STMicroelectronics STFV4N150

Overview

STFV4N150 from STMicroelectronics is an N-channel PowerMESH™ high-voltage power MOSFET in TO-220FH package, rated for 1500 V drain-source voltage, 4 A continuous drain current at 25 °C, and 5–7 Ω static on-resistance at V_GS = 10 V. It delivers high-speed switching with low gate charge (30 nC typical) and is 100% avalanche tested for ruggedness in high-energy inductive loads.

For engineers reviewing the STFV4N150 datasheet, STFV4N150 pinout, STFV4N150 application, or STFV4N150 equivalent, key selection criteria include its 1500 V blocking capability, creepage distance >4 mm (TO-220FH), isolated plastic packaging, and suitability for offline SMPS, AC-DC adapters, and solid-state relays requiring high-voltage unidirectional switching.

Technical Context

This device uses ST's high-voltage MESH OVERLAY™ process with proprietary edge termination to minimize R_DS(on) per die area and gate charge. Its intrinsic capacitances (C_iss = 1300 pF, C_oss = 120 pF, C_rss = 12 pF) and fast switching times (t_d(on) = 35 ns, t_f = 45 ns) support efficient operation in hard-switched topologies up to several hundred kHz.

The MOSFET features a fully isolated TO-220FH plastic package with reinforced creepage (>4 mm), enabling safe operation in high-impedance isolation barriers. Its source-drain diode exhibits 2 V forward drop at 4 A and 510 ns reverse recovery time at 25 °C - critical for synchronous rectification and freewheeling path design.

Key Specifications

Pinout & Package

STFV4N150 is housed in a TO-220FH (Fully Plastic High Voltage) package - a fully isolated, non-conductive plastic variant of TO-220 with extended creepage and no metal tab connection to drain. The case is electrically floating, enabling simplified mounting without insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4N150 and FQP4N150, STFV4N150 uniquely combines full package isolation (>4 mm creepage), low Q_g (30 nC), and 100% avalanche testing - making it optimal for safety-critical, high-reliability offline power stages where board-level isolation integrity is mandatory.

Availability

STFV4N150 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial solid-state relays, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle assurance, and compliance with IEC 60950-1 reinforced insulation requirements.

Supply support for STFV4N150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STFV4N150 belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for robust, high-efficiency switching in offline power supplies and industrial control systems operating above 1 kV.

FAQ

What is the maximum junction temperature and thermal resistance of STFV4N150?

The maximum operating junction temperature is 150 °C. Its thermal resistance junction-to-case is 0.78 °C/W (max) in TO-220FH package, meaning a 4 A continuous load at 7 Ω R_DS(on) generates ~112 W conduction loss - requiring a heatsink capable of maintaining case temperature ≤55 °C for safe operation.

Does STFV4N150 have an integrated body diode, and what are its recovery characteristics?

Yes, it includes an integral source-drain body diode with 2 V forward voltage at 4 A and 510 ns reverse recovery time at 25 °C (di/dt = 100 A/µs). At 150 °C, trr increases to 615 ns and Qrr rises to 4 µC - critical for designing snubber networks in freewheeling paths.

Can STFV4N150 be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage is 3–5 V (typical), but full enhancement requires V_GS ≥ 10 V to achieve specified R_DS(on) ≤ 7 Ω. A 3.3 V signal yields weak conduction and excessive heating; a dedicated gate driver (e.g., TC4420) or level-shifting circuit is required.

Is STFV4N150 RoHS-compliant and lead-free?

Yes - it is supplied in ST's ECOPACK® package with lead-free second-level interconnect, compliant with JEDEC JESD97 and EU RoHS Directive 2011/65/EU. The inner box label indicates lead-free status and specifies maximum soldering profile limits per JEDEC standards.