STMicroelectronics STFV3N150

Overview

STFV3N150 from STMicroelectronics is an N-channel 1500 V, 6 Ω (typ), 2.5 A PowerMESH™ high-voltage power MOSFET in TO-220FH package, designed for high-reliability switching in off-line SMPS, lighting ballasts, and industrial AC-DC converters where creepage >4 mm and 100% avalanche testing are required.

For engineers reviewing the STFV3N150 datasheet, STFV3N150 pinout, STFV3N150 application, or STFV3N150 equivalent, this device delivers verified 1500 V V_DSS, low 29.3 nC Q_g, 47 ns rise time, and 2500 V_RMS isolation - critical for high-voltage gate-drive integrity and thermal robustness in flyback and resonant topologies.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process with reinforced edge termination to achieve lowest R_DS(on) per die area among 1500 V devices. Its layout minimizes intrinsic capacitances (C_iss = 939 pF, C_oss = 102 pF) and gate charge (Q_g = 29.3 nC), enabling fast switching (t_r = 47 ns, t_f = 61 ns) under hard-switched conditions up to 750 V bus voltage.

The TO-220FH package provides full plastic isolation with >4 mm creepage distance and 2500 V_RMS insulation withstand voltage between all three leads and external heat sink - eliminating need for additional insulating hardware in high-CTI PCB designs.

Key Specifications

Pinout & Package

STFV3N150 is housed in a fully isolated TO-220FH (Fully Plastic High Voltage) package with creepage >4 mm and 2500 V_RMS insulation rating. The package features three leads in standard 1–2–3 configuration: Drain (tab), Gate, Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP3N150 and STW3N150, STFV3N150 trades 0.61 °C/W higher junction-to-case thermal resistance for integrated 2500 V_RMS isolation and >4 mm creepage - eliminating insulator pads, slots, and coating steps in safety-critical 230 VAC systems.

Availability

STFV3N150 is available at Aetrix Electronics and suitable for LED streetlight drivers, industrial PLC output stages, medical imaging HV supplies, and EV charging station auxiliary PSUs requiring stable component supply across multi-year production cycles.

Supply support for STFV3N150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for ruggedized switching in off-line AC-DC conversion, lighting, and industrial control where reliability under repetitive avalanche and high-voltage insulation are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFV3N150 supports 1.6 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FH package, which has R_thj-case = 1.5 °C/W. At 100 °C case, junction temperature reaches 150 °C - its absolute maximum rated value.

Does the body diode support bidirectional conduction in AC switching applications?

Yes - the integrated source-drain diode has I_SD = 2.5 A continuous and I_SDM = 10 A pulsed capability, with V_SD = 1.6 V at 2.5 A. Its reverse recovery characteristics (t_rr = 410 ns, Q_rr = 2.4 µC at 25 °C) are characterized for use in bidirectional AC switch and snubberless relay replacement applications.

Can STFV3N150 replace STP3N150 without layout changes?

No - although both share identical die, STFV3N150 uses the TO-220FH package with different leadframe geometry and creepage-enhanced molding compound. Pin 1 (Drain) remains tab-connected, but mechanical mounting holes, creepage paths, and thermal pad clearance differ. Layout redesign is required to accommodate TO-220FH's larger footprint and isolation requirements.

Is the 2500 V_RMS insulation rating certified to any safety standard?

The 2500 V_RMS insulation withstand voltage is measured per IEC 60747-5-2 test conditions (1 s, T_C = 25 °C) and supports compliance with reinforced insulation requirements in IEC 62368-1 and IEC 61000-4-5. Certification to end-equipment standards depends on full system-level evaluation including PCB layout, spacing, and potting.