STMicroelectronics STFU14N80K5

Overview

STFU14N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh™ K5 technology in a TO-220FP ultra narrow leads package. It delivers 800 V V_DS, 0.445 Ω max R_DS(on) at 10 V_GS, 12 A continuous drain current (T_C = 25 °C), and 22 nC total gate charge - optimized for high-efficiency, high-power-density switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STFU14N80K5 datasheet, STFU14N80K5 pinout, STFU14N80K5 application, or STFU14N80K5 equivalent, key selection criteria include its 2500 V_RMS insulation rating, 100% avalanche-tested ruggedness, Zener-protected gate, and industry-leading FoM (R_DS(on) × Q_g) for hard-switched PFC and resonant topologies.

Technical Context

This device employs ST's proprietary vertical MDmesh™ K5 structure to simultaneously minimize conduction loss and switching loss. Its ultra-low gate charge (22 nC) and low output capacitance (C_oss = 60 pF typ.) enable fast, efficient hard switching up to 100 kHz with reduced EMI and gate drive power demand.

The integrated back-to-back gate-source Zener diodes (V_BR = 30 V) provide robust ±30 V gate protection without external clamping. The 4.2 °C/W junction-to-case thermal resistance and 2500 V_RMS isolation support direct mounting to heatsinks in high-reliability industrial power supplies.

Key Specifications

Pinout & Package

Package: TO-220FP ultra narrow leads - thermally enhanced variant with insulated tab, 4.2 °C/W R_th(j-c), and 2500 V_RMS isolation between leads and heatsink-mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STW12N80K5 and IPP60R099C7, STFU14N80K5 uniquely balances 800 V isolation, 2500 V_RMS creepage, and MDmesh™ K5 switching efficiency - making it the sole option for compact, safety-certified, universal-input industrial power supplies requiring both high voltage and integrated gate protection.

Availability

STFU14N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for UL/IEC certification.

Supply support for STFU14N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's MDmesh™ K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including PFC, resonant converters, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU14N80K5 supports 7.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12888. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the SOA boundary at elevated ambient temperatures in enclosed power enclosures.

Does this MOSFET require an external gate resistor for stability?

A gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 14), confirming stable turn-on/turn-off behavior without oscillation. While not mandatory, a 4.7–10 Ω series resistor is recommended to dampen gate loop inductance and prevent unintended turn-on due to dv/dt coupling in high-noise industrial environments.

Can STFU14N80K5 replace STP14NK80Z in existing designs?

Yes - STFU14N80K5 offers identical pinout, 800 V rating, and improved R_DS(on) (0.445 Ω vs 0.48 Ω) and Q_g (22 nC vs 35 nC). Its Zener-protected gate adds robustness over the Z-series, and TO-220FP packaging maintains mechanical compatibility while enabling safer heatsink mounting.

What is the reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

At T_j = 150 °C, the body diode exhibits Q_rr = 5.85 µC under test conditions of I_SD = 12 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7, second row). This value is 22% higher than at 25 °C, reflecting increased minority carrier lifetime - critical for synchronous rectification timing in LLC converters.