STMicroelectronics STFI7N80K5

Overview

STFI7N80K5 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. R_DS(on), 6 A continuous drain current MDmesh™ K5 Power MOSFET in I²PAKFP (TO-281) package. It features ultra-low gate charge (13.4 nC), 100% avalanche tested operation, and integrated Zener-protected gate, targeting high-voltage flyback and PFC stages in industrial SMPS.

For engineers reviewing the STFI7N80K5 datasheet, STFI7N80K5 pinout, STFI7N80K5 application, or STFI7N80K5 equivalent, key selection criteria include its 800 V V_DS, 5 °C/W junction-to-case thermal resistance, 4.5 V/ns diode recovery dv/dt rating, and built-in gate-source Zener clamping at ±30 V.

Technical Context

This device employs ST's MDmesh™ K5 vertical superjunction architecture to achieve industry-leading R_DS(on) × area and FoM. Its 0.95 Ω typ. on-resistance at V_GS = 10 V and 3 A, combined with 360 pF C_iss, enables high-frequency switching up to 100 kHz in hard-switched topologies.

The integrated back-to-back gate-source Zener diodes provide ±30 V breakdown protection without external components, while the 25 W total power dissipation and 150 °C max junction temperature support thermally constrained board layouts in enclosed power supplies.

Key Specifications

Pinout & Package

I²PAKFP (TO-281) package: isolated flange, surface-mount compatible footprint with through-hole lead form; flange electrically connected to drain; requires minimum creepage/clearance of 4 mm to adjacent traces per 2500 V_ISO rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW7N80K5, STFI7N80K5 offers lower profile and lower assembly cost in space-constrained designs, while IPP60R099C7 lacks the 800 V rating and avalanche ruggedness needed for robust industrial operation - making STFI7N80K5 the only validated choice for 400 V DC bus and universal AC input PFC/flyback.

Availability

STFI7N80K5 is available at Aetrix Electronics and suitable for industrial flyback converters, active PFC boost stages, LED driver power supplies, and telecom rectifier modules requiring stable component supply and long-term manufacturing continuity.

Supply support for STFI7N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ K5 product line delivers ultra-high-voltage superjunction MOSFETs optimized for efficiency-critical 85–305 V_AC offline power conversion, emphasizing low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

Is STFI7N80K5 pin-compatible with STF7N80K5?

No. STFI7N80K5 uses I²PAKFP (TO-281) package with drain-connected flange and 3-pin inline lead frame, while STF7N80K5 uses TO-220FP with isolated flange and different pin pitch. PCB layout and thermal pad design are not interchangeable; mechanical mounting and creepage requirements differ significantly.

What is the maximum recommended gate resistor value for reliable switching?

For 65 kHz operation with 13.4 nC Q_g, a 10 Ω gate resistor limits peak gate current to <1.5 A and keeps switching times within safe SOA. Values above 22 Ω increase td(off) beyond 30 ns and risk shoot-through in half-bridge configurations; values below 4.7 Ω require gate driver capable of >2 A peak sink/source.

Does STFI7N80K5 require external gate protection?

No. The device integrates back-to-back Zener diodes with ±30 V breakdown voltage (V_(BR)GSO) between gate and source, verified per Table 9. External TVS or clamping diodes are unnecessary unless system-level ESD exceeds IEC 61000-4-2 Level 4 (15 kV air/8 kV contact) - which is uncommon in isolated power supply environments.

Can STFI7N80K5 replace STP7N80 in existing designs?

Only after validation. STP7N80 has 1.4 Ω R_DS(on), no Zener gate protection, and 100% non-avalanche-rated construction. While pinout matches I²PAK, STFI7N80K5's lower R_DS(on), improved dv/dt ruggedness (50 V/ns), and 88 mJ E_AS enable higher efficiency and reliability - but layout changes may be needed to accommodate lower gate drive energy and revised thermal interface.