Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI4N62K3

Name: STFI4N62K3
Brand: STMicroelectronics
SKU: STFI4N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STFI4N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI4N62K3.pdf

Description:: MOSFET N CH 620V 3.8A I2PAKFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,409

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STFI4N62K3 from STMicroelectronics is an N-channel 620 V, 1.7 Ω typ. (2 Ω max), 3.8 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives requiring robust avalanche capability and fast diode recovery.

For engineers reviewing the STFI4N62K3 datasheet, STFI4N62K3 pinout, STFI4N62K3 application, or STFI4N62K3 equivalent, key selection criteria include its 12 V/ns dv/dt rating, 115 mJ single-pulse avalanche energy, 22 nC total gate charge, and Zener-protected gate-critical for reliable operation in hard-switched flyback and resonant converters.

Technical Context

This device implements ST's MDmesh K3 vertical superjunction architecture optimized for low R_DS(on) × Q_g figure-of-merit (3.74 Ω·nC), enabling high-efficiency 65–100 kHz operation in continuous conduction mode (CCM) PFC and 620 V DC-link inverters. Its 7 pF Crss and 27 pF Coss_eq minimize Miller effect and switching losses during high-dv/dt transitions.

The integrated source-drain diode features 220 ns trr at 25 °C and 270 ns at 150 °C with 1.4–1.9 µC Q_rr, delivering improved reverse recovery behavior versus prior MDmesh generations-reducing EMI and body-diode stress in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Supports 400 V AC mains input with ≥20% derating for surge immunity in offline power supplies.
R_DS(on) max	2 Ω @ V_GS = 10 V, I_D = 1.9 A - Enables <1.5 W conduction loss at 3.8 A, suitable for thermally constrained TO-220FP layouts.
Q_g	22 nC - Low gate drive power requirement; compatible with standard 1 A peak gate drivers without external buffering.
E_AS	115 mJ - Withstands unclamped inductive switching events in motor control H-bridges without external snubbers.
dv/dt	12 V/ns - Resists false turn-on during fast voltage transients in high-noise industrial environments.
trr	220 ns @ T_J = 25 °C - Reduces diode commutation loss and ringing in synchronous rectification and LLC resonant topologies.
V_ISO	2.5 kV RMS - Provides reinforced insulation between drain (tab) and external heatsink, meeting IEC 62368-1 creepage requirements.

Pinout & Package

TO-220FP package with isolated tab (drain-connected), 3-pin through-hole outline. Tab is electrically connected to drain and serves as primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30 V bias; Zener-protected against ESD up to 2.5 kV HBM.
2 (D / TAB)	Drain	Main high-side current path; tab is drain-connected and thermally coupled to case (R_thJC = 5 °C/W).
3 (S)	Source	Reference node for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 3.8 A repetitive avalanche at 150 °C junction temperature-ensures field reliability in overvoltage fault conditions.
Extremely high dv/dt capability	12 V/ns rating enables stable operation in high-frequency, high-noise switch-mode topologies without spurious turn-on.
Very low intrinsic capacitance	C_iss = 550 pF, C_oss = 42 pF - Reduces capacitive switching losses and improves efficiency above 65 kHz.
Zener-protected gate	Integrated gate-body Zener clamps transient overvoltage to ±20 V-eliminates need for external gate protection components.
Improved diode reverse recovery	Q_rr = 1.4 µC (25 °C), trr = 220 ns - Low stored charge minimizes shoot-through risk and EMI in half-bridge configurations.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input offline flyback converter operating in DCM/CCM boundary mode.

IC Role / Device Role / Timing Role: High-voltage primary-side switching element handling 620 V DC link and 3.8 A peak drain current.

Use Value: 1.7 Ω R_DS(on) limits conduction loss to <2.5 W at full load; 22 nC Q_g ensures clean 100 kHz switching with minimal driver loss.

Use Scenario: Active boost PFC stage in 300–500 W industrial power supply with 400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 620 V blocking and 3.8 A average inductor current.

Use Value: 12 V/ns dv/dt rating prevents false triggering during line surges; 115 mJ E_AS absorbs inductive kickback during soft-start faults.

Motor Drive Half-Bridge Leg

LED Driver High-Voltage Switch

Use Scenario: 1 kW three-phase inverter leg driving BLDC motor with 600 V DC bus.

IC Role / Device Role / Timing Role: Upper-leg switching device in IGBT-replacement configuration with integrated freewheeling diode.

Use Value: 220 ns trr and low Q_rr reduce cross-conduction losses and voltage spikes during commutation, improving system efficiency by ~1.2%.

Use Scenario: Constant-current LED driver for street lighting with 480 V AC input and 350 V string voltage.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) buck-boost topology operating at variable frequency up to 130 kHz.

Use Value: Low C_oss (42 pF) and C_oss,eq (27 pF) enable zero-voltage switching (ZVS) across wide load range, reducing EMI and thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF4N62K3	Identical electrical specs; same TO-220FP package but non-isolated tab (drain not insulated from mounting surface).	Requires insulating washer for heatsink mounting; unsuitable where reinforced isolation is mandated (e.g., medical, ITE).	Select STFI4N62K3 when 2.5 kV isolation between drain and heatsink is required per safety standards.
STI4N62K3	Same die, but in I²PAK package with R_thJC = 1.79 °C/W (vs. 5 °C/W for TO-220FP); higher ID_cont = 3.8 A at T_C = 100 °C.	Better thermal performance in PCB-mounted applications; larger footprint than TO-220FP.	Choose STI4N62K3 for space-constrained designs needing lower thermal resistance without external heatsink.

Compared with STF4N62K3, STFI4N62K3 adds reinforced insulation for safety-critical systems, while STI4N62K3 trades package size for superior thermal dissipation-enabling higher ambient operation in sealed enclosures.

Availability

STFI4N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, motor drive inverters, and high-voltage LED drivers requiring stable component supply and long-term lifecycle support.

Supply support for STFI4N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to the MDmesh K3 family-engineered specifically for high-efficiency, high-reliability 600 V+ switching applications in industrial power conversion and energy-efficient consumer electronics.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI4N62K3 supports 3.8 A continuous drain current at T_C = 25 °C and maintains 2 A at T_C = 100 °C per absolute maximum ratings table. This derating reflects thermal limitations of the TO-220FP package with R_thJC = 5 °C/W and maximum T_J = 150 °C.

Does STFI4N62K3 require external gate protection?

No. The device integrates a Zener diode between gate and source rated for ±20 V, providing inherent protection against ESD (2.5 kV HBM) and gate overvoltage transients-eliminating need for external TVS or resistors in most designs.

How does the diode reverse recovery performance compare to standard silicon MOSFETs?

With trr = 220 ns and Q_rr = 1.4 µC at 25 °C, STFI4N62K3 delivers significantly faster and lower-charge recovery than legacy planar MOSFETs (typically >500 ns, >3 µC), reducing diode-induced switching loss and voltage overshoot in bridge circuits.

Can STFI4N62K3 be used in place of STF4N62K3 without layout changes?

No. Although electrically identical, STFI4N62K3 uses a TO-220FP type B package with isolated tab, whereas STF4N62K3 uses non-isolated TO-220FP. Mounting requires insulating hardware and verification of creepage/clearance distances per IEC 62368-1.

STFI4N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI4N62K3 FAQ

1.How can I place an order for STFI4N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI4N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI4N62K3 reliable?

The price and inventory of STFI4N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI4N62K3 is usually 5 days.

3.What payment methods are accepted for STFI4N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI4N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI4N62K3?

STFI4N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI4N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI4N62K3?

For technical support, including STFI4N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI4N62K3 requirements.

6.How does Aetrix verify that STFI4N62K3 is sourced from the original manufacturer or authorized distributors?

All STFI4N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI4N62K3 meets industry standards.

7.What is the process for return or replacement of STFI4N62K3?

All STFI4N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STFI4N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI4N62K3 part is unused and in its original packaging.

Return procedure for STFI4N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…