STMicroelectronics STFW45N65M5

Overview

STFW45N65M5 from STMicroelectronics is an N-channel 650 V, 35 A power MOSFET in TO-247 package, featuring 68 mΩ typical R_DS(on), 15 V/ns diode dv/dt capability, and 50 V/ns MOSFET dv/dt ruggedness. It employs MDmesh M5 vertical process technology for ultra-low conduction loss and high-efficiency operation in high-voltage switching converters.

For engineers reviewing the STFW45N65M5 datasheet, STFW45N65M5 pinout, STFW45N65M5 application, or STFW45N65M5 equivalent, key selection criteria include avalanche energy rating (810 mJ), gate charge (82 nC), junction-to-case thermal resistance (0.6 °C/W), and unclamped inductive switching robustness.

Technical Context

This device integrates ST's MDmesh M5 silicon architecture-optimized for high-voltage hard-switching topologies-with PowerMESH horizontal layout to minimize both R_DS(on) and output capacitance (C_oss = 82 pF typ.). Its 150 °C maximum junction temperature and 100% avalanche-tested construction support continuous operation under transient overvoltage stress.

The MOSFET delivers fast switching with t_d(v) = 79.5 ns and t_f(i) = 9.3 ns at V_DD = 400 V, ID = 23 A, and R_G = 4.7 Ω, while maintaining low E_on/E_off energy across gate resistance range (1–40 Ω). Its body diode exhibits t_rr = 392 ns and Q_rr = 7.4 µC at 25 °C, enabling reliable synchronous rectification in PFC stages.

Key Specifications

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole configuration with standard lead spacing and 14.5 mm minimum creepage distance. Mounting hole ØP = 3.6 mm; case height L = 14.5 mm; thermal pad area ≈ 100 mm².

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH45N65X2 and IPP65R099C7, STFW45N65M5 uniquely combines 650 V rating, sub-80 mΩ R_DS(on), and verified 50 V/ns dv/dt ruggedness-making it optimal for mission-critical industrial and renewable energy systems demanding both efficiency and reliability.

Availability

STFW45N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, server power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STFW45N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V industrial and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFW45N65M5 supports 22 A continuous drain current at T_C = 100 °C, as defined in Table 1 of DS9412 Rev 3. This rating reflects thermal derating due to junction-to-case resistance (0.6 °C/W) and safe operating area constraints-not just package limits. Operation above this current requires forced-air cooling or reduced duty cycle to maintain T_J ≤ 150 °C.

Does this MOSFET have an integrated body diode, and what are its key recovery parameters?

Yes, STFW45N65M5 includes a monolithic source-drain body diode rated for 35 A continuous and 140 A pulsed current. At 25 °C, its reverse recovery time (t_rr) is 392 ns with Q_rr = 7.4 µC and I_RRM = 38 A under standard test conditions (I_SD = 35 A, di/dt = 100 A/µs, V_DD = 100 V). These values increase slightly at 150 °C (t_rr = 468 ns, Q_rr = 9.7 µC).

Can STFW45N65M5 replace STW45N65M5 in existing designs?

Yes-STFW45N65M5 is a direct replacement for STW45N65M5, sharing identical electrical specifications, pinout, package (TO-247), and thermal characteristics. The "F" suffix denotes updated manufacturing flow per DS9412 Rev 3 (Nov 2025), which removed legacy order codes but retained full functional and mechanical compatibility. No layout or drive circuit changes are required.

What is the recommended gate resistor value for hard-switching at 100 kHz?

For hard-switching at 100 kHz with V_GS = 0–10 V, a 4.7 Ω gate resistor is validated in the datasheet (Table 6 test conditions) and balances switching speed (t_d(v) = 79.5 ns) against overshoot and EMI. Lower values (≤2.2 Ω) reduce losses but risk ringing; higher values (≥10 Ω) suppress oscillation but increase E_on/E_off by >35%. Layout-dependent parasitics require empirical tuning.