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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFU13N65M2

Name: STFU13N65M2
Brand: STMicroelectronics
SKU: STFU13N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFU13N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STFU13N65M2.pdf

Description:: MOSFET N-CH 650V 10A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STFU13N65M2 from STMicroelectronics is an N-channel 650 V, 10 A Power MOSFET in TO-220FP ultra narrow leads package, fabricated with MDmesh M2 technology. It delivers 370 mΩ typical R_DS(on), 17 nC total gate charge, and 27.5 pF output capacitance (C_oss), enabling high-efficiency operation in hard-switched PFC and SMPS stages.

For engineers reviewing the STFU13N65M2 datasheet, STFU13N65M2 pinout, STFU13N65M2 application, or STFU13N65M2 equivalent, key selection criteria include avalanche ruggedness (350 mJ E_AS), Zener-protected gate, dv/dt immunity (50 V/ns), and 100% UIS-tested reliability for industrial power conversion designs.

Technical Context

This MOSFET employs a strip-based MDmesh M2 vertical structure to minimize conduction loss while optimizing switching behavior. Its low C_oss profile and 168.5 pF C_oss,eq across 0–520 V support reduced switching loss and improved light-load efficiency in continuous conduction mode (CCM) boost converters.

The device integrates a monolithic Zener diode between gate and source for ±25 V gate protection and is fully rated for unclamped inductive switching (UIS) up to 1.8 A repetitive avalanche current. Thermal resistance is specified at R_thJC = 5 °C/W, supporting high-power density mounting on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin.
R_DS(on) max	430 mΩ @ V_GS = 10 V, I_D = 5 A - Enables <1.5 W conduction loss at 5 A continuous drain current.
Q_g	17 nC - Reduces gate drive power and enables use with low-current drivers in high-frequency (>100 kHz) topologies.
C_oss	27.5 pF - Low output capacitance minimizes turn-off energy loss and improves zero-voltage switching (ZVS) feasibility.
E_AS	350 mJ - Confirmed single-pulse avalanche energy supports robust operation during transient overloads without failure.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast voltage transients in high-di/dt motor drives and inverters.
T_J max	150 °C - Allows sustained operation in enclosed industrial enclosures with limited airflow.

Pinout & Package

TO-220FP ultra narrow leads package: insulated case, single-side heat transfer, 3-pin through-hole mount with internal heatsink isolation (V_ISO = 2.5 kV RMS). Dimensions per DS10893 Rev 2: L3 = 28.5–30.5 mm, L4 = 10.2–11.0 mm, G1 = 2.40–2.70 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; Zener-clamped to S; requires ≤±25 V drive; 6.5 Ω intrinsic gate resistance limits ringing.
D (Pin 2)	Drain	High-side switch node; connected to internal die backside; electrically isolated from case by 2.5 kV insulation.
S (Pin 3)	Source	Power return path and gate reference; forms common node with body diode cathode; used for current sensing.

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior-generation 650 V MOSFETs, improving efficiency in 65–100 kHz PFC stages.
100% UIS avalanche tested	Each unit validated for 350 mJ single-pulse energy at T_J = 25 °C, eliminating field failures due to inductive kickback in flyback and LLC resonant converters.
Zener-protected gate	Integrated 22 V Zener clamps gate-source voltage during ESD events or gate driver faults, preventing oxide breakdown without external components.
Optimized C_oss profile	C_oss,eq = 168.5 pF over 0–520 V ensures predictable turn-off timing and reduces capacitive losses in hard-switched half-bridges.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW CCM boost PFC front-end stages operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element controlling input current waveform shape and power factor correction timing.

Use Value: 370 mΩ R_DS(on) and 17 nC Q_g reduce combined conduction/switching loss to <2.1 W at full load, enabling >96% efficiency.

Use Scenario: Main switch in 48 V input telecom rectifier modules with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Isolated high-side switch managing bulk DC-DC conversion and fault isolation timing.

Use Value: 2.5 kV isolation rating and 50 V/ns dv/dt ruggedness ensure reliable operation during hot-plug transients and bus fault recovery.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: Phase-leg switch in 3–7.5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz inverter legs, handling bidirectional current via integrated body diode.

Use Value: 312 ns t_rr and 2.7 µC Q_rr at 25 °C minimize commutation loss and diode reverse recovery stress during PWM transitions.

Use Scenario: DC-link switch in string-level solar microinverters and battery storage bi-directional converters.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing MPPT tracking and grid synchronization timing.

Use Value: 150 °C maximum junction temperature and -55 °C minimum storage rating support outdoor deployment in desert and arctic climates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N65M2	Same die, TO-220 (non-FP) package; no internal insulation; R_thJC = 4.5 °C/W; V_ISO not rated.	Requires external insulator for heatsink mounting; unsuitable where creepage/clearance or safety isolation is mandated.	Select when cost sensitivity outweighs isolation needs and PCB layout allows non-isolated mounting.
IPP65R430C7	650 V, 430 mΩ, 10 A CoolMOS™ C7; Q_g = 15.5 nC; C_oss = 25 pF; TO-220FP compatible.	Lower gate charge but higher price; slightly lower C_oss; different gate threshold (2.5–3.5 V vs. 2–4 V).	Select when prioritizing minimal gate drive loss in >200 kHz resonant topologies with tight thermal budgets.

Compared with STP13N65M2, STFU13N65M2 adds 2.5 kV isolation and 0.5 °C/W higher thermal resistance-critical for safety-certified AC/DC systems. Versus IPP65R430C7, it trades 1.5 nC lower Q_g for broader gate threshold tolerance and proven avalanche margin in industrial surge environments.

Availability

STFU13N65M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for STFU13N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STFU13N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU13N65M2 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10893 Rev 2. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the SOA boundary at elevated ambient temperatures.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, STFU13N65M2 features a monolithic source-drain body diode rated for 10 A continuous and 40 A pulsed current. At T_J = 25 °C, its reverse recovery time is 312 ns with 2.7 µC Q_rr; at 150 °C, t_rr increases to 464 ns and Q_rr to 4.1 µC, per Table 7.

Is the TO-220FP ultra narrow leads package lead-free and RoHS-compliant?

Yes, STFU13N65M2 is manufactured in ST's ECOPACK2-compliant TO-220FP ultra narrow leads package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full compliance documentation is available via ST's quality portal using order code STFU13N65M2.

Can this device replace older STP13N65M2 in existing designs without layout changes?

No-while both share identical die and pinout, STFU13N65M2's TO-220FP package has insulated leads and different mechanical dimensions (e.g., L3 = 28.5–30.5 mm vs. STP13N65M2's 29.5–31.5 mm), requiring verification of heatsink clearance, solder pad spacing, and creepage distance before drop-in substitution.

STFU13N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STFU13N65M2 FAQ

1.How can I place an order for STFU13N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFU13N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFU13N65M2 reliable?

The price and inventory of STFU13N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFU13N65M2 is usually 5 days.

3.What payment methods are accepted for STFU13N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFU13N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFU13N65M2?

STFU13N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFU13N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFU13N65M2?

For technical support, including STFU13N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFU13N65M2 requirements.

6.How does Aetrix verify that STFU13N65M2 is sourced from the original manufacturer or authorized distributors?

All STFU13N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFU13N65M2 meets industry standards.

7.What is the process for return or replacement of STFU13N65M2?

All STFU13N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFU13N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFU13N65M2 part is unused and in its original packaging.

Return procedure for STFU13N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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