STMicroelectronics STFU24N60M2

Overview

STFU24N60M2 from STMicroelectronics is an N-channel 600 V, 18 A Power MOSFET in TO-220FP ultra narrow leads package, fabricated with MDmesh M2 technology. It delivers 168 mΩ typical R_DS(on), 29 nC total gate charge, and 15 V/ns diode recovery dv/dt ruggedness, enabling high-efficiency hard-switched PFC and SMPS designs in industrial power supplies.

For engineers reviewing the STFU24N60M2 datasheet, STFU24N60M2 pinout, STFU24N60M2 application, or STFU24N60M2 equivalent, key selection criteria include its 100% avalanche-tested robustness, Zener-protected gate, low C_oss (55 pF), and 2.5 kV insulation withstand voltage - critical for isolated high-voltage converter topologies.

Technical Context

This device employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching energy. Its 258 pF C_oss,eq (0–480 V) and 12 nC Q_gd support fast, low-loss turn-off in continuous conduction mode (CCM) boost converters.

The integrated Zener-protected gate enables direct 10 V drive without external clamping, while its 4.2 °C/W R_thJC and 100% unclamped inductive avalanche rating (E_AS = 180 mJ) ensure reliability under transient overloads and hard commutation stress.

Key Specifications

Pinout & Package

Package: TO-220FP ultra narrow leads - surface-mount compatible footprint with insulated case, 4.2 °C/W junction-to-case thermal resistance, and 2.5 kV isolation between leads and heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N60M2 and FDPF18N60NZ, STFU24N60M2 uniquely combines TO-220FP insulation, Zener gate protection, and MDmesh M2 low C_oss/Q_g - making it optimal for space-constrained, safety-critical 100–200 kHz industrial SMPS where thermal and electrical robustness are non-negotiable.

Availability

STFU24N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and UPS inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STFU24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU24N60M2 supports 12 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10939 Rev 3. This derating reflects thermal limits imposed by its 4.2 °C/W R_thJC and 150 °C maximum junction temperature, ensuring safe operation in enclosed power enclosures without forced airflow.

Does this MOSFET require external gate protection?

No. The STFU24N60M2 integrates a Zener diode between gate and source, clamping gate voltage to ±25 V. This eliminates the need for external TVS diodes in standard 10–15 V gate drive circuits, reducing BOM count and PCB area while maintaining gate oxide integrity under transient conditions.

How does its avalanche rating compare to standard test requirements?

STFU24N60M2 undergoes 100% production avalanche testing per JEDEC JESD22-A110, with single-pulse E_AS = 180 mJ at T_J = 25 °C. This exceeds typical industry minimums (e.g., 100 mJ) and validates robustness in unclamped inductive switching events common in flyback and forward converters.

Can it be used in totem-pole PFC topologies?

Yes. Its 332 ns reverse recovery time (t_rr) at T_J = 25 °C, 4 µC Q_rr, and 15 V/ns diode recovery dv/dt rating make it suitable for high-frequency totem-pole PFC. However, body diode conduction must be minimized via precise timing control to avoid excessive recovery loss at >100 kHz operation.