STMicroelectronics STFI8N80K5

Overview

STF8N80K5 from STMicroelectronics is an N-channel 800 V, 6 A high-voltage Power MOSFET in TO-220FP package, featuring 800 mΩ typ. R_DS(on), 16.5 nC total gate charge, and 100% avalanche tested operation. It employs MDmesh K5 vertical structure for ultra-low FoM and is Zener-protected for robust gate reliability in offline SMPS and industrial motor drives.

For engineers reviewing the STF8N80K5 datasheet, STF8N80K5 pinout, STF8N80K5 application, or STF8N80K5 equivalent, key selection criteria include its 800 V V_DS, 5 °C/W R_thJC, 4.5 V/ns diode recovery dv/dt rating, and 114 mJ single-pulse avalanche energy - critical for flyback, PFC, and hard-switched converters demanding ruggedness and efficiency.

Technical Context

This MOSFET uses ST's MDmesh K5 proprietary vertical superjunction architecture to achieve simultaneous low R_DS(on) and ultra-low Q_g, enabling high power density in compact 65–300 kHz switching topologies. Its integrated Zener-protected gate ensures ±30 V V_GS tolerance and immunity to transient overvoltage during gate drive transients.

The device delivers 2 kV RMS insulation withstand voltage between leads and heat sink, supports 24 A pulsed drain current, and exhibits 300 ns typical reverse recovery time (T_J = 25 °C) with 3 µC Q_rr, making it suitable for fast-recovery inductive load switching without external snubbers.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heat sink tab, 3-pin through-hole mounting, 2.5 mm creepage/clearance, ECOPACK® compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF10N80K5 and FDPF8N80, the STF8N80K5 offers optimal balance of gate protection, avalanche margin, and thermal resistance for mid-power industrial converters where reliability under surge and thermal stress is prioritized over raw current headroom.

Availability

STF8N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, LED streetlight drivers, and PLC power supplies requiring stable component supply across multi-year production cycles.

Supply support for STF8N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-reliability offline power conversion - specifically engineered for 65–300 kHz SMPS, PFC, and motor control where low R_DS(on) × Q_g FoM and rugged avalanche performance are mandatory.

FAQ

Is STF8N80K5 pin-compatible with STF10N80K5?

Yes - both use identical TO-220FP (Type B) package with G-D-S pinout (1-2-3), same mounting hole pattern, and compatible thermal pad layout. Mechanical interchangeability is confirmed per ST's package drawings DS9564 Rev 4 Figure 20 and DM00062075 package data. No PCB redesign is needed for upgrade/downgrade within current rating limits.

What is the maximum recommended gate resistor value for 100 kHz operation?

For 100 kHz switching with 16.5 nC Q_g, a 10 Ω gate resistor provides optimal trade-off: 1.65 V·ns slew rate limits dV/dt-induced noise while keeping turn-on time below 20 ns (per Figure 19). Values above 22 Ω increase switching loss significantly; values below 4.7 Ω risk ringing and overshoot without ferrite bead damping.

Does STF8N80K5 require external gate Zener protection?

No - the device integrates bidirectional Zener clamping between gate and source, rated for ±30 V per absolute maximum ratings (Table 1). External Zener is unnecessary unless system-level transients exceed 30 V peak or require redundancy per functional safety standards (e.g., IEC 61508).

Can STF8N80K5 replace STP8N80 in existing designs?

Yes, with verification: both are 800 V, TO-220FP N-MOSFETs, but STF8N80K5 has 15% lower R_DS(on) (950 mΩ vs 1.1 Ω), 25% lower Q_g (16.5 nC vs 22 nC), and added Zener protection. Thermal and layout compatibility is confirmed; gate drive timing must be rechecked due to faster switching edges.