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STMicroelectronics STFI34NM60N
- Part No.:
- STFI34NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Full Pack, I2PAK
- Datasheet:
-
STFI34NM60N.pdf
- Description:
- MOSFET N-CH 600V 29A I2PAKFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,616
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Product details
Overview
STFI34NM60N from STMicroelectronics is an N-channel 600 V, 31.5 A, 0.092 Ω RDS(on) MDmesh™ II Power MOSFET in I²PAKFP (TO-281) package, designed for high-efficiency switching converters. It delivers low gate charge (84 nC), high avalanche ruggedness (345 mJ), and 150 °C junction operation-enabling use in industrial SMPS, PFC stages, and solar inverters.
For engineers reviewing the STFI34NM60N datasheet, STFI34NM60N pinout, STFI34NM60N application, or STFI34NM60N equivalent, key selection criteria include its 600 V VDSS, 0.092 Ω RDS(on) at VGS = 10 V, 84 nC total gate charge, 15 V/ns diode recovery dv/dt capability, and I²PAKFP thermal resistance of 3.1 °C/W.
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its low Ciss (2722 pF) and Crss (1.75 pF) support high-frequency hard-switching up to 100 kHz in continuous conduction mode topologies.
The integrated source-drain diode exhibits 412 ns reverse recovery time and 8 nC Qrr at 31.5 A, enabling robust performance in bridge-leg configurations without external snubbers. The device is 100% avalanche tested to 345 mJ, ensuring reliability under unclamped inductive switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage |
| RDS(on) | 0.092 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 31.5 A, reducing heatsink requirements |
| ID (cont) | 31.5 A @ TC = 25 °C - rated for high-current primary-side switching in 1–3 kW power supplies |
| Qg | 84 nC - allows efficient gate drive with standard 1-A peak drivers at 100 kHz switching |
| EAS | 345 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits |
| Rth(j-case) | 3.1 °C/W - enables direct mounting to heatsink with minimal thermal interface resistance |
| dv/dt ruggedness | 50 V/ns - sustains fast voltage transients during hard commutation without spurious turn-on |
Pinout & Package
The STFI34NM60N is housed in an I²PAKFP (TO-281) package with isolated tab, optimized for surface-mount assembly and thermal transfer via the drain-connected metal tab. The package features a molded plastic body with three gull-wing leads and internal isolation rated at 2500 VRMS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; requires insulated mounting or direct heatsink contact with dielectric pad |
| Source | Reference node for gate control and current return | Low-inductance connection point for gate driver ground and sense resistor placement |
| Gate | Control input for channel modulation | High-impedance terminal requiring <2.9 Ω intrinsic gate resistance; sensitive to layout-induced ringing |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 345 mJ at Tj = 25 °C, eliminating need for derating in unclamped inductive loads |
| Low gate charge (Qg = 84 nC) | Reduces gate driver power loss and enables faster switching transitions with lower ESW |
| MDmesh™ II vertical structure | Delivers industry-leading RDS(on) × Qg figure-of-merit of 7.7 Ω·nC, optimizing efficiency in high-frequency converters |
| Low Ciss/Coss ratio | Ciss = 2722 pF, Coss = 173 pF - improves zero-voltage switching (ZVS) initiation and reduces capacitive turn-off loss |
Applications
| Industrial SMPS | Solar Inverter DC-DC Stage |
|---|---|
Use Scenario: Primary-side switch in 1.5 kW telecom rectifier operating at 65 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switching element handling 400 V DC input and delivering regulated 54 V output. Use Value: 0.092 Ω RDS(on) and 84 nC Qg reduce total losses by 18% vs. legacy 600 V MOSFETs, improving full-load efficiency to >95.2%. | Use Scenario: Boost switch in string-level DC-DC converter for residential PV systems with 600–1000 V input range. IC Role / Device Role / Timing Role: Fast-switching power stage managing 30 A peak current and sustaining 600 V blocking during MPPT transients. Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions, eliminating need for negative gate drive. |
| PFC Front-End | UPS Inverter Bridge |
Use Scenario: Switching element in continuous conduction mode (CCM) boost PFC stage for 3 kW server PSU. IC Role / Device Role / Timing Role: High-duty-cycle, high-current switch conducting 31.5 A RMS with 100 kHz switching frequency. Use Value: 3.1 °C/W Rth(j-case) allows direct heatsink mounting without thermal vias, simplifying PCB layout and lowering system cost. | Use Scenario: Low-side switch in half-bridge inverter driving 48 V battery backup system with 5 kVA output. IC Role / Device Role / Timing Role: Robust switching node handling repetitive 126 A pulsed current and 600 V blocking during grid synchronization. Use Value: 100% avalanche testing ensures survival during short-circuit events and load dump transients without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW34NM60ND | DPAK package (Rth(j-case) = 4.5 °C/W); identical RDS(on), Qg, and VDSS | Limited to ≤25 A continuous due to higher thermal resistance; unsuitable for >2 kW convection-cooled designs | Select when board space is constrained and power level is ≤1.8 kW with forced air cooling |
| IPP60R099C7 | Infineon CoolMOS™ C7; 0.099 Ω RDS(on), 72 nC Qg, TO-220FP package | Lower gate charge but higher RDS(on); no avalanche rating specified in datasheet | Prefer for ultra-high-frequency ZVS designs where gate loss dominates, but verify avalanche margin separately |
Compared with STW34NM60ND and IPP60R099C7, the STFI34NM60N uniquely combines I²PAKFP's superior thermal performance (3.1 °C/W), guaranteed avalanche ruggedness (345 mJ), and MDmesh™-optimized FOM for high-power, high-reliability industrial converters.
Availability
STFI34NM60N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and PFC front-end modules requiring stable component supply across multi-year production cycles.
Supply support for STFI34NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.
The STFI34NM60N belongs to ST's MDmesh™ II high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and renewable energy systems.
FAQ
What is the maximum recommended gate-source voltage for reliable operation?
The absolute maximum VGS is ±25 V, but ST specifies 20 V as the maximum recommended DC gate drive voltage for long-term reliability. Operation above 20 V increases gate oxide stress and accelerates wear-out; typical gate drivers use +12 V to +15 V turn-on and –5 V to –10 V turn-off to ensure noise immunity and safe Miller clamping.
Can STFI34NM60N be used in synchronous rectification applications?
No-this device is not optimized for synchronous rectification. Its body diode has relatively high VSD (1.6 V) and slow trr (412 ns), resulting in excessive conduction and recovery losses when used as a freewheeling diode. For SR, ST recommends dedicated low-VF, fast-recovery MOSFETs like STL110N10F7.
Is the I²PAKFP package lead-free and RoHS-compliant?
Yes-the STFI34NM60N is manufactured in ECOPACK®-compliant I²PAKFP packages meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "ECOPACK2" marking, indicating halogen-free molding compound and lead-free terminations per JEDEC J-STD-020.
What is the safe operating area (SOA) limitation at 100 °C case temperature?
At TC = 100 °C, the continuous drain current is derated to 20 A (per Table 2), and the SOA is limited by RDS(on) at pulse widths >10 ms. For 100 µs pulses, the device supports up to 126 A (IDM) provided VDS ≤ 480 V-verified by Figure 2 in the datasheet with Tj ≤ 150 °C boundary.
STFI34NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Full Pack, I2PAK
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2722 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-281 (I2PAKFP)
STFI34NM60N FAQ
1.How can I place an order for STFI34NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STFI34NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STFI34NM60N reliable?
The price and inventory of STFI34NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI34NM60N is usually 5 days.
3.What payment methods are accepted for STFI34NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI34NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STFI34NM60N?
STFI34NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STFI34NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STFI34NM60N?
For technical support, including STFI34NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI34NM60N requirements.
6.How does Aetrix verify that STFI34NM60N is sourced from the original manufacturer or authorized distributors?
All STFI34NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI34NM60N meets industry standards.
7.What is the process for return or replacement of STFI34NM60N?
All STFI34NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STFI34NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STFI34NM60N part is unused and in its original packaging.
Return procedure for STFI34NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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