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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFW20N65M5

Name: STFW20N65M5
Brand: STMicroelectronics
SKU: STFW20N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFW20N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-3P-3 Full Pack

Datasheet:: STFW20N65M5.pdf

Description:: MOSFET N-CH 650V 18A ISOWATT

Quantity:: RFQ Add To RFQ list

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Inventory:4,271

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Product details

Overview

STFW20N65M5 from STMicroelectronics is an N-channel 650 V, 160 mΩ typ. (190 mΩ max), 18 A MDmesh M5 Power MOSFET in TO-220FP package, optimized for high-efficiency switching power supplies, PFC stages, and industrial SMPS where low conduction loss and robust dv/dt immunity are critical.

For engineers reviewing the STFW20N65M5 datasheet, STFW20N65M5 pinout, STFW20N65M5 application, or STFW20N65M5 equivalent, key selection criteria include its 15 V/ns peak diode recovery dv/dt capability, 100% avalanche-tested ruggedness, 4.17 °C/W R_thJC, and 270 mJ single-pulse avalanche energy - all validated under 150 °C junction operation.

Technical Context

This device implements ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high V_DSS rating and fast switching. Its gate threshold voltage (3–5 V) enables standard 10 V gate drive compatibility without requiring level-shifting circuitry.

The integrated body diode exhibits 288 ns reverse recovery time (T_J = 25 °C) and 4 µC Q_rr, supporting hard-switched and resonant topologies. The 36 nC total gate charge and 3.5 Ω intrinsic gate resistance support efficient gate driver sizing for <100 kHz to 300 kHz operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus designs with ≥50 % safety margin against transients
R_DS(on) max	190 mΩ at V_GS = 10 V, I_D = 9 A - ensures ≤3.1 W conduction loss at 18 A continuous current
I_D cont @ T_C = 25 °C	18 A - defines maximum continuous drain current with heatsink at ambient temperature
dv/dt capability	15 V/ns - enables reliable operation in high-di/dt inductive switching environments
E_AS	270 mJ - guarantees unclamped inductive switching survival without external snubbers
Q_g	36 nC - determines gate driver peak current requirement (~7.2 A for 5 ns rise time)
R_thJC	4.17 °C/W - sets minimum thermal interface conductance needed to maintain T_J ≤ 150 °C

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with internal heat sink tab, 3-pin through-hole mounting, 2.5 kV RMS isolation between leads and heat sink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control terminal; requires ≤±25 V drive; 3.5 Ω intrinsic resistance affects Miller plateau timing
2 (Middle)	Drain (D)	Main high-voltage power terminal; connected internally to metal tab; electrically isolated from heatsink by 2.5 kV RMS barrier
3 (Right)	Source (S)	Power return path and gate reference; forms common node with driver ground in low-side configurations

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Enables 650 V rating with 160 mΩ typ. R_DS(on), reducing conduction loss by ~35 % vs. prior-generation 650 V MOSFETs
100 % avalanche tested	Each unit validated for single-pulse E_AS ≥ 270 mJ, eliminating need for design margining against unclamped inductive energy
High dv/dt immunity	15 V/ns rated slope prevents spurious turn-on during fast voltage transitions in bridge-leg or PFC applications
Low Q_gd/Q_g ratio	18 nC / 36 nC = 0.5 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Enhanced body diode softness	Q_rr = 4 µC with I_RRM = 27 A - limits voltage overshoot and EMI during diode commutation in LLC or phase-shifted full-bridge

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main switch in active clamp forward or LLC resonant converter primary side.

Use Value: 160 mΩ R_DS(on) and 36 nC Q_g enable >95 % efficiency at full load while maintaining thermal headroom on compact heatsinks.

Use Scenario: Three-phase industrial motor drive with boost-type PFC front-end handling 10–20 kW.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM) PFC controller.

Use Value: 15 V/ns dv/dt rating and 288 ns t_rr minimize voltage spikes and EMI during zero-current switching transitions.

Solar Inverter DC-DC Stage

EV Onboard Charger HV Side

Use Scenario: String-level DC-DC optimizer in photovoltaic systems with 600–1000 V input range.

IC Role / Device Role / Timing Role: Isolated flyback or forward converter primary switch handling variable high-voltage DC input.

Use Value: 650 V V_DSS and 2.5 kV isolation withstand support direct connection to PV string without external isolation barriers.

Use Scenario: Bidirectional OBC architecture with 400 V/800 V battery interface and AC/DC + DC/DC conversion.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) isolation stage operating up to 200 kHz.

Use Value: 100 % avalanche testing ensures reliability during regenerative braking transients and grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 41 mΩ typ., TO-247-3L - lower R_DS(on) but higher Q_g (72 nC) and no isolation barrier	Requires external heatsink isolation; better for high-power, low-frequency (<100 kHz) applications	Select when lowest conduction loss dominates over gate drive complexity and isolation needs
STP20N65M5	Same die, TO-220 (non-FP) package - no internal insulation, R_thJC = 3.5 °C/W, no 2.5 kV isolation	Suitable only with isolated mounting hardware; lower thermal resistance but higher assembly cost	Choose when board-level isolation is already implemented and thermal performance is prioritized over safety certification

Compared with IPW65R041CFD7 and STP20N65M5, STFW20N65M5 uniquely combines certified 2.5 kV isolation, 4.17 °C/W thermal resistance, and MDmesh M5 efficiency in a single through-hole package - making it optimal for safety-critical, space-constrained, and thermally demanding industrial power designs.

Availability

STFW20N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar DC-DC optimizers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STFW20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial SMPS, renewable energy inverters, and EV charging infrastructure.

FAQ

Is STFW20N65M5 pin-compatible with STP20N65M5?

Yes - both share identical pinout (G-D-S) and TO-220 footprint. However, STFW20N65M5 uses the TO-220FP variant with insulated tab and 2.5 kV isolation, whereas STP20N65M5 uses non-insulated TO-220. Mechanical mounting and thermal interface requirements differ significantly despite identical pin assignment.

What is the maximum recommended gate resistor for hard-switching at 200 kHz?

Based on Q_g = 36 nC and typical driver output impedance, a 4.7 Ω gate resistor achieves ~10 ns V_GS rise/fall times, balancing switching loss and EMI. For 200 kHz operation, keep total gate loop inductance <15 nH and use Kelvin source connection to avoid oscillation during Miller plateau crossing.

Does STFW20N65M5 require negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. Its V_GS(th) of 3–5 V and absence of significant Miller capacitance coupling allow clean turn-off without negative bias, though –5 V may be used in ultra-high-noise environments to improve noise immunity.

Can STFW20N65M5 replace STW20N65M5 in existing designs?

No - STW20N65M5 is obsolete and was discontinued per DS9474 Rev 4 (Dec 2025). STFW20N65M5 is not a drop-in replacement: it lacks the TO-3PF package and has different thermal and isolation characteristics. Redesign validation is required for mechanical, thermal, and safety compliance.

STFW20N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M5

Package/Case:: TO-3P-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1434 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3PF

STFW20N65M5 FAQ

1.How can I place an order for STFW20N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFW20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFW20N65M5 reliable?

The price and inventory of STFW20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFW20N65M5 is usually 5 days.

3.What payment methods are accepted for STFW20N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFW20N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFW20N65M5?

STFW20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFW20N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFW20N65M5?

For technical support, including STFW20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFW20N65M5 requirements.

6.How does Aetrix verify that STFW20N65M5 is sourced from the original manufacturer or authorized distributors?

All STFW20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFW20N65M5 meets industry standards.

7.What is the process for return or replacement of STFW20N65M5?

All STFW20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STFW20N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFW20N65M5 part is unused and in its original packaging.

Return procedure for STFW20N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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