STMicroelectronics STFU15N80K5

Overview

STFU15N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 800 V V_DS, 375 mΩ R_DS(on) max at 10 V V_GS, and 14 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (32 nC), 100% avalanche tested operation, and integrated Zener-protected gate, targeting high-efficiency switch-mode power supplies and industrial AC-DC converters.

For engineers reviewing the STFU15N80K5 datasheet, STFU15N80K5 pinout, STFU15N80K5 application, or STFU15N80K5 equivalent, key selection criteria include its 800 V blocking capability, 300 mΩ typical R_DS(on), 4.17 °C/W junction-to-case thermal resistance, 2500 V RMS insulation withstand voltage, and TO-220FP ultra narrow leads package compatibility with constrained PCB layouts.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (R_DS(on) × Q_g = 12 mΩ·nC), enabling high power density in hard-switched topologies. Its low C_iss (1100 pF typ.) and minimized Crss (1.5 pF) reduce switching losses and improve EMI behavior under fast dv/dt conditions up to 4.5 V/ns.

The built-in back-to-back gate-source Zener diodes provide ±30 V V_(BR)GSO clamping without external components, while the source-drain diode supports 14 A continuous conduction and exhibits 445 ns trr at 150 °C - critical for quasi-resonant and LLC converter freewheeling paths.

Key Specifications

Pinout & Package

Supplied in TO-220FP ultra narrow leads package: isolated tab, 3-pin through-hole outline with 2.5–2.7 mm lead width, 10.0–10.4 mm height, and 28.5–30.5 mm length. Thermal pad is electrically connected to drain (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW15N80K5, STFU15N80K5 trades thermal performance for isolation and compactness; versus IPP60R190C7, it delivers essential 800 V capability at higher conduction loss but ensures safe operation across universal AC input ranges and industrial 3-phase rectified buses.

Availability

STFU15N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom power supplies, medical auxiliary power, and EV charging station PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STFU15N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion systems - specifically engineered to replace older planar MOSFETs in 600–900 V applications where R_DS(on) × Q_g FoM directly impacts system size, thermal design, and total cost of ownership.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU15N80K5 supports 8.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10950 Rev 3. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries when mounted on a 25 °C heatsink with 4.17 °C/W thermal resistance.

Does this MOSFET include intrinsic gate protection?

Yes - the device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage (V_(BR)GSO), verified per Table 8. This eliminates the need for external gate protection components and maintains robustness against ESD and transient overvoltage during handling and operation.

Can STFU15N80K5 be used in avalanche mode repeatedly?

No - the 150 mJ E_AS rating applies to single-pulse avalanche only, with starting junction temperature at 25 °C. Repetitive avalanche is not characterized or guaranteed; the device must be operated within its SOA and voltage/current limits to avoid cumulative degradation.

How does the TO-220FP ultra narrow leads package affect PCB layout?

The TO-220FP ultra narrow leads (2.5–2.7 mm width) reduce PCB real estate by ~35% versus standard TO-220FP, enabling tighter trace spacing and improved creepage in high-voltage designs. Its insulated tab maintains 2500 V RMS isolation while allowing direct heatsink mounting without additional insulating hardware.