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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI6N62K3

Name: STFI6N62K3
Brand: STMicroelectronics
SKU: STFI6N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI6N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI6N62K3.pdf

Description:: MOSFET N CH 620V 5.5A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:1,500

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Product details

Overview

STFI6N62K3 from STMicroelectronics is an N-channel 620 V, 0.95 Ω (typ.) MDmesh K3 Power MOSFET in IPAK (TO-251) package, rated for 5.5 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It delivers extremely high dv/dt capability (12 V/ns), low output capacitance (C_oss = 100 pF), and improved diode reverse recovery (t_rr = 290 ns at T_J = 25 °C), enabling use in high-frequency hard-switched PFC and SMPS primary-side switching.

For engineers reviewing the STFI6N62K3 datasheet, STFI6N62K3 pinout, STFI6N62K3 application, or STFI6N62K3 equivalent, key selection criteria include its 620 V V_DS, 1.39 °C/W R_thJC, Zener-protected gate, 34 nC total gate charge, and 140 mJ single-pulse avalanche energy - all critical for reliable operation in industrial offline converters and UPS systems.

Technical Context

This device employs ST's optimized vertical MDmesh K3 structure to achieve ultra-low R_DS(on) while maintaining robust 620 V breakdown voltage and superior dynamic performance. Its intrinsic gate resistance (R_G = 3.5 Ω) and low Crss (17 pF) support fast, controllable switching with minimal Miller-induced oscillation.

The integrated source-drain diode features low forward voltage (V_SD = 1.5 V at I_SD = 5.5 A) and tightly controlled reverse recovery (Q_rr = 1.9 µC, I_RRM = 13.5 A), reducing commutation losses in bridge configurations. Avalanche ruggedness is validated per unclamped inductive load test (EAS = 140 mJ at T_J = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Withstands full mains rectified voltage in universal-input 85–265 V_AC offline converters without derating.
R_DS(on) max	1.2 Ω - Ensures <1.5 W conduction loss at 5.5 A, supporting thermally constrained IPAK footprint.
I_D (cont, T_C=25°C)	5.5 A - Sustains peak load currents in 100–300 W SMPS primary switches.
EAS (single pulse)	140 mJ - Enables robust operation under transient overloads and inductive switching faults.
C_oss	100 pF - Minimizes turn-off energy loss and improves efficiency in high-frequency (>100 kHz) topologies.
t_rr	290 ns - Reduces diode recovery-related voltage spikes and EMI in half-bridge and LLC resonant circuits.
dv/dt capability	12 V/ns - Prevents false turn-on during high-slew-rate switching transients in noisy power stages.

Pinout & Package

IPAK (TO-251) package with exposed drain tab for thermal and electrical connection; compact 6.1 × 6.6 × 16.5 mm outline, ECOPACK® compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V drive; Zener-protected against ESD (2.5 kV HBM) and overvoltage.
2 (D / TAB)	Drain / Heat Sink Interface	High-voltage power input; electrically connected to metal tab for low-inductance, low-thermal-resistance mounting.
3 (S)	Source	Power return and reference node for gate drive; forms common-source configuration with low parasitic inductance path.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 140 mJ single-pulse EAS across production lot, eliminating need for external snubbers in inductive fault conditions.
Extremely high dv/dt capability	12 V/ns rating prevents spurious turn-on during fast V_DS transitions in hard-switched topologies like flyback and forward converters.
Very low intrinsic capacitance	C_iss = 875 pF, C_oss = 100 pF, Crss = 17 pF - reduces switching losses and improves gate drive efficiency at >100 kHz frequencies.
Improved diode reverse recovery	t_rr = 290 ns, Q_rr = 1.9 µC - lowers recovery losses and EMI generation in synchronous rectification and bridge-leg commutation.
Zener-protected gate	Integrated gate-source Zener clamps V_GS to ±20 V, allowing direct microcontroller-level drive without external protection components.

Applications

Industrial SMPS Primary Switch

Server/Telecom PFC Stage

Use Scenario: High-efficiency 200–300 W AC-DC power supply operating at 65–130 kHz with universal input (85–265 V_AC).

IC Role / Device Role / Timing Role: Primary-side switching element in discontinuous conduction mode (DCM) or transition mode (TM) PFC boost converter.

Use Value: Low R_DS(on) (0.95 Ω typ.) minimizes conduction loss at full load; 620 V rating ensures margin over 400 V DC bus with surge tolerance.

Use Scenario: Active clamp forward or LLC resonant converter in 1U server power supplies with tight thermal constraints.

IC Role / Device Role / Timing Role: Main switch in high-side position handling 350–400 V DC bus with fast zero-voltage switching (ZVS) transitions.

Use Value: Low C_oss (100 pF) and Crss (17 pF) reduce capacitive turn-off loss and improve ZVS soft-switching window reliability.

UPS Inverter Half-Bridge

Motor Drive HV Input Stage

Use Scenario: 500–1000 VA line-interactive UPS inverter stage converting 360 V DC bus to 230 V_AC sine wave output.

IC Role / Device Role / Timing Role: High-side switch in complementary PWM-driven half-bridge with freewheeling diode conduction during dead time.

Use Value: Optimized body diode (t_rr = 290 ns, Q_rr = 1.9 µC) limits voltage overshoot and shoot-through risk during commutation.

Use Scenario: 3-phase inverter input stage for HVAC compressors or industrial pumps operating from 380–480 V_AC mains.

IC Role / Device Role / Timing Role: DC-link switch in IGBT gate driver auxiliary supply or isolated DC-DC bias rail generation.

Use Value: 100% avalanche rating (EAS = 140 mJ) withstands inductive kickback from transformer-coupled gate drivers under fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N62K3	Same die, TO-220 package; R_thJC = 1.0 °C/W vs. 1.39 °C/W; larger footprint and higher thermal mass.	Better thermal performance in forced-air-cooled designs; unsuitable for space-constrained PCB layouts.	Select when board-level airflow >1 m/s is available and IPAK's compact size is not required.
STU6N62K3	Identical electrical specs and die; IPAK package with same pinout (G-D-S); marking "6N62K3" and tube packaging.	No functional difference; STU6N62K3 is the base orderable part; STFI6N62K3 is a variant with specific traceability or screening.	Preferred for standard production; STFI6N62K3 may be specified for legacy BOM alignment or internal tracking requirements.

Compared with STP6N62K3, STFI6N62K3 trades 0.39 °C/W higher junction-to-case thermal resistance for 40% smaller PCB area and simplified mechanical mounting; versus STU6N62K3, it offers identical performance but distinct logistics coding for inventory control in multi-tier supply chains.

Availability

STFI6N62K3 is available at Aetrix Electronics and suitable for industrial SMPS primary switching, telecom PFC stages, and UPS inverter half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STFI6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh K3 product line targets high-efficiency, high-voltage power conversion - specifically engineered for 600–650 V applications where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

Is STFI6N62K3 pin-compatible with STU6N62K3?

Yes - both share identical IPAK (TO-251) package outline, G-D-S pin assignment (pin 1 = Gate, pin 2 = Drain/TAB, pin 3 = Source), and mechanical dimensions. The devices differ only in ordering code and traceability labeling, not electrical or physical interface.

What is the maximum recommended gate resistor for reliable switching?

A gate resistor of 4.7 Ω is validated in the datasheet for resistive-load switching tests (V_DD = 310 V, I_D = 2.75 A). For hard-switched PFC, 10–22 Ω is typical to balance EMI suppression and switching loss; values above 47 Ω risk incomplete turn-on due to R_G + C_iss time constant.

Does STFI6N62K3 require external gate protection?

No - the device integrates a bidirectional gate-source Zener diode rated for ±20 V clamping, validated for 2.5 kV HBM ESD. External TVS or RC networks are unnecessary unless system-level transients exceed ±30 V or involve repetitive high-energy events beyond datasheet test conditions.

Can STFI6N62K3 replace STF6N62K3 in existing designs?

Yes - STF6N62K3 (TO-220FP) and STFI6N62K3 (IPAK) share identical die characteristics, R_DS(on), V_DS, and dynamic parameters. Replacement requires only mechanical adaptation for the smaller IPAK footprint and verification of thermal margin given R_thJC = 1.39 °C/W vs. 1.0 °C/W for TO-220FP.

STFI6N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 875 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI6N62K3 FAQ

1.How can I place an order for STFI6N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI6N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI6N62K3 reliable?

The price and inventory of STFI6N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI6N62K3 is usually 5 days.

3.What payment methods are accepted for STFI6N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI6N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI6N62K3?

STFI6N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI6N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI6N62K3?

For technical support, including STFI6N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI6N62K3 requirements.

6.How does Aetrix verify that STFI6N62K3 is sourced from the original manufacturer or authorized distributors?

All STFI6N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI6N62K3 meets industry standards.

7.What is the process for return or replacement of STFI6N62K3?

All STFI6N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STFI6N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI6N62K3 part is unused and in its original packaging.

Return procedure for STFI6N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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