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STMicroelectronics STFU13N80K5

Part No.:
STFU13N80K5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTFU13N80K5.pdf
Description:
MOSFET N-CH 800V 12A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:899

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Product details

Overview

STFU13N80K5 from STMicroelectronics is an N-channel 800 V, 0.37 Ω typ. (0.45 Ω max), 12 A MDmesh™ K5 Power MOSFET in TO-220FP ultra narrow leads package, designed for high-voltage switching in offline SMPS and PFC stages with low conduction and switching losses.

For engineers reviewing the STFU13N80K5 datasheet, STFU13N80K5 pinout, STFU13N80K5 application, or STFU13N80K5 equivalent, key selection criteria include RDS(on), Qg (29 nC), avalanche energy rating (148 mJ), Zener-protected gate, and TO-220FP thermal resistance (Rthj-case = 3.57 °C/W).

Technical Context

This MOSFET employs ST's MDmesh™ K5 vertical superjunction technology to achieve industry-leading figure of merit (RDS(on) × area) and ultra-low gate charge. Its 800 V V(BR)DSS and 100% avalanche-tested construction support robust operation in unclamped inductive switching.

The integrated back-to-back gate-source Zener diodes (V(BR)GSO = 30 V) provide ESD protection without external components. The device features low Coss (50 pF) and Co(er) (43 pF), enabling high-frequency hard-switching efficiency in >100 kHz topologies.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS800 V - supports primary-side switching in universal-input 85–265 VAC offline converters
RDS(on) max0.45 Ω at VGS = 10 V, ID = 6 A - enables <1.5 W conduction loss at 12 A continuous
Qg29 nC - reduces gate drive power and enables fast turn-on/turn-off (td(on) = 16 ns)
EAS148 mJ at Tj = 25 °C - ensures reliable unclamped inductive switching in PFC and flyback designs
Rthj-case3.57 °C/W - allows 35 W dissipation with ≤125 °C case temperature rise above ambient
V(BR)GSO30 V - built-in Zener clamps gate voltage during transients, eliminating need for external gate protection
Coss50 pF at VDS = 100 V - minimizes capacitive switching loss and improves light-load efficiency

Pinout & Package

TO-220FP ultra narrow leads package: insulated case, single-row 3-pin through-hole mount, optimized for compact heatsink mounting and automated insertion. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; accepts 10 V logic-level drive; protected by internal 30 V Zener
Pin 2 (D)DrainMain high-voltage power terminal; electrically connected to metal tab for direct heatsinking
Pin 3 (S)SourcePower return path and reference for gate drive; tied to PCB ground plane in most topologies

Key Features

FeatureDesign Value
MDmesh™ K5 superjunction structureReduces RDS(on) × area by >30% vs prior K3/K4 generations, enabling smaller heatsinks
Ultra-low Qg (29 nC)Lowers gate driver IC stress and enables higher PWM frequencies without excessive drive loss
100% avalanche testedGuarantees single-pulse ruggedness up to 148 mJ, critical for PFC boost choke recovery
Zener-protected gateEliminates external gate clamp diodes, reducing BOM count and layout complexity
ECOPACK® compliantMeets RoHS and halogen-free requirements for industrial and consumer power supplies

Applications

Industrial Switched-Mode Power SuppliesServer & Telecom Rectifiers

Use Scenario: Primary-side switch in 500–1000 W LLC resonant and hard-switched forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 800 V DC bus with 12 A peak current.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses, improving full-load efficiency by ≥0.8% over legacy 800 V MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge rectifier stage in 3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Synchronous rectification control switch with fast body diode recovery (trr = 406 ns).

Use Value: Integrated Zener protection and low Coss enable stable gate control under high dv/dt noise, reducing EMI filter size.

EV Onboard Chargers (OBC)High-Voltage DC-DC Converters

Use Scenario: Boost switch in bidirectional AC/DC + DC/DC OBC stages operating at 400–800 V battery interface.

IC Role / Device Role / Timing Role: Unidirectional high-side switch with avalanche-rated ruggedness for fault tolerance.

Use Value: 148 mJ EAS withstands load dump and short-circuit events without failure, supporting ASIL-B functional safety compliance.

Use Scenario: Isolated DC-DC converter primary switch in battery management systems and traction inverters.

IC Role / Device Role / Timing Role: High-efficiency power switch in 100–300 kHz isolated flyback or forward topologies.

Use Value: TO-220FP insulation (2500 V RMS) enables safe creepage/clearance on compact PCBs, reducing isolation transformer size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW12N80K5Same MDmesh™ K5 process, but TO-247 package; RDS(on) = 0.39 Ω max; higher PTOT = 45 WBetter thermal performance in high-power (>600 W), forced-air-cooled systemsSelect when board space permits larger package and junction temperature margin is critical
IPP60R190C7Infineon CoolMOS™ C7; 600 V rating; RDS(on) = 0.19 Ω; lower Qg = 22 nCNot suitable for 800 V bus; requires derating or series stacking for same voltage classChoose only for 400 V DC-link designs where lower RDS(on) justifies reduced voltage capability

Compared with STW12N80K5 and IPP60R190C7, STFU13N80K5 uniquely balances 800 V capability, TO-220FP compactness, and Zener-protected gate-making it optimal for cost-sensitive, space-constrained 300–800 W offline power supplies requiring no external gate protection.

Availability

STFU13N80K5 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, server rectifiers, EV onboard chargers, and high-voltage DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for STFU13N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in 800 V-class SMPS, PFC, and industrial motor drives.

FAQ

Is STFU13N80K5 suitable for zero-voltage switching (ZVS) topologies?

Yes. With low Coss (50 pF), Co(er) (43 pF), and fast switching times (td(off) = 42 ns), STFU13N80K5 supports efficient ZVS operation in LLC resonant converters up to 300 kHz. Its 800 V rating ensures sufficient voltage margin during resonant voltage peaks.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies ID = 7.6 A at TC = 100 °C, limited by package thermal constraints. This value assumes proper heatsinking and accounts for RDS(on) increase with temperature (typical +0.5%/°C).

Does the built-in Zener protect against both positive and negative gate transients?

Yes. The back-to-back Zener configuration provides symmetrical ±30 V clamping (V(BR)GSO = ±30 V), protecting against both positive gate overvoltage and negative gate swing during fast turn-off or Miller-induced coupling.

Can STFU13N80K5 replace older STP12NK80Z in existing designs?

Yes, with minor layout review. STFU13N80K5 offers lower RDS(on) (0.45 Ω vs 0.63 Ω), lower Qg (29 nC vs 45 nC), and Zener protection-improving efficiency and reliability. Pinout and package are identical (TO-220FP), enabling drop-in replacement.

STFU13N80K5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ K5
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STFU13N80K5 FAQ

1.How can I place an order for STFU13N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFU13N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFU13N80K5 reliable?

The price and inventory of STFU13N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFU13N80K5 is usually 5 days.

3.What payment methods are accepted for STFU13N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFU13N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFU13N80K5?

STFU13N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFU13N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFU13N80K5?

For technical support, including STFU13N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFU13N80K5 requirements.

6.How does Aetrix verify that STFU13N80K5 is sourced from the original manufacturer or authorized distributors?

All STFU13N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFU13N80K5 meets industry standards.

7.What is the process for return or replacement of STFU13N80K5?

All STFU13N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STFU13N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFU13N80K5 part is unused and in its original packaging.

Return procedure for STFU13N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STFU13N80K5 Tags

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