STMicroelectronics STFW42N60M2-EP

Overview

STFW42N60M2-EP from STMicroelectronics is an N-channel 600 V, 76 mΩ typ. (87 mΩ max.), 34 A MDmesh™ M2 Power MOSFET in TO-220FP package, engineered for ultra-high-frequency switching converters (>150 kHz). It delivers extremely low gate charge (55 nC), optimized COSS profile (112 pF), and very low turn-off energy (13–14.5 µJ), enabling high-efficiency SMPS and resonant LLC topologies.

For engineers reviewing the STFW42N60M2-EP datasheet, STFW42N60M2-EP pinout, STFW42N60M2-EP application, or STFW42N60M2-EP equivalent, key selection criteria include its 150 °C max junction temperature, 2.5 kV insulation withstand voltage, avalanche-rated ruggedness (800 mJ EAS), Zener-protected gate, and TO-220FP thermally enhanced footprint for high-power density designs.

Technical Context

This device employs ST's MDmesh M2 EP (Enhanced Performance) silicon process with strip layout and refined vertical structure to simultaneously reduce RDS(on) and output capacitance while maintaining robust dv/dt ruggedness (50 V/ns). Its low Crss (2.5 pF) and Coss eq. (454 pF) enable fast, low-loss switching under hard-switching and zero-voltage transition conditions.

The integrated Zener-protected gate ensures ±25 V VGS tolerance, while the source-drain diode exhibits low forward voltage (1.6 V at 34 A) and controlled reverse recovery (Qrr = 9–12 µC, trr = 438–538 ns), minimizing commutation losses in bridge configurations.

Key Specifications

Pinout & Package

Package: TO-220FP type B - Full-molded, insulated flange variant with 2.5 kV isolation rating and optimized thermal path to heatsink via metal tab. Flange is electrically connected to drain (D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-frequency power switching applications.

Compared with STW42N60M2 and IXFH42N60P, the STFW42N60M2-EP uniquely combines TO-220FP insulation, Zener gate protection, and lowest Eoff in its class-making it optimal for space-constrained, high-reliability, high-frequency converters where assembly simplicity and safety compliance are critical.

Availability

STFW42N60M2-EP is available at Aetrix Electronics and suitable for high-frequency LLC resonant converters, industrial PFC stages, and EV onboard charger primary switches requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STFW42N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 EP high-voltage power MOSFET product line, specifically developed for ultra-high-frequency, high-efficiency switching power supplies-including server PSUs, solar inverters, and EV charging systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFW42N60M2-EP supports 22 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS10814 Rev 3. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature under sustained load.

Does this MOSFET include integrated gate protection?

Yes-the STFW42N60M2-EP integrates a Zener diode between gate and source, providing ±25 V VGS clamping. This eliminates the need for external gate protection components in most industrial and telecom applications, as confirmed in the "Features" section and absolute maximum ratings table.

Can it be used in avalanche-mode operation?

Yes-every unit undergoes 100% unclamped inductive switching (UIS) testing. It guarantees 800 mJ single-pulse avalanche energy (EAS) at TJ = 25 °C, validated per test circuit Figure 17 and Table 3 in DS10814 Rev 3, making it suitable for circuits with potential inductive energy spikes.

How does its Coss eq. differ from standard Coss, and why does it matter?

Coss eq. (454 pF) is the constant-equivalent capacitance that replicates the actual Coss time-dependent behavior during VDS ramp from 0 to 480 V. Unlike static Coss (112 pF), Coss eq. directly determines turn-off energy and ZVS feasibility-critical for optimizing resonant converter design and efficiency above 150 kHz.