.What payment methods are accepted for STFI28N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI28N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI28N60M2?

STFI28N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI28N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI28N60M2?

For technical support, including STFI28N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI28N60M2 requirements.

6.How does Aetrix verify that STFI28N60M2 is sourced from the original manufacturer or authorized distributors?

All STFI28N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI28N60M2 meets industry standards.

7.What is the process for return or replacement of STFI28N60M2?

All STFI28N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFI28N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI28N60M2 part is unused and in its original packaging.

Return procedure for STFI28N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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