STMicroelectronics STFW38N65M5

Overview

STFW38N65M5 from STMicroelectronics is an N-channel 650 V, 30 A Power MOSFET based on MDmesh M5 vertical process technology in TO-3PF package, featuring 73 mΩ typical R_DS(on), 50 V/ns MOSFET dv/dt ruggedness, and 100% avalanche tested performance for high-efficiency switching in industrial power supplies.

For engineers reviewing the STFW38N65M5 datasheet, STFW38N65M5 pinout, STFW38N65M5 application, or STFW38N65M5 equivalent, key selection criteria include its 3.5 kV insulation withstand voltage, 2.2 °C/W junction-to-case thermal resistance, low 5.8 pF Crss, and robust 660 mJ single-pulse avalanche energy - critical for hard-switched PFC and SMPS designs.

Technical Context

This device implements ST's MDmesh M5 silicon architecture, combining deep-trench vertical charge compensation with PowerMESH horizontal gate layout to achieve ultra-low R_DS(on) × area while maintaining high V_DSS and superior dv/dt immunity. Its 150 °C max junction temperature and 100% UIS-tested ruggedness support continuous operation under transient overvoltage conditions.

The integrated body diode delivers 382 ns reverse recovery time at 25 °C (522 ns at 150 °C) and 6.6 µC Q_rr, enabling reliable synchronous rectification and flyback snubberless operation without external diode supplementation in medium-frequency converters.

Key Specifications

Pinout & Package

STFW38N65M5 uses the TO-3PF (Type A) metal-can package with isolated tab, rated for 3.5 kV RMS insulation. The case serves as the drain terminal, enabling direct mounting to grounded heatsinks without insulating pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW38N65M5 and IPW65R095C7, STFW38N65M5 uniquely combines certified 3.5 kV reinforced isolation, 2.2 °C/W thermal resistance, and MDmesh M5's low R_DS(on) × Q_g - making it optimal for space-constrained, safety-critical AC/DC systems requiring both efficiency and regulatory compliance.

Availability

STFW38N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and EV onboard chargers requiring stable component supply and long-term lifecycle assurance.

Supply support for STFW38N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V industrial power conversion systems where low conduction loss, avalanche ruggedness, and isolation integrity are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFW38N65M5 supports 19 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10297 Rev 3. This rating reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be applied when heatsink ambient exceeds 75 °C in sealed enclosures.

Does the TO-3PF package provide galvanic isolation between the drain and heatsink?

Yes - the TO-3PF Type A package provides 3.5 kV RMS insulation withstand voltage from all three leads to the external heatsink (per Table 1, V_ISO). This is achieved via internal ceramic isolation, enabling direct mounting to grounded metal chassis without thermal pads or insulators while meeting reinforced isolation standards.

How does the body diode's reverse recovery performance compare at high junction temperature?

At T_J = 150 °C, reverse recovery time increases to 522 ns (vs. 382 ns at 25 °C) and Q_rr rises to 10.3 µC (vs. 6.6 µC), per Table 7. These elevated values necessitate careful snubber design and gate drive timing adjustment in hard-switched topologies operating near thermal limits.

Can STFW38N65M5 replace STF38N65M5 in existing TO-220FP designs?

No - STFW38N65M5 uses TO-3PF packaging with different pinout (tab = drain, lead 1 = gate, lead 3 = source), mechanical footprint, and thermal interface. Direct replacement requires PCB redesign, heatsink retooling, and validation of creepage/clearance due to altered lead spacing and isolation structure.