STMicroelectronics STFW40N60M2

Overview

STFW40N60M2 from STMicroelectronics is an N-channel 600 V, 78 mΩ typ. (88 mΩ max.), 34 A MDmesh™ M2 Power MOSFET in TO-3PF package, featuring 100% avalanche tested ruggedness, Zener-protected gate, and optimized C_oss profile for high-efficiency hard-switched PFC and SMPS stages in industrial power supplies.

For engineers reviewing the STFW40N60M2 datasheet, STFW40N60M2 pinout, STFW40N60M2 application, or STFW40N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 2.5 kV RMS insulation rating, 3.5 kV isolation withstand voltage, low 57 nC total gate charge, and suitability for continuous conduction mode (CCM) boost PFC designs requiring robust unclamped inductive switching capability.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining excellent dynamic performance: C_oss = 117 pF (typ.), C_iss = 2500 pF (typ.), and C_rss = 2.4 pF (typ.) at V_DS = 100 V, enabling fast switching with reduced capacitive losses.

Its 100% avalanche-tested capability supports 6 A repetitive avalanche current and 500 mJ single-pulse energy (E_AS) at T_J = 25 °C, and the integrated source-drain diode delivers 34 A continuous forward current with 440 ns reverse recovery time (T_J = 25 °C) and 8.2 µC Q_rr, critical for ZVS/ZCS resonant topologies.

Key Specifications

Pinout & Package

STFW40N60M2 is housed in a TO-3PF metal-can package with isolated tab (pin 1 = Gate, pin 2 = Drain, pin 3 = Source), providing 3.5 kV RMS insulation between leads and heat sink, and 2.0 °C/W junction-to-case thermal resistance for efficient heat transfer in high-power mounting configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF40N60M2, STFW40N60M2 offers superior thermal performance and reinforced isolation for safety-critical systems, while IXFH40N60P3 trades ruggedness for higher current rating but demands additional protection circuitry.

Availability

STFW40N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for STFW40N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability hard-switched and resonant power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFW40N60M2 supports 22 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10342 Rev 3. This derating reflects thermal limitations of the TO-3PF package and ensures safe operation within the SOA boundary at elevated ambient temperatures typical in enclosed power cabinets.

Does the device include integrated gate protection?

Yes - STFW40N60M2 integrates a Zener diode between gate and source, clamping transient overvoltage to ±25 V. This eliminates the need for external gate protection components in most industrial applications, reducing BOM count and PCB area while enhancing system-level ESD and surge immunity.

How does the C_oss profile affect switching loss in PFC applications?

With a low and voltage-stable C_oss of 117 pF, STFW40N60M2 minimizes turn-off energy loss (E_off ≈ ½ × C_oss × V_DS²), especially critical in continuous conduction mode (CCM) boost PFC where V_DS swings fully from 0 to 400 V. This directly improves efficiency by 0.3–0.5% compared to older superjunction MOSFETs with higher C_oss drift.

Can STFW40N60M2 replace STF40N60M2 in existing designs?

Electrically identical, but mechanical and thermal differences require redesign: STFW40N60M2 uses TO-3PF (isolated tab, 2.0 °C/W R_thJC) versus TO-220FP (non-isolated, 3.13 °C/W). Mounting, heatsinking, and safety clearance must be revalidated - especially insulation distance and creepage for reinforced isolation compliance.