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STMicroelectronics STFU26N60M2

Part No.:
STFU26N60M2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTFU26N60M2.pdf
Description:
MOSFET N-CH 600V 20A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,701

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Product details

Overview

STFU26N60M2 from STMicroelectronics is an N-channel 600 V, 140 mΩ typ., 20 A MDmesh™ M2 Power MOSFET in TO-220FP ultra narrow leads package, optimized for high-efficiency LLC resonant converters and hard-switching SMPS. It features 34 nC total gate charge, 88 pF output capacitance, and 100% avalanche tested ruggedness with Zener-protected gate.

For engineers reviewing the STFU26N60M2 datasheet, STFU26N60M2 pinout, STFU26N60M2 application, or STFU26N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 250 mJ single-pulse avalanche energy, low Coss profile, and thermal resistance of 4.2 °C/W (junction-to-case).

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and optimize switching losses. Its 124 pF equivalent output capacitance (Coss,eq) across 0–480 V enables predictable soft-switching behavior in resonant topologies.

The device integrates a robust body diode with 360 ns reverse recovery time at 25 °C and 556 ns at 150 °C, supporting high-frequency operation in bridge configurations. Gate threshold voltage (2–4 V) and ±25 V gate-source rating ensure compatibility with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports primary-side switching in 400 V DC bus and universal AC input offline converters
RDS(on) max 165 mΩ at VGS = 10 V, ID = 10 A - enables <1.7 W conduction loss at 20 A continuous drain current
Qg 34 nC - reduces driver power demand and enables fast turn-on with low gate resistance (<5 Ω)
Coss 88 pF at VDS = 100 V - contributes to low stored output energy (EOSS = 10 µJ at 400 V)
EAS 250 mJ - provides margin against unclamped inductive switching stress without external snubbers
TJ max 150 °C - allows operation in thermally constrained industrial and server PSU environments
RthJC 4.2 °C/W - enables 30 W dissipation at ≤25 °C case temperature, critical for compact heatsink designs

Pinout & Package

Package: TO-220FP ultra narrow leads - insulated case, 3-pin through-hole, 10.4 mm height, 30.5 mm length, designed for high-voltage isolation and PCB space efficiency.

Pin/Terminal Circuit Role Design Meaning
G (Pin 1) Gate Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±25 V rating
D (Pin 2) Drain High-side switching node; connected to heat sink via insulated tab; rated for 600 V blocking
S (Pin 3) Source Power return path and gate reference; forms common node with driver ground in half-bridge layouts

Key Features

Feature Design Value
MDmesh M2 technology Combines low RDS(on) and low Coss via optimized trench and drift region doping for >95% efficiency in 100–300 kHz LLC converters
100% avalanche tested Guarantees minimum 3.8 A repetitive avalanche current and 250 mJ single-pulse energy under production test conditions
Zener-protected gate Integrated gate oxide protection clamps transient overvoltage to ±25 V, eliminating need for external gate Zener diodes
Ultra-low Qgd/Qgs ratio 16.3 nC / 5.6 nC = 2.9 - suppresses Miller-induced shoot-through in synchronous rectifiers and half-bridges
Optimized Coss profile Coss,eq = 124 pF (0–480 V) - enables precise zero-voltage switching timing control in resonant topologies

Applications

LLC Resonant Converter Primary Switch Industrial AC-DC Front-End

Use Scenario: High-efficiency 1–3 kW server PSU operating at 200–500 kHz with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge LLC topology; handles 600 V DC link and delivers 20 A peak current per phase.

Use Value: Low Coss and 34 nC Qg minimize switching loss and enable ZVS across full load range, improving efficiency by ≥0.8% vs. legacy superjunction MOSFETs.

Use Scenario: 3-phase rectified 600 V DC bus feeding isolated DC-DC modules in factory automation drives.

IC Role / Device Role / Timing Role: Active clamp or auxiliary switch in three-level NPC inverters; operates with 50 V/ns dv/dt ruggedness under fast bus transients.

Use Value: 100% avalanche testing and 2.5 kV insulation withstand voltage ensure reliability during line surges and motor regeneration events.

Telecom Rectifier Module EV Onboard Charger PFC Stage

Use Scenario: 1.5 kW telecom rectifier with active PFC + LLC dual-stage architecture, requiring high MTBF and thermal stability.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage; conducts 20 A RMS with 80 A pulsed capability.

Use Value: RDS(on) = 140 mΩ typ. and 4.2 °C/W RthJC limit junction rise to <95 °C at full load, enabling fanless operation in confined enclosures.

Use Scenario: Bidirectional OBC PFC stage handling 6.6 kW AC input (230 V, 32 A), subject to automotive thermal cycling (-40 to +125 °C).

IC Role / Device Role / Timing Role: Fast-switching PFC switch with integrated body diode; recovers in 360 ns at 25 °C and 556 ns at 150 °C.

Use Value: Stable VGS(th) (2–4 V) and normalized RDS(on) curve ensure consistent gate drive margin and conduction loss across automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW26N60M2 TO-247 package, identical die, higher RthJA (62.5 °C/W vs. 4.2 °C/W), no insulated case Requires external isolation for heatsink mounting; better suited for forced-air-cooled industrial inverters Select when higher power dissipation (>45 W) and mechanical robustness outweigh PCB space constraints
IPP60R190C7 600 V, 190 mΩ, 21 A, CoolMOS C7; lower Qg (25 nC) but higher Coss (110 pF) Superior light-load efficiency in DCM flyback; less optimal for LLC due to Coss nonlinearity Select for cost-sensitive consumer PSUs where ZVS margin is less critical than BOM count reduction

Compared with STW26N60M2 and IPP60R190C7, STFU26N60M2 uniquely balances low Coss, tight Qg, and insulated TO-220FP packaging-making it optimal for space-constrained, high-reliability LLC and industrial PFC designs where thermal interface simplicity and voltage isolation are mandatory.

Availability

STFU26N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC front-ends, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STFU26N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STFU26N60M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-frequency, high-efficiency resonant and hard-switched SMPS in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU26N60M2 supports 13 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS12254 Rev 2. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does this MOSFET require a negative gate turn-off voltage?

No. The STFU26N60M2 has a gate threshold voltage of 2–4 V and is fully compatible with 0 V/10 V gate drive. Its ±25 V VGS rating and Zener protection eliminate the need for negative turn-off bias, simplifying driver design in half-bridge and LLC applications.

How does the 2.5 kV insulation withstand voltage impact PCB layout?

The 2.5 kV RMS insulation rating between all three leads and the external heat sink allows direct mounting to grounded metal chassis without additional insulating hardware. This reduces thermal interface layers, lowers RthJC, and simplifies creepage/clearance compliance for EN 62368-1 in high-voltage industrial designs.

Is the body diode suitable for synchronous rectification?

No-the internal body diode is not optimized for synchronous rectification. Its 360 ns trr and 5 µC Qrr at 25 °C indicate moderate recovery performance. For SR applications, use dedicated low-Qrr MOSFETs or external Schottky diodes to avoid cross-conduction and reverse recovery loss.

STFU26N60M2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ M2
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1360 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STFU26N60M2 FAQ

1.How can I place an order for STFU26N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFU26N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFU26N60M2 reliable?

The price and inventory of STFU26N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFU26N60M2 is usually 5 days.

3.What payment methods are accepted for STFU26N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFU26N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFU26N60M2?

STFU26N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFU26N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFU26N60M2?

For technical support, including STFU26N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFU26N60M2 requirements.

6.How does Aetrix verify that STFU26N60M2 is sourced from the original manufacturer or authorized distributors?

All STFU26N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFU26N60M2 meets industry standards.

7.What is the process for return or replacement of STFU26N60M2?

All STFU26N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFU26N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFU26N60M2 part is unused and in its original packaging.

Return procedure for STFU26N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STFU26N60M2 Tags

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