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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH10N80K5-2AG

Name: STH10N80K5-2AG
Brand: STMicroelectronics
SKU: STH10N80K5-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH10N80K5-2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH10N80K5-2AG.pdf

Description:: MOSFET N-CH 800V 8A H2PAK-2

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Product details

Overview

STH10N80K5-2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 800 V, 0.68 Ω max, 8 A power MOSFET in H²PAK-2 package, featuring ultra-low gate charge (17.3 nC), 100% avalanche tested, and optimized for high-voltage switching in automotive on-board chargers and industrial SMPS.

For engineers reviewing the STH10N80K5-2AG datasheet, STH10N80K5-2AG pinout, STH10N80K5-2AG application, or STH10N80K5-2AG equivalent, key selection criteria include R_DS(on) stability over temperature, dv/dt ruggedness (50 V/ns), single-pulse avalanche energy (250 mJ), and MDmesh K5 technology's FoM advantage in high-density power conversion.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical structure to achieve a figure of merit (R_DS(on) × Q_g) of 11.77 Ω·nC, enabling high-efficiency operation at 400–720 V bus voltages. Its 1.03 °C/W junction-to-case thermal resistance supports high-power density layouts with minimal heatsinking.

The MOSFET integrates a robust body diode with 436 ns reverse recovery time (T_J = 25 °C) and 3.97 µC Q_rr, validated under 100 A/µs di/dt and 60 V V_DD. Gate threshold voltage (3–5 V) and ±30 V V_GS rating ensure compatibility with standard 10 V gate drivers in isolated flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC bus voltages up to 640 V continuously with full dv/dt ruggedness margin.
R_DS(on) max	0.68 Ω @ V_GS = 10 V, I_D = 4 A - Enables <1.1 W conduction loss at 8 A, critical for thermally constrained automotive modules.
Q_g	17.3 nC - Reduces gate drive power and switching transition time, lowering E_ON/E_OFF in hard-switched PFC stages.
E_AS	250 mJ - Supports unclamped inductive switching without failure, essential for relay driving and solenoid control.
R_thJC	1.03 °C/W - Allows 121 W dissipation at T_C = 25 °C; enables compact heatsink design in space-limited EV auxiliary supplies.
dv/dt ruggedness	50 V/ns - Immune to parasitic turn-on during fast voltage transients in high-side configurations.
I_D (T_C = 100 °C)	5 A - Specifies usable current derating for continuous operation in under-hood environments.

Pinout & Package

H²PAK-2 is a surface-mount, thermally enhanced package with exposed drain tab for low-inductance, high-current PCB mounting. The metal tab (Pin 1) serves as the drain connection and primary thermal path to the PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Pin 1)	Drain (D)	Primary high-current output and thermal interface; must be soldered to ≥1 in² 2-oz copper for rated R_thJA.
Pin 2	Source (S)	Low-side return path; electrically tied to Pin 3; forms Kelvin source connection for accurate current sensing.
Pin 3	Source (S)	Parallel source terminal for reduced loop inductance and improved switching stability in high-di/dt applications.
Pin 4	Gate (G)	Control input with 7 Ω intrinsic gate resistance; requires <10 Ω external series resistor to damp ringing in 720 V switching.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per stress test conditions.
MDmesh K5 vertical architecture	Delivers 20% lower R_DS(on) × Q_g than prior-generation K3/K4, directly improving efficiency in 100–300 kHz SMPS.
100% avalanche tested	Each unit undergoes unclamped inductive switching stress at I_AR = 2.7 A, ensuring field reliability in fault-prone motor drives.
Ultra-low C_oss (41 pF)	Minimizes capacitive turn-off losses and improves ZVS capability in LLC resonant converters operating above 200 kHz.
High dv/dt immunity (50 V/ns)	Prevents false triggering during fast-rising edge transitions in half-bridge high-side switch positions.

Applications

On-Board Charger (OBC) PFC Stage

Industrial 3 kW SMPS

Use Scenario: Boost PFC converter operating at 65–100 kHz with 400 V DC-link in EV charging systems.

IC Role / Device Role / Timing Role: High-voltage switching element handling 8 A RMS input current with synchronous rectification timing constraints.

Use Value: 0.68 Ω R_DS(on) limits conduction loss to ≤0.9 W at full load, while 17.3 nC Q_g enables clean 10 V gate drive with <20 ns switching transitions.

Use Scenario: Primary-side switch in telecom-grade 48 V output, 3 kW forward converter with active clamp.

IC Role / Device Role / Timing Role: Main power switch managing 720 V transient spikes during clamp reset cycles.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during clamp voltage reversal; 250 mJ E_AS absorbs clamp energy without snubber.

Automotive DC-DC Converter

Solar Microinverter Half-Bridge

Use Scenario: 12 V to 48 V bi-directional DC-DC stage in 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology requiring fast body diode recovery.

Use Value: 436 ns t_rr and 3.97 µC Q_rr minimize reverse recovery loss and EMI during light-load discontinuous conduction mode.

Use Scenario: High-side switch in microinverter half-bridge converting 600 V PV string voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage switching node with strict isolation and transient overvoltage tolerance.

Use Value: 800 V V_(BR)DSS provides 20% margin over 600 V PV open-circuit voltage; H²PAK-2 package enables direct heatsink mounting on aluminum chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH10N80L	R_DS(on) = 0.75 Ω max; Q_g = 22 nC; no AEC-Q101 qualification	Higher conduction and switching loss; unsuitable for automotive temperature cycling	Select only for non-automotive industrial SMPS where qualification is not required.
IPP60R190C7	R_DS(on) = 0.19 Ω typ at 600 V; incompatible voltage rating (600 V vs 800 V)	Cannot withstand 720 V transients; fails safe operating area in 400 V+ bus applications	Reject for any design requiring >650 V blocking; only viable in lower-voltage 3-phase inverters.

Compared with IXTH10N80L and IPP60R190C7, STH10N80K5-2AG uniquely combines AEC-Q101 compliance, 800 V rating, and sub-0.7 Ω R_DS(on)-making it the sole option for automotive OBCs and industrial 720 V clamped converters requiring both reliability and efficiency.

Availability

STH10N80K5-2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial 3 kW SMPS, and solar microinverters requiring stable component supply across extended product lifecycles.

Supply support for STH10N80K5-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage power MOSFET family, engineered specifically for high-efficiency, high-power-density switching in automotive traction auxiliary systems and industrial off-line power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH10N80K5-2AG supports 5 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS13355. This derating reflects thermal limitations of the H²PAK-2 package and ensures safe operation within the SOA boundary at elevated ambient conditions.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 436 ns reverse recovery time and 3.97 µC Q_rr at 25 °C, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and clamping, not zero-voltage switching in SR topologies.

Can this MOSFET replace older MDmesh K3 devices in existing designs?

Yes-STH10N80K5-2AG is pin-compatible with STH10N80K3-2AG and offers lower R_DS(on) (0.60 Ω typ vs 0.75 Ω typ) and reduced Q_g (17.3 nC vs 21 nC), enabling direct drop-in replacement with measurable efficiency gain in PFC and resonant converters.

What is the recommended gate resistor value for 720 V switching?

ST recommends a 4.7 Ω series gate resistor (as used in Figure 14 test circuit) to balance switching speed and ringing suppression. Lower values (<3.3 Ω) risk overshoot due to 7 Ω intrinsic R_g and PCB layout inductance; higher values (>10 Ω) increase E_ON/E_OFF disproportionately.

STH10N80K5-2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 680mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 17.3 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 426 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 121W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2Pak-2

STH10N80K5-2AG FAQ

1.How can I place an order for STH10N80K5-2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STH10N80K5-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH10N80K5-2AG reliable?

The price and inventory of STH10N80K5-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH10N80K5-2AG is usually 5 days.

3.What payment methods are accepted for STH10N80K5-2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH10N80K5-2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH10N80K5-2AG?

STH10N80K5-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH10N80K5-2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH10N80K5-2AG?

For technical support, including STH10N80K5-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH10N80K5-2AG requirements.

6.How does Aetrix verify that STH10N80K5-2AG is sourced from the original manufacturer or authorized distributors?

All STH10N80K5-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH10N80K5-2AG meets industry standards.

7.What is the process for return or replacement of STH10N80K5-2AG?

All STH10N80K5-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH10N80K5-2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH10N80K5-2AG part is unused and in its original packaging.

Return procedure for STH10N80K5-2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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