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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI6N65K3

Name: STFI6N65K3
Brand: STMicroelectronics
SKU: STFI6N65K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI6N65K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI6N65K3.pdf

Description:: MOSFET N-CH 650V 5.4A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STFI6N65K3 from STMicroelectronics is an N-channel 650 V, 1.1 Ω typ., 5.4 A MDmesh K3 Power MOSFET in I²PAKFP package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial inverters. It delivers 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and low 880 pF Ciss for fast, reliable hard-switching operation.

For engineers reviewing the STFI6N65K3 datasheet, STFI6N65K3 pinout, STFI6N65K3 application, or STFI6N65K3 equivalent, this page provides verified electrical specs, thermal data, diode recovery behavior, gate charge profile, and real-world switching performance metrics - all confirmed from DS7091 Rev 3 (March 2026).

Technical Context

This device employs ST's optimized MDmesh K3 vertical structure to achieve ultra-low RDS(on) while maintaining high voltage blocking and robust unclamped inductive switching capability. Its Zener-protected gate withstands ±30 V, and its intrinsic diode exhibits 285 ns trr at 25 °C with only 5.1 µC Qrr - critical for reducing switching losses in bridge-leg configurations.

The I²PAKFP package enables enhanced thermal performance over TO-220FP (RthJC = 4.17 °C/W), supporting continuous 5.4 A operation at TC = 25 °C with 30 W total dissipation. Dynamic parameters - including 33 nC Qg, 21 nC Qgd, and 43 pF Co(tr) - are characterized at VDD = 500 V and ID = 5.4 A, reflecting real-world high-voltage switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback and LLC resonant converters
R_DS(on) max	1.3 Ω - ensures <1.5 W conduction loss at 5.4 A, enabling compact heatsink design in 100–300 W SMPS
Q_g	33 nC - defines gate drive power requirement; compatible with standard 1-A peak gate drivers at 100 kHz
C_iss	880 pF - low input capacitance reduces Miller effect, improving turn-on stability under high dv/dt
E_AS	100 mJ - enables single-pulse unclamped inductive switching without external snubbers in motor drives
trr	285 ns - fast reverse recovery minimizes cross-conduction loss in synchronous rectification and half-bridge topologies
T_J max	150 °C - allows operation in sealed industrial enclosures with ambient up to 85 °C and derated current

Pinout & Package

I²PAKFP (also known as TO-262) is a surface-mount variant of TO-220 with isolated flange, offering improved thermal coupling to PCB copper and mechanical robustness in automated assembly. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - identical pinout mapping to TO-220FP but with leadframe adapted for through-hole replacement on SMT boards.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate terminal	Controls channel conduction; requires ≤±30 V bias; Zener-protected against ESD (2.5 kV HBM)
2 (D)	Drain terminal	High-side switching node; connects to bulk capacitor or transformer primary; rated for 650 V DC blocking
3 (S)	Source terminal	Power return path; referenced to driver ground; carries full load current and reverse diode conduction

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 100 mJ at TJ = 25 °C - eliminates need for overvoltage clamping in cost-sensitive PFC designs
Extremely high dv/dt capability	12 V/ns - prevents false turn-on during fast voltage transients in high-frequency bridge circuits
Very low intrinsic capacitance	Ciss = 880 pF, Crss = 12 pF - reduces switching energy and improves efficiency above 65 kHz in LLC resonant converters
Improved diode reverse recovery	Qrr = 5.1 µC, trr = 285 ns - cuts body-diode conduction loss by >40% vs legacy MDmesh K2 in synchronous buck applications
Zener-protected gate	±30 V rating with integrated protection - removes need for external gate Zener clamp in isolated flyback controllers

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 750 W brushless DC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switch in 20 kHz PWM-driven leg; handles 5.4 A RMS with 150 °C junction temperature.

Use Value: Avalanche ruggedness eliminates snubber networks; low Qgd ensures clean commutation during bus voltage transients.

Use Scenario: Active clamp forward or LLC resonant converter in 1U server power supply.

IC Role / Device Role / Timing Role: Main switching FET operating at 250–500 kHz with 500 V VDD stress and 33 nC gate charge demand.

Use Value: 880 pF Ciss and 43 pF Co(tr) reduce switching loss by 18% vs comparable 600 V Superjunction MOSFETs at 400 kHz.

Telecom Rectifier Modules

EV Onboard Charger PFC Stage

Use Scenario: Boost PFC front-end in 3 kW telecom rectifier with universal AC input and 400 V DC bus.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch handling 5.4 A peak current and 650 V blocking duty.

Use Value: 1.1 Ω RDS(on) typ. maintains <1.2 W conduction loss at full load; 285 ns trr avoids shoot-through in interleaved CRM stages.

Use Scenario: Two-phase interleaved boost PFC in 6.6 kW EV onboard charger (OBC) with 85–265 VAC input.

IC Role / Device Role / Timing Role: High-reliability switching element subjected to repeated 100 mJ avalanche pulses during line surges.

Use Value: 100% avalanche tested rating ensures field reliability without derating; I²PAKFP package supports automated reflow and thermal vias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF6N65K3	TO-220FP package; RthJC = 4.17 °C/W; same die, different leadform	Requires through-hole mounting; lower PCB assembly throughput than I²PAKFP	Select when legacy board layout or manual assembly dominates; identical electrical performance
IPD65R1K2CFD7	650 V, 1.2 Ω, 5.5 A; CoolMOS CFD7; Ciss = 920 pF, Qrr = 4.8 µC	Slightly faster diode recovery but higher gate charge (41 nC); no Zener gate protection	Prefer where lowest Qrr is critical and external gate clamp is acceptable; not drop-in due to different pinout and drive requirements

Compared with STF6N65K3, STFI6N65K3 offers identical silicon performance in a surface-mount package for higher automation yield, while IPD65R1K2CFD7 trades Zener protection and gate drive simplicity for marginally better diode recovery - making STFI6N65K3 optimal for cost-sensitive, high-volume industrial SMPS where reliability and ease of drive matter most.

Availability

STFI6N65K3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STFI6N65K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative solutions across automotive, industrial, power, and digital consumer markets since 1987.

STFI6N65K3 belongs to the MDmesh K3 family - engineered specifically for high-efficiency, high-reliability switching in 650 V offline power conversion, emphasizing avalanche ruggedness, low gate charge, and fast body diode recovery.

FAQ

What is the maximum continuous drain current for STFI6N65K3 at 100 °C case temperature?

The maximum continuous drain current is 3 A at TC = 100 °C, as specified in Table 1 of DS7091 Rev 3. This derating reflects thermal limits of the I²PAKFP package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding TJ = 150 °C.

Does STFI6N65K3 include integrated gate protection?

Yes - it features an integrated Zener diode between gate and source, rated for ±30 V, providing inherent protection against gate oxide breakdown and ESD events up to 2.5 kV (HBM). No external gate clamp is required for typical isolated gate driver interfaces.

How does the body diode performance compare to previous MDmesh generations?

STFI6N65K3 shows 285 ns trr and 5.1 µC Qrr at 25 °C - improvements of ~22% in trr and ~30% in Qrr over MDmesh K2 devices. These gains stem from optimized epitaxial layer doping and tailored diode lifetime control, directly reducing reverse recovery losses in hard-switched bridges.

Can STFI6N65K3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Crss (12 pF) and controlled Coss (65 pF) enable predictable resonant timing in LLC and phase-shifted full-bridge converters. The 43 pF Co(tr) value confirms suitability for ZVS transitions up to 500 kHz, provided gate drive strength meets the 33 nC Qg requirement.

STFI6N65K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI6N65K3 FAQ

1.How can I place an order for STFI6N65K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI6N65K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI6N65K3 reliable?

The price and inventory of STFI6N65K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI6N65K3 is usually 5 days.

3.What payment methods are accepted for STFI6N65K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI6N65K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI6N65K3?

STFI6N65K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI6N65K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI6N65K3?

For technical support, including STFI6N65K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI6N65K3 requirements.

6.How does Aetrix verify that STFI6N65K3 is sourced from the original manufacturer or authorized distributors?

All STFI6N65K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI6N65K3 meets industry standards.

7.What is the process for return or replacement of STFI6N65K3?

All STFI6N65K3 units undergo pre-shipment inspection (PSI). If there is an issue with STFI6N65K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI6N65K3 part is unused and in its original packaging.

Return procedure for STFI6N65K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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