STMicroelectronics STFU18N65M2

Overview

STFU18N65M2 from STMicroelectronics is an N-channel 650 V, 275 mΩ typ. (330 mΩ max.), 12 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package, optimized for high-efficiency hard-switching and resonant converters in industrial SMPS and PFC stages.

For engineers reviewing the STFU18N65M2 datasheet, STFU18N65M2 pinout, STFU18N65M2 application, or STFU18N65M2 equivalent, key selection criteria include its 20 nC total gate charge, 35 pF typical Coss, 50 V/ns MOSFET dv/dt ruggedness, 100% avalanche tested capability, and Zener-protected gate.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining robust switching behavior. Its low Q_gd/Q_gs ratio (8.5 nC / 3.6 nC) and 175 pF C_oss,eq across 0–520 V support fast, low-loss turn-off in high-voltage topologies.

The integrated Zener-protected gate withstands ±25 V stress, and its 2.5 kV RMS insulation rating enables direct mounting on isolated heat sinks. Avalanche energy rating of 450 mJ (E_AS) at T_J = 25 °C supports unclamped inductive switching reliability.

Key Specifications

Pinout & Package

Package: TO-220FP ultra narrow leads - insulated case, vertical mounting, 2.5 kV RMS isolation, optimized for compact heatsink integration in enclosed power supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW18N65M2, STFU18N65M2 trades lower thermal performance for integrated isolation and compact footprint; versus IPP65R380C7, it delivers lower R_DS(on), guaranteed avalanche rating, and gate protection-critical for cost-sensitive, space-constrained industrial SMPS where reliability and layout simplicity are prioritized.

Availability

STFU18N65M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server telecom PFC stages, solar microinverters, and EV on-board charger DC-DC stages requiring stable component supply and long-term design-in support.

Supply support for STFU18N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS for automotive, industrial, and power applications.

This device belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability hard-switching and resonant converters in industrial and telecom power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU18N65M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10906 Rev 3. This derating reflects thermal limitations of the TO-220FP package, not silicon capability, and must be applied in thermal design calculations for sustained operation.

Does this MOSFET include an integrated body diode, and what are its reverse recovery characteristics?

Yes, it features an integrated source-drain diode rated for 12 A continuous and 48 A pulsed current. At T_J = 25 °C, trr is 331 ns with Q_rr = 3.4 µC and I_RRM = 20.5 A under standard test conditions (ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V).

Can STFU18N65M2 be used in avalanche mode, and what is its single-pulse energy rating?

Yes, every unit is 100% tested for single-pulse avalanche ruggedness. The rated E_AS is 450 mJ at T_J = 25 °C with I_AR = 2 A and V_DD = 50 V, as defined in Table 3. Repetitive avalanche is not characterized and should be avoided in production designs.

What is the significance of the "ultra narrow leads" in the TO-220FP package?

The TO-220FP ultra narrow leads reduce lead pitch to 2.54 mm (0.1 inch), enabling tighter PCB trace routing and improved creepage/clearance in high-voltage layouts. Mechanical dimensions confirm lead width ≤0.75 mm (F dim) and spacing tolerance tightened to ±0.1 mm, supporting automated assembly in space-constrained power modules.