STMicroelectronics STFU23N80K5

Overview

STFU23N80K5 from STMicroelectronics is an N-channel 800 V, 230 mΩ (typ), 16 A MDmesh K5 Power MOSFET in TO-220FP ultra narrow leads package, featuring ultra-low gate charge (33 nC), 100% avalanche tested, and Zener-protected gate. It delivers high power density for high-voltage switching in industrial SMPS and PFC stages.

For engineers reviewing the STFU23N80K5 datasheet, STFU23N80K5 pinout, STFU23N80K5 application, or STFU23N80K5 equivalent, key selection criteria include R_DS(on) at 10 V, avalanche energy rating (400 mJ), dv/dt ruggedness (50 V/ns), and thermal resistance (R_thJC = 3.6 °C/W) for reliable high-stress operation.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical structure to reduce specific on-resistance and gate charge simultaneously. Its 800 V V_DS rating and 50 V/ns MOSFET dv/dt ruggedness enable robust operation in fast-switching, high-bus-voltage topologies without external snubbing.

The integrated body diode exhibits 410 ns typical reverse recovery time (T_J = 25 °C) and 7 µC Q_rr, supporting hard-switched and resonant converters where diode commutation stress must be minimized.

Key Specifications

Pinout & Package

TO-220FP ultra narrow leads package: insulated case, single-ended mounting, no heatsink isolation required. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N80K5 and IPP60R190C7, the STFU23N80K5 uniquely combines 800 V rating, TO-220FP compact insulation, and factory-verified avalanche capability-making it optimal for space-constrained, high-reliability 700–800 V industrial power stages where safety certification and surge resilience are mandatory.

Availability

STFU23N80K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STFU23N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh K5 series targets high-efficiency, high-voltage power conversion-specifically engineered to replace older superjunction MOSFETs in 600–800 V applications demanding lower R_DS(on), reduced gate charge, and guaranteed avalanche ruggedness.

FAQ

Is STFU23N80K5 suitable for hard-switched flyback converters at 100 kHz?

Yes. With 33 nC gate charge, 230 mΩ R_DS(on), and 50 V/ns dv/dt ruggedness, it supports reliable 100 kHz operation in 600–700 V flyback designs. Its 400 mJ E_AS rating also handles reflected output voltage spikes during overload or short-circuit events without failure.

Does the TO-220FP package require electrical isolation from the heatsink?

No. The TO-220FP ultra narrow leads package features an insulated case with 2.5 kV RMS isolation between all three leads and the external heatsink. This eliminates the need for insulating pads or shoulder washers in most mounting configurations.

What is the maximum continuous drain current at T_C = 100 °C?

The datasheet specifies 10 A continuous drain current at T_C = 100 °C. This is derived from thermal derating based on R_thJC = 3.6 °C/W and T_J(max) = 150 °C, ensuring safe operation under sustained high-temperature ambient conditions.

How does the Zener protection function during gate drive overshoot?

The integrated gate Zener clamps transients exceeding ±30 V relative to source, limiting gate oxide stress. It activates within nanoseconds during ESD or ringing events, preventing irreversible gate oxide breakdown while allowing standard 10–15 V gate drivers to operate without external protection components.