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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFU10N80K5

Name: STFU10N80K5
Brand: STMicroelectronics
SKU: STFU10N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFU10N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STFU10N80K5.pdf

Description:: MOSFET N-CH 800V 9A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,699

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Product details

Overview

STFU10N80K5 from STMicroelectronics is an N-channel 800 V, 470 mΩ typ. (600 mΩ max), 9 A MDmesh K5 Power MOSFET in TO-220FP ultra narrow leads package, featuring ultra-low gate charge (22 nC), 100% avalanche tested, and Zener-protected gate. It delivers high power density for high-voltage switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STFU10N80K5 datasheet, STFU10N80K5 pinout, STFU10N80K5 application, or STFU10N80K5 equivalent, key selection criteria include its 800 V V_DS, 470 mΩ R_DS(on) at 10 V, 22 nC Q_g, 2.5 kV insulation rating, and rugged dv/dt performance (50 V/ns).

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to minimize conduction and switching losses simultaneously. Its low C_iss (635 pF) and ultra-low Crss (0.8 pF) enable fast, controllable turn-on/turn-off with minimal Miller effect.

The integrated Zener-protected gate withstands ±30 V V_GS, while 100% unclamped inductive avalanche testing (E_AS = 130 mJ at T_J = 25 °C) ensures robustness in hard-switching topologies under transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input 800 V-rated offline converters without derating.
R_DS(on) max	600 mΩ at V_GS = 10 V, I_D = 4.5 A - Enables <1.5 W conduction loss at 9 A continuous drain current (T_C = 25 °C).
Q_g	22 nC - Reduces gate drive power and enables use of smaller, lower-cost gate drivers in high-frequency designs.
E_AS	130 mJ (single-pulse, T_J = 25 °C) - Sustains repetitive energy transients in flyback and resonant LLC primary switches.
V_ISO	2.5 kV RMS - Allows direct mounting on insulated heat sinks in Class I safety-compliant AC-DC power supplies.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high dV/dt commutation in bridge configurations.
T_J range	–55 to 150 °C - Rated for operation in industrial environments including motor drives and solar inverters.

Pinout & Package

STFU10N80K5 uses the TO-220FP ultra narrow leads package (ECOPACK® compliant), with isolated drain tab for enhanced creepage/clearance. The package features a molded plastic body, internal copper leadframe, and integral heat sink mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; Zener-clamped to ±30 V for ESD robustness.
2 (D)	Drain	High-voltage output node; electrically connected to metal tab; requires isolation from heatsink unless floating design.
3 (S)	Source	Power return path and reference for gate drive; connects to PCB ground plane or source node of half-bridge.

Key Features

Feature	Design Value
Ultra-low gate charge	22 nC total gate charge enables >200 kHz switching in PFC stages with minimal driver loss.
Low FoM (R_DS(on) × Q_g)	13.2 Ω·nC - Optimized trade-off between conduction and switching loss for high-efficiency 65–300 kHz SMPS.
Zener-protected gate	Integrated bidirectional Zener clamps gate-to-source to ±30 V, eliminating need for external TVS in most layouts.
100% avalanche tested	Each unit undergoes unclamped inductive switching test at I_AR = 3 A, ensuring reliability in real-world fault conditions.
TO-220FP ultra narrow leads	Narrower lead pitch (2.54 mm vs standard 2.54–5.08 mm) improves PCB layout density and reduces parasitic inductance in high-di/dt paths.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 500–1000 W active clamp forward or LLC resonant converters operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling full line-referred DC bus voltage (≥640 V) with precise timing control via PWM controller.

Use Value: 470 mΩ R_DS(on) and 22 nC Q_g reduce both conduction loss and gate drive loss, enabling >95% efficiency at full load.

Use Scenario: Output rectification and OR-ing in 48 V intermediate bus converters with hot-swap capability.

IC Role / Device Role / Timing Role: Synchronous rectifier or ideal diode controller interface, leveraging low V_SD (1.5 V) and fast trr (370 ns) for reduced forward drop and reverse recovery loss.

Use Value: Integrated body diode with 36 A pulsed current rating supports high peak loads without external Schottky, simplifying BOM.

Photovoltaic Inverters

Motor Drive Stages

Use Scenario: DC-link switching in string inverters where 800 V blocking capability accommodates PV array open-circuit voltages up to 1000 V.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter legs, requiring high dv/dt immunity and thermal stability.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during fast voltage transitions across split DC bus capacitors.

Use Scenario: Brake chopper or DC link protection switch in HVAC compressors and industrial servo drives operating at 400–690 VAC input.

IC Role / Device Role / Timing Role: Energy-dumping switch activated during regenerative braking to dissipate excess kinetic energy into braking resistors.

Use Value: 130 mJ single-pulse avalanche energy rating allows safe absorption of repeated inductive kickback without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW10N80K5	Same die, TO-247 package; higher R_thJC (0.5 °C/W vs 4.2 °C/W) but larger heatsink interface area.	Better suited for forced-air-cooled 1–3 kW inverters where thermal mass outweighs lead inductance concerns.	Select when board space permits larger package and thermal management prioritizes junction-to-heatsink over PCB trace inductance.
IPP60R099C7	650 V rating, 99 mΩ R_DS(on), 33 nC Q_g; CoolMOS™ C7 technology, no integrated Zener protection.	Limited to 650 V systems; requires external gate protection and exhibits higher switching loss at same frequency.	Choose only if system DC bus is ≤400 V and cost-per-watt optimization favors lower R_DS(on) over voltage margin and ruggedness.

Compared with STW10N80K5 and IPP60R099C7, STFU10N80K5 uniquely combines 800 V rating, ultra-narrow-lead TO-220FP packaging, Zener gate protection, and 100% avalanche screening-making it optimal for space-constrained, safety-critical 700–800 V offline power stages where reliability and layout simplicity are paramount.

Availability

STFU10N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, photovoltaic inverters, and motor drive brake choppers requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for STFU10N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STFU10N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications demanding 800 V blocking capability and superior FoM.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU10N80K5 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10410 Rev 6. This derating reflects thermal limits of the TO-220FP ultra narrow leads package, where junction-to-case thermal resistance is 4.2 °C/W and maximum T_J is 150 °C.

Does STFU10N80K5 include an integrated body diode, and what are its key parameters?

Yes, it integrates a fast-recovery N-channel body diode rated for 9 A continuous and 36 A pulsed source-drain current. Key parameters include V_SD = 1.5 V at I_SD = 9 A, t_rr = 370 ns (T_J = 25 °C), and Q_rr = 4.58 µC, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

How does the TO-220FP ultra narrow leads package differ mechanically from standard TO-220FP?

The TO-220FP ultra narrow leads variant has reduced lead pitch (F = 0.65–0.75 mm vs 0.75–1.00 mm in standard TO-220FP type B) and narrower lead width (L5 = 2.50–3.10 mm vs 2.90–3.60 mm), per Table 9 in DS10410. This minimizes PCB trace inductance and improves high-frequency layout compactness without sacrificing creepage distance.

Is STFU10N80K5 suitable for use in zero-voltage switching (ZVS) circuits?

Yes-its low Crss (0.8 pF), low Coss (53 pF), and 22 nC Q_g support reliable ZVS operation in LLC and phase-shifted full-bridge converters. The 50 V/ns dv/dt ruggedness ensures gate stability during resonant transitions, and the 130 mJ E_AS provides margin against residual voltage spikes during soft-switching boundary conditions.

STFU10N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 635 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STFU10N80K5 FAQ

1.How can I place an order for STFU10N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFU10N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFU10N80K5 reliable?

The price and inventory of STFU10N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFU10N80K5 is usually 5 days.

3.What payment methods are accepted for STFU10N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFU10N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFU10N80K5?

STFU10N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFU10N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFU10N80K5?

For technical support, including STFU10N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFU10N80K5 requirements.

6.How does Aetrix verify that STFU10N80K5 is sourced from the original manufacturer or authorized distributors?

All STFU10N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFU10N80K5 meets industry standards.

7.What is the process for return or replacement of STFU10N80K5?

All STFU10N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STFU10N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFU10N80K5 part is unused and in its original packaging.

Return procedure for STFU10N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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