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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH110N10F7-2

Name: STH110N10F7-2
Brand: STMicroelectronics
SKU: STH110N10F7-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH110N10F7-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH110N10F7-2.pdf

Description:: MOSFET N CH 100V 110A H2PAK

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Product details

Overview

STH110N10F7-2 from STMicroelectronics is an N-channel 100 V, 4.9 mΩ typ. R_DS(on), 110 A continuous drain current Power MOSFET in H²PAK-2 package, utilizing STripFET™ F7 trench technology for ultra-low conduction loss and fast switching. It delivers 150 W total power dissipation at T_C = 25 °C and supports high-current DC/DC converters, motor drives, and industrial power supplies.

For engineers reviewing the STH110N10F7-2 datasheet, STH110N10F7-2 pinout, STH110N10F7-2 application, or STH110N10F7-2 equivalent, key selection criteria include its 6.5 mΩ max R_DS(on), 72 nC total gate charge, 1 °C/W junction-to-case thermal resistance, and H²PAK-2 footprint compatibility with high-power PCB layouts.

Technical Context

This device implements an enhanced trench-gate STripFET™ F7 structure that simultaneously reduces R_DS(on) and internal capacitances-C_iss = 5117 pF, C_oss = 992 pF, C_rss = 39 pF-enabling high-efficiency hard-switching up to 100 kHz. Its low C_rss/C_iss ratio improves EMI immunity in noisy industrial environments.

The MOSFET features robust unclamped inductive switching capability (E_AS = 490 mJ), a 175 °C maximum junction temperature, and avalanche-rated operation-critical for overvoltage transients in motor control and UPS systems where fault energy must be safely absorbed without failure.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V and 60 V bus systems with 20 % derating margin for transient spikes.
R_DS(on) max	6.5 mΩ - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in high-current inverters.
I_D cont @ T_C=25°C	110 A - Rated for continuous operation with direct case cooling, suitable for high-power synchronous rectifiers.
Q_g	72 nC - Determines gate driver strength requirement; compatible with standard 2 A peak drivers for ≤200 kHz switching.
R_thj-case	1 °C/W - Allows precise junction temperature estimation when mounted on copper baseplate, enabling thermal-aware protection algorithms.
E_AS	490 mJ - Withstands single-pulse inductive energy events up to 50 V × 10 A × 1 ms without failure in motor phase-legs.
V_GS(th)	2.5–4.5 V - Ensures reliable turn-on with 5 V logic-level gate drive, eliminating need for level-shifting in microcontroller-based controllers.

Pinout & Package

The STH110N10F7-2 is housed in the H²PAK-2 surface-mount package-a thermally optimized, dual-side-cooled outline with exposed drain tab and isolated source/gate terminals. The package enables >100 A current handling with low-inductance layout and direct thermal path to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Exposed metal tab serves as primary drain terminal and thermal interface; must be soldered to large copper pour or heatsink.
Pin 1 (Source)	Source node	Low-inductance source connection for Kelvin sensing or gate drive return; electrically isolated from tab.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; routed away from power traces to prevent coupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ typ. at V_GS = 10 V enables >98 % efficiency in 48 V/100 A DC/DC stages.
Low C_rss/C_iss ratio	39/5117 ≈ 0.76 % - Reduces Miller-induced shoot-through risk and simplifies gate drive design in half-bridge topologies.
High avalanche ruggedness	490 mJ single-pulse rating - Eliminates external snubbers in brushed DC motor H-bridges during commutation spikes.
Enhanced thermal performance	1 °C/W R_thj-case - Supports 110 A operation with <100 °C junction rise above 25 °C case, enabling compact thermal design.

Applications

Motor Drive Inverter Stage

High-Efficiency DC/DC Converter

Use Scenario: High-current BLDC motor phase-leg switching in industrial automation drives operating at 48 V bus voltage.

IC Role / Device Role / Timing Role: Main power switch in 3-phase inverter leg; handles 110 A peak current with <100 ns switching transitions.

Use Value: Low R_DS(on) and 72 nC Q_g reduce conduction + switching losses by 22 % vs. prior-generation F6 MOSFETs, extending thermal margin at 10 kHz PWM.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V, 1.2 kW telecom DC/DC module.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology; operates at 200 kHz with zero-voltage switching assist.

Use Value: 39 pF C_rss minimizes voltage-dependent gate drive loss, improving light-load efficiency by 1.8 % at 5 % load.

Uninterruptible Power Supply (UPS)

Industrial Battery Management System

Use Scenario: Bidirectional DC bus switch in 3 kVA online UPS output stage, handling 100 A continuous and 430 A pulsed loads.

IC Role / Device Role / Timing Role: Output stage MOSFET subjected to repetitive unclamped inductive switching during transfer events.

Use Value: 490 mJ E_AS rating ensures reliable operation during 10 ms grid-fail transitions without external clamping diodes.

Use Scenario: High-side main disconnect switch in 60 V lithium-iron-phosphate battery pack for material handling equipment.

IC Role / Device Role / Timing Role: Solid-state contactor replacing mechanical relays; controlled via isolated gate driver for fast fault isolation.

Use Value: 175 °C T_J(max) and -55 °C T_stg support operation across -40 °C to +85 °C ambient with full SOA coverage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH110N10P	R_DS(on) = 7.2 mΩ max; Q_g = 85 nC; TO-247 package	Higher thermal resistance (0.45 °C/W case-to-sink but no integrated PCB thermal path); requires mechanical mounting.	Preferred where discrete heatsink mounting is standard and board space allows TO-247 footprint.
IRFP110N10LPbF	R_DS(on) = 7.5 mΩ max; C_rss = 55 pF; TO-220 package	Lower avalanche rating (E_AS = 220 mJ); no H²PAK thermal optimization for high-current PCB routing.	Selected for cost-sensitive, lower-reliability consumer-grade inverters where 100 A peak is not sustained.

Compared with IXFH110N10P and IRFP110N10LPbF, the STH110N10F7-2 offers superior thermal integration via H²PAK-2, lower switching losses due to reduced C_rss, and higher avalanche survivability-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

STH110N10F7-2 is available at Aetrix Electronics and suitable for high-current motor drives, uninterruptible power supplies, and high-efficiency DC/DC converters requiring stable component supply and long-term production continuity.

Supply support for STH110N10F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion systems demanding ultra-low R_DS(on), fast switching, and rugged avalanche performance-especially in server PSUs, EV chargers, and industrial motor controls.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH110N10F7-2 supports 76 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is derived from thermal limits using R_thj-case = 1 °C/W and maximum junction temperature of 175 °C, ensuring safe operation under sustained high-temperature conditions in enclosed enclosures.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The STH110N10F7-2 has a ±20 V gate-source voltage rating and is fully specified for 0 V turn-off. Its V_GS(th) range (2.5–4.5 V) ensures clean turn-off at 0 V gate bias, and no negative gate drive is needed-simplifying gate driver design in isolated half-bridge configurations.

Can the H²PAK-2 package be hand-soldered or reworked?

H²PAK-2 is designed for automated reflow soldering with profiled thermal mass management. Hand-soldering is not recommended due to its large exposed drain tab and thermal asymmetry; rework requires specialized hot-air stations with preheating (>120 °C PCB base) and precise nozzle control to avoid delamination or solder voiding.

How does the source-drain diode performance compare to external Schottky solutions?

The integrated body diode has V_SD = 1.2 V at 55 A and t_rr = 77 ns at 150 °C, offering lower forward drop than most 100 V Si Schottkys but slower recovery than SiC alternatives. It is suitable for synchronous rectification in non-resonant topologies but not recommended for ZVS/ZCS circuits requiring sub-30 ns recovery.

STH110N10F7-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5117 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH110N10F7-2 FAQ

1.How can I place an order for STH110N10F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH110N10F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH110N10F7-2 reliable?

The price and inventory of STH110N10F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH110N10F7-2 is usually 5 days.

3.What payment methods are accepted for STH110N10F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH110N10F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH110N10F7-2?

STH110N10F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH110N10F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH110N10F7-2?

For technical support, including STH110N10F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH110N10F7-2 requirements.

6.How does Aetrix verify that STH110N10F7-2 is sourced from the original manufacturer or authorized distributors?

All STH110N10F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH110N10F7-2 meets industry standards.

7.What is the process for return or replacement of STH110N10F7-2?

All STH110N10F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH110N10F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH110N10F7-2 part is unused and in its original packaging.

Return procedure for STH110N10F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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