STMicroelectronics STFW24N60M2

Overview

STFW24N60M2 from STMicroelectronics is an N-channel 600 V, 168 mΩ (typ), 18 A MDmesh™ M2 Power MOSFET in TO-220FP package with integrated Zener-protected gate, 100% avalanche tested, and optimized for high-efficiency resonant and LCC converters operating at high switching frequencies.

For engineers reviewing the STFW24N60M2 datasheet, STFW24N60M2 pinout, STFW24N60M2 application, or STFW24N60M2 equivalent, key selection criteria include its low Qg (29 nC), ultra-low Coss eq. (258 pF), dv/dt ruggedness (50 V/ns), and Rthj-case of 4.2 °C/W - all critical for hard-switched and ZVS converter designs requiring reliability under repetitive stress.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance nonlinearity. Its Coss eq. of 258 pF (VDS = 0–480 V) enables predictable energy storage during turn-off and supports soft-switching transitions in LLC topologies.

The device features a Zener-protected gate (±25 V VGS rating), 15 V/ns diode recovery dv/dt capability, and 50 V/ns MOSFET dv/dt ruggedness - enabling robust operation in fast-switching, high-voltage inductive load circuits without external gate clamping.

Key Specifications

Pinout & Package

TO-220FP package: insulated tab, vertical mounting, 3-pin through-hole outline with creepage/clearance compliant for 2.5 kV RMS isolation between leads and heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF24N60M2 and STFI24N60M2, STFW24N60M2 uniquely balances isolation safety (2.5 kV), thermal resistance (4.2 °C/W), and compact TO-220FP form factor - making it optimal for space-constrained, safety-certified AC-DC converters where both creepage and thermal management matter.

Availability

STFW24N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for IEC/UL-certified designs.

Supply support for STFW24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STFW24N60M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies including resonant, LLC, and PFC topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFW24N60M2 supports 12 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9402 Rev 7. This rating accounts for thermal derating due to junction-to-case resistance (4.2 °C/W) and maximum T_j = 150 °C, ensuring safe operation in thermally demanding environments like enclosed power supplies.

Does STFW24N60M2 require external gate protection?

No - STFW24N60M2 integrates a Zener diode between gate and source, providing ±25 V V_GS clamping. This eliminates the need for external gate protection components in standard gate-drive configurations, reducing BOM count and layout complexity while maintaining robustness against overvoltage transients.

How does the Coss eq. value impact LLC resonant converter design?

The C_oss eq. of 258 pF (measured from 0–480 V) directly determines the effective output capacitance seen during turn-off. In LLC converters, this value sets the minimum required magnetizing current to achieve ZVS; a lower, more linear C_oss profile reduces dead-time sensitivity and improves light-load efficiency and startup reliability.

Is STFW24N60M2 suitable for unclamped inductive switching (UIS)?

Yes - STFW24N60M2 is 100% avalanche tested per datasheet DS9402 Rev 7, with rated repetitive avalanche current I_AR = 3.5 A and single-pulse energy E_AS = 180 mJ. These values validate its ability to safely absorb inductive energy during UIS events such as transformer saturation or short-circuit faults without degradation.