STMicroelectronics STFW69N65M5

Overview

STFW69N65M5 from STMicroelectronics is an N-channel 650 V, 58 A Power MOSFET based on MDmesh M5 vertical process technology in TO-3PF package, featuring 37 mΩ typ. R_DS(on), 15 V/ns dv/dt capability, and 100% avalanche tested. It delivers high-efficiency switching for industrial SMPS, PFC stages, and solar inverters operating at elevated voltage and thermal stress.

For engineers reviewing the STFW69N65M5 datasheet, STFW69N65M5 pinout, STFW69N65M5 application, or STFW69N65M5 equivalent, this device is selected for high-voltage hard-switched topologies requiring low conduction loss, robust diode recovery, and proven unclamped inductive switching reliability.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture to achieve ultra-low R_DS(on) × area trade-off while maintaining 650 V breakdown rating and high dv/dt immunity (15 V/ns). Its optimized charge profile-Q_g = 143 nC, Q_gd/Q_gs = 1.68-enables fast, controllable turn-on/turn-off with reduced Miller-induced oscillation risk.

The integrated body diode exhibits t_rr = 480 ns and Q_rr = 11 µC at 25 °C (rising to 16 µC at 150 °C), supporting ZVS-capable resonant converters and minimizing commutation losses in bridge-leg configurations without external SiC diodes.

Key Specifications

Pinout & Package

STFW69N65M5 uses the TO-3PF (Type A) metal-can package with isolated tab. The case serves as the Drain terminal, enabling low-inductance high-current connections and direct thermal coupling to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW69N65M5 and IXFH60N65X2, STFW69N65M5 uniquely combines certified avalanche ruggedness, 3.5 kV isolation, and TO-3PF mechanical stability-making it the default choice for mission-critical industrial power conversion where reliability trumps marginal thermal gain.

Availability

STFW69N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic inverters, and uninterruptible power systems requiring stable component supply and long-term manufacturability assurance.

Supply support for STFW69N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh M5 high-voltage Power MOSFET product line, engineered specifically for efficiency-critical 600–650 V switching applications in server PSUs, solar inverters, and EV infrastructure where low R_DS(on) and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STFW69N65M5 supports 36.5 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS8936 Rev 3. This value reflects thermal derating due to junction-to-case resistance (1.58 °C/W) and maximum junction temperature limit of 150 °C, making it suitable for forced-air-cooled industrial power modules.

Does STFW69N65M5 include an integrated body diode, and what are its key recovery characteristics?

Yes, STFW69N65M5 features an integrated source-drain body diode rated for 58 A continuous and 232 A pulsed current. At 25 °C, its reverse recovery time is 480 ns with 11 µC recovered charge and 46 A peak reverse current under standard test conditions (ISD = 58 A, di/dt = 100 A/µs, VDD = 100 V), enabling use in hard-switched bridge configurations without external diode supplementation.

How does the TO-3PF package provide electrical isolation, and what is its rated withstand voltage?

The TO-3PF package provides galvanic isolation between all three leads (G, S, D) and the external heatsink via molded plastic body and internal insulation layers. Its rated insulation withstand voltage is 3.5 kV RMS for 1 second at 25 °C, verified per IEC 60747-5-2, allowing safe deployment in medical-grade and high-isolation industrial power supplies without additional barrier materials.

Is STFW69N65M5 suitable for use in zero-voltage switching (ZVS) topologies, and why?

Yes-its low Q_gd (64 nC), low C_oss (170 pF), and soft-recovery body diode (Q_rr = 11 µC, t_rr = 480 ns) enable reliable ZVS operation in phase-shifted full-bridge and LLC resonant converters. The 15 V/ns dv/dt immunity further ensures robust turn-on timing control during resonant transitions, reducing voltage overshoot and EMI generation.