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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI40N60M2

Name: STFI40N60M2
Brand: STMicroelectronics
SKU: STFI40N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI40N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI40N60M2.pdf

Description:: MOSFET N-CH 600V 34A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:168

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Product details

Overview

STFI40N60M2 from STMicroelectronics is an N-channel 600 V, 78 mΩ typ. (88 mΩ max.), 34 A MDmesh™ M2 Power MOSFET in TO-220FP package, optimized for high-efficiency switching converters in industrial SMPS and PFC stages. It features 100% avalanche tested ruggedness, Zener-protected gate, and low Coss (117 pF) with excellent dv/dt immunity (50 V/ns).

For engineers reviewing the STFI40N60M2 datasheet, STFI40N60M2 pinout, STFI40N60M2 application, or STFI40N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, gate charge (57 nC), safe operating area at TC = 100 °C (22 A), and insulation withstand voltage (2.5 kV RMS) for isolated power stage design.

Technical Context

This device implements ST's MDmesh M2 vertical superjunction architecture with strip layout, delivering low conduction loss and fast, soft-recovery body diode performance (trr = 440 ns, Qrr = 8.2 µC). Its 57 nC total gate charge and 25.5 nC Qgd enable efficient hard-switching up to 100 kHz in continuous conduction mode PFC.

The MOSFET supports unclamped inductive switching with 500 mJ single-pulse avalanche energy and operates reliably across TJ = –55 to 150 °C. Its 3.13 °C/W RthJC and 62.5 °C/W RthJA thermal resistances are validated for TO-220FP mounting on standard heatsinks without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing.
R_DS(on) max	88 mΩ at V_GS = 10 V, I_D = 17 A - Enables <1.5 W conduction loss at 34 A full-load in TO-220FP package.
I_D cont @ T_C = 100 °C	22 A - Defines usable current limit in thermally constrained industrial enclosures without active cooling.
Q_g	57 nC - Determines gate driver power requirement (~1.1 mW per MHz at 10 V swing) for 65–100 kHz operation.
C_oss	117 pF - Low output capacitance reduces turn-off energy loss and improves light-load efficiency in resonant topologies.
E_AS	500 mJ - Confirmed avalanche robustness allows reliable operation under transient overvoltage or short-circuit conditions.
V_ISO	2.5 kV RMS - Meets reinforced insulation requirements for primary-side switching in Class I AC/DC adapters and industrial PSUs.

Pinout & Package

STFI40N60M2 is housed in a TO-220FP (Full Pack) package with insulated tab, enabling direct mounting to heatsink without isolation hardware. The plastic body provides creepage/clearance compliance for 2.5 kV RMS insulation rating.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring ≤±25 V drive; 4.4 Ω intrinsic gate resistance limits ringing during fast switching.
2 (D)	Drain	Main high-voltage power terminal connected to DC bus; electrically tied to insulated metal tab for thermal path only.
3 (S)	Source	Power return and gate reference node; connects to low-side shunt or controller ground with minimal loop inductance.

Key Features

Feature	Design Value
MDmesh M2 superjunction structure	Reduces R_DS(on) × A by 30 % vs. prior generation, enabling smaller heatsinks in 1–3 kW SMPS.
Zener-protected gate	Integrated gate oxide protection clamps transients to ±25 V, eliminating need for external TVS in most board-level ESD environments.
Optimized C_oss profile	117 pF output capacitance with low C_osseq (342 pF) ensures predictable turn-off timing and reduced capacitive losses in LLC resonant converters.
100 % avalanche tested	Every unit validated for 6 A repetitive avalanche current and 500 mJ single-pulse energy-critical for UPS and motor drive fault tolerance.
Soft-recovery body diode	trr = 440 ns and Qrr = 8.2 µC minimize commutation losses and EMI in bridge-leg configurations without external freewheeling diodes.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1.5 kW open-frame AC/DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage power switch in boost PFC and half-bridge LLC primary, operating at 65–100 kHz with zero-voltage switching.

Use Value: 78 mΩ R_DS(on) and 57 nC Q_g reduce conduction and switching losses simultaneously, achieving >96 % system efficiency at full load.

Use Scenario: Hot-swap OR-ing FET and 48 V intermediate bus converter in redundant telecom rectifier modules.

IC Role / Device Role / Timing Role: Synchronous rectifier and isolation switch handling bidirectional current up to 34 A with fast turn-on/off control.

Use Value: 2.5 kV RMS insulation and 50 V/ns dv/dt ruggedness prevent false triggering during bus transients in distributed power architectures.

Uninterruptible Power Supplies

Solar Inverters (String-Level)

Use Scenario: Bidirectional DC link switch in double-conversion UPS inverters supporting battery backup and grid synchronization.

IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge inverter leg, subjected to frequent short-circuit and overload events.

Use Value: 500 mJ E_AS and 136 A pulsed drain current ensure survival during 20 ms overload without derating or external crowbar circuits.

Use Scenario: DC optimizers and string inverters requiring high-voltage isolation and partial shading resilience.

IC Role / Device Role / Timing Role: MPPT-stage switch in buck-boost DC/DC converter interfacing PV strings (up to 1000 V) to microinverter input.

Use Value: 600 V V_DS rating with 150 °C max junction temperature enables operation in desert ambient (70 °C) with 30 K thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF40N60M2	Identical die, same R_DS(on), Q_g, and avalanche rating; differs only in TO-220FP mechanical variant (non-insulated tab).	Requires external insulating pad for heatsink mounting; lower cost where isolation is handled at board level.	Select when thermal interface design permits non-isolated mounting and BOM cost is prioritized over assembly simplicity.
IPP60R099C7	Infineon CoolMOS™ C7: 99 mΩ R_DS(on), 49 nC Q_g, 650 V rating; higher V_DS but 12 % higher conduction loss.	Better light-load efficiency due to lower Q_g, but requires gate driver capable of 12 V min. for full enhancement.	Prefer for variable-frequency resonant converters where switching loss dominates; avoid in fixed-frequency PFC with high average current.

Compared with STF40N60M2, STFI40N60M2 offers integrated insulation for simplified thermal management, while IPP60R099C7 trades higher conduction loss for lower gate drive demand-making STFI40N60M2 optimal for space-constrained, safety-certified industrial power supplies.

Availability

STFI40N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, uninterruptible power supplies, and solar string inverters requiring stable component supply, long-lifecycle support, and certified insulation integrity.

Supply support for STFI40N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STFI40N60M2 belongs to the MDmesh™ M2 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial and telecom infrastructure.

FAQ

Is STFI40N60M2 pin-compatible with STF40N60M2?

Yes-both share identical TO-220FP pinout (G-D-S) and electrical specifications. The sole difference is STFI40N60M2's fully insulated tab, which eliminates the need for a separate insulating washer during heatsink mounting. Mechanical footprint and solder pad layout are identical.

What is the maximum recommended gate resistor for 100 kHz operation?

A 4.7 Ω gate resistor is validated in ST's reference test circuit (Figure 15) for 100 kHz switching with 34 A load and 480 V V_DD. This value balances switching speed (td(on) = 20.5 ns, tf = 11 ns) and gate oscillation damping, given the device's 4.4 Ω intrinsic R_g and 57 nC Q_g.

Does STFI40N60M2 require external gate protection?

No-its integrated Zener clamp protects the gate oxide against ±25 V transients, making external TVS diodes unnecessary in typical board-level ESD environments. However, a 100 nF ceramic capacitor between gate and source is still recommended to suppress high-frequency noise coupling.

Can STFI40N60M2 replace STFW40N60M2 in TO-3PF designs?

No-STFW40N60M2 uses TO-3PF (larger, higher-power package with 2 °C/W R_thJC), while STFI40N60M2 is TO-220FP (3.13 °C/W). Substitution would exceed thermal limits above 22 A continuous current. For equivalent thermal performance, use STF40N60M2 with added insulation instead.

STFI40N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI40N60M2 FAQ

1.How can I place an order for STFI40N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI40N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI40N60M2 reliable?

The price and inventory of STFI40N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI40N60M2 is usually 5 days.

3.What payment methods are accepted for STFI40N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI40N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI40N60M2?

STFI40N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI40N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI40N60M2?

For technical support, including STFI40N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI40N60M2 requirements.

6.How does Aetrix verify that STFI40N60M2 is sourced from the original manufacturer or authorized distributors?

All STFI40N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI40N60M2 meets industry standards.

7.What is the process for return or replacement of STFI40N60M2?

All STFI40N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFI40N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI40N60M2 part is unused and in its original packaging.

Return procedure for STFI40N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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