STMicroelectronics STFW2N105K5

Overview

STFW2N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 1050 V V_DS, 6 Ω typical R_DS(on), 1.5 A continuous drain current, and 30 W power dissipation in TO-3PF package. It delivers ultra-low gate charge (10 nC) and very low figure of merit for high-efficiency switching in HVAC, industrial SMPS, and photovoltaic inverters.

For engineers reviewing the STFW2N105K5 datasheet, STFW2N105K5 pinout, STFW2N105K5 application, or STFW2N105K5 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, Zener-protected gate, 3.5 kV insulation withstand voltage, and dv/dt ruggedness up to 50 V/ns - critical for reliable operation in high-noise, high-dV/dt environments.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture, enabling dramatic reduction in specific on-resistance while maintaining high breakdown voltage. Its optimized cell layout yields low C_iss (115 pF), ultra-low Q_gd (8 nC), and Co(er) of only 6 pF - directly supporting high-frequency, high-efficiency hard-switching topologies.

The integrated source-drain diode features 326 ns reverse recovery time at 25 °C and 525 ns at 150 °C, with Q_rr of 1.19 µC and 1.83 µC respectively, and is rated for 1.5 A continuous and 6 A pulsed conduction - enabling self-commutated operation in resonant and quasi-resonant converters without external diode substitution.

Key Specifications

Pinout & Package

Supplied in TO-3PF type A metal-can package with insulated base, featuring three terminals: Gate (pin 1), Drain (pin 2), Source (pin 3). The package provides mechanical robustness, high thermal conductivity, and 3.5 kV isolation between all leads and heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20NK100Z and IXTH1N100D2, STFW2N105K5 offers superior voltage margin (1050 V), integrated gate protection, and best-in-class FoM for space-constrained 1–3 kW HV applications - but requires TO-3PF-specific mechanical integration and higher gate drive precision due to lower Q_g.

Availability

STFW2N105K5 is available at Aetrix Electronics and suitable for industrial SMPS, photovoltaic inverters, and HVAC compressor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for safety-critical deployments.

Supply support for STFW2N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–1200 V industrial power conversion systems.

FAQ

What is the maximum safe operating voltage for STFW2N105K5 in continuous conduction mode?

The absolute maximum V_DS is 1050 V, but safe continuous operation requires derating per the SOA curve: at T_C = 25 °C, it supports 1.5 A up to 600 V; above 600 V, current must be reduced linearly to 0.5 A at 1050 V. Operation beyond SOA limits risks thermal runaway or avalanche-induced failure.

Does STFW2N105K5 require an external gate Zener diode?

No. The device integrates a monolithic gate-body Zener clamp rated for ±30 V, eliminating the need for external gate protection under normal and most fault conditions. External clamping is only recommended if gate drive transients exceed ±30 V peak or if system-level ESD immunity exceeds 8 kV contact discharge.

Can STFW2N105K5 be used in synchronous rectification topologies?

No. As a standard N-channel enhancement-mode MOSFET with non-optimized body diode (t_rr = 326–525 ns, Q_rr = 1.19–1.83 µC), it is unsuitable for synchronous rectification where low Q_rr and fast soft recovery are mandatory. It is designed for primary-side switching, not secondary-side rectification.

What thermal interface material is recommended for TO-3PF mounting?

ST recommends thermally conductive silicone grease (e.g., Dow Corning TC-5623) or phase-change pads (e.g., Laird TPCM 600) with 0.2–0.5 mm thickness and thermal conductivity ≥1.5 W/m·K. Mounting torque must not exceed 0.5 N·m to avoid case deformation and ensure uniform thermal contact across the insulated base.