STMicroelectronics STFU28N65M2

Overview

STFU28N65M2 from STMicroelectronics is an N-channel 650 V, 20 A Power MOSFET in TO-220FP ultra narrow leads package, featuring 180 mΩ max R_DS(on), 35 nC total gate charge, and 100% avalanche tested ruggedness. It employs MDmesh M2 technology with optimized C_oss profile and Zener-protected gate for high-efficiency hard-switching in offline SMPS and PFC stages.

For engineers reviewing the STFU28N65M2 datasheet, STFU28N65M2 pinout, STFU28N65M2 application, or STFU28N65M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 760 mJ single-pulse avalanche energy, 150 mΩ typical on-resistance at 10 V_GS, and 2.5 kV RMS insulation withstand voltage - all critical for industrial AC-DC converter reliability.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss (R_DS(on)) and switching loss (C_oss, Q_g). Its 307 pF C_oss,eq over 0–520 V enables predictable turn-off energy and reduced voltage overshoot in clamp-free flyback and LLC resonant topologies.

The integrated Zener-protected gate ensures ±25 V V_GS robustness, while 15 V/ns diode recovery dv/dt rating and 384 ns t_rr at 25 °C support fast, low-loss body diode commutation in synchronous rectification and half-bridge configurations.

Key Specifications

Pinout & Package

Package: TO-220FP ultra narrow leads - surface-mount compatible footprint with insulated case, 4.17 °C/W R_thJC, and 10.4 mm height for compact heatsink integration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW28N65M2 and IPW65R090CFD7, STFU28N65M2 uniquely balances low R_DS(on), low Q_g, integrated gate protection, and insulated TO-220FP packaging - making it optimal for space-constrained, safety-critical 500–1000 W industrial power supplies where board-level isolation and surge immunity are mandatory.

Availability

STFU28N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for STFU28N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V offline power conversion systems - emphasizing low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFU28N65M2 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10928 Rev 4. This derating reflects thermal limitations of the TO-220FP package with 4.17 °C/W R_thJC, ensuring safe operation within SOA boundaries without exceeding 150 °C junction temperature.

Does this MOSFET include integrated gate protection?

Yes - the STFU28N65M2 integrates a Zener diode between gate and source, clamping gate-source voltage to ±25 V. This eliminates the need for external gate protection components in most industrial applications and improves robustness against ESD and switching transients per IEC 61000-4-2 Level 4 requirements.

How does the C_oss,eq value impact snubber design?

The 307 pF C_oss,eq (measured across 0–520 V) directly determines turn-off energy E_off = ½ × C_oss,eq × V_DS². At 520 V, this yields ~42 µJ, enabling precise RC snubber sizing to limit V_DS overshoot to <10% without excessive power dissipation - unlike devices with nonlinear C_oss curves.

Is the TO-220FP ultra narrow leads package lead-free and RoHS compliant?

Yes - ST specifies the TO-220FP ultra narrow leads package for STFU28N65M2 as ECOPACK2 compliant, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "E2" marking per ST's ECOPACK grade definition, indicating full lead-free termination and halogen-free molding compound.