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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH110N10F7-6

Name: STH110N10F7-6
Brand: STMicroelectronics
SKU: STH110N10F7-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH110N10F7-6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: STH110N10F7-6.pdf

Description:: MOSFET N-CH 100V 110A H2PAK-6

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Product details

Overview

STH110N10F7-6 from STMicroelectronics is an N-channel 100 V, 4.9 mΩ typ. R_DS(on), 110 A continuous drain current (T_C = 25 °C), 150 W power MOSFET in H²PAK-6 package, leveraging STripFET™ F7 trench technology for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STH110N10F7-6 datasheet, STH110N10F7-6 pinout, STH110N10F7-6 application, or STH110N10F7-6 equivalent, key selection criteria include its 1 °C/W junction-to-case thermal resistance, low 39 pF Crss/Ciss ratio for EMI immunity, high 490 mJ single-pulse avalanche energy, and H²PAK-6 terminal layout optimized for PCB thermal management.

Technical Context

This device implements an enhanced trench-gate STripFET™ F7 structure that simultaneously reduces R_DS(on) to 4.9 mΩ (typ.) at V_GS = 10 V and minimizes gate charge (Q_g = 72 nC) and reverse transfer capacitance (Crss = 39 pF), enabling fast, low-loss switching in hard-switched topologies.

Its robust safe operating area supports 430 A pulsed drain current and 490 mJ unclamped inductive avalanche energy at T_J = 25 °C, while the source-drain diode delivers 110 A continuous conduction with 1.2 V forward voltage at 55 A and exhibits 77 ns reverse recovery time under high-di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V industrial bus and 80 V automotive subsystems.
R_DS(on) max	6.5 mΩ - Guarantees ≤6.5 mΩ on-resistance at V_GS = 10 V and I_D = 55 A, ensuring <1.2 W conduction loss at 55 A.
I_D (cont)	110 A @ T_C = 25 °C - Supports high-current output stages when mounted on heatsink; derates to 76 A at T_C = 100 °C.
Q_g	72 nC - Total gate charge enables efficient gate drive design with standard 1–2 A drivers and predictable 25 ns turn-on delay.
E_AS	490 mJ - Single-pulse avalanche ruggedness allows reliable operation during inductive load switching without external snubbers.
R_thj-case	1 °C/W - Enables direct thermal coupling to heatsink; achieves T_J = 125 °C at P_TOT = 100 W with 100 °C case temperature.
C_rss/C_iss ratio	39/5117 pF - Low 0.76% Crss/Ciss ratio suppresses Miller-induced shoot-through and improves EMI performance in high-frequency SMPS.

Pinout & Package

H²PAK-6 is a thermally enhanced surface-mount package with 7 terminals: 6 parallel source pins (S) and 1 drain tab (D) on the bottom side, designed for low-inductance, high-current PCB routing and direct heatsink mounting via the exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,5,6	Source (S)	Six paralleled source terminals reduce source inductance and improve current sharing; each rated for ≥18 A continuous per trace path.
7	Drain (D)	Exposed copper drain tab on underside serves as primary heat path and high-current return; requires solder paste stencil optimization for full thermal contact.

Key Features

Feature	Design Value
STripFET™ F7 trench architecture	Enables 4.9 mΩ R_DS(on) at 100 V rating-among lowest on-market for comparable voltage class-reducing conduction losses by >15% vs prior-generation F6 devices.
Low Crss/Ciss ratio	39 pF / 5117 pF = 0.76% - Minimizes Miller plateau duration and dv/dt-induced false turn-on, critical for 300–500 kHz LLC resonant converters.
High avalanche ruggedness	490 mJ single-pulse E_AS - Eliminates need for external clamping in 48 V BLDC motor phase-legs and UPS inverter half-bridges.
Optimized for PCB thermal dissipation	R_thj-pcb = 35 °C/W on 1 in² 2 oz Cu - Enables 110 A operation without external heatsink in space-constrained 12 V–48 V telecom rectifiers.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: High-current 3-phase inverter stage in 48 V brushless DC motor controllers for industrial automation.

IC Role / Device Role / Timing Role: High-side and low-side N-channel switch in synchronous buck-derived inverter topology, switching at 20–40 kHz.

Use Value: 4.9 mΩ R_DS(on) and 72 nC Q_g enable >98.5% efficiency at 50 A RMS; 490 mJ E_AS withstands regenerative braking transients.

Use Scenario: Primary-side switching transistor in 80+ Titanium-certified 1.5 kW server power supply LLC resonant converter.

IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration, operating at 300–400 kHz with ZVS.

Use Value: Low Crss (39 pF) ensures stable ZVS across line/load; 1 °C/W R_thj-case supports forced-air cooling without baseplate.

Telecom Rectifier Module

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Output synchronous rectification in 48 V telecom rectifier modules with distributed power architecture.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in isolated forward or active clamp forward topology.

Use Value: 110 A continuous rating and 1.2 V V_SD support >96% rectifier efficiency at full load; H²PAK-6 footprint simplifies double-sided PCB layout.

Use Scenario: Bidirectional DC-DC stage in 48 V lithium-ion battery energy storage systems for grid-tied inverters.

IC Role / Device Role / Timing Role: High-current bidirectional switch in dual-active-bridge (DAB) topology, conducting up to 100 A in both directions.

Use Value: Robust body diode (77 ns t_rr, 150 nC Q_rr) enables zero-voltage switching in reverse direction; 175 °C T_Jmax supports wide ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH110N10P	R_DS(on) = 7.2 mΩ (max), Q_g = 85 nC, Crss = 45 pF, TO-247 package	Higher thermal resistance (R_thj-case = 0.55 °C/W but requires mechanical heatsink mounting)	Preferred where legacy TO-247 socketing or higher peak pulse current (>500 A) is required; less optimal for ultra-thin PCB designs.
IRFP110N10LPbF	R_DS(on) = 6.8 mΩ (max), Q_g = 92 nC, Crss = 52 pF, TO-220 package	Lower avalanche rating (E_AS = 290 mJ), no H²PAK thermal pad integration	Better cost fit for non-avalanche-critical 48 V DC-DC converters; unsuitable for motor drive regeneration or unclamped inductive loads.

Compared with IXFH110N10P and IRFP110N10LPbF, STH110N10F7-6 delivers superior FoM (R_DS(on) × Q_g = 461 Ω·nC), lower EMI sensitivity due to Crss/Ciss ratio, and integrated PCB thermal path-making it optimal for high-density, high-reliability 48–80 V power stages.

Availability

STH110N10F7-6 is available at Aetrix Electronics and suitable for motor drive inverters, server power supply primary switches, telecom rectifier modules, and energy storage system bi-directional converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STH110N10F7-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48–100 V industrial and telecom power systems where low conduction loss, fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for STH110N10F7-6 at 100 °C case temperature?

The maximum continuous drain current is 76 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (1 in², 2 oz Cu) and accounts for thermal derating from the 110 A value at 25 °C case temperature.

Does STH110N10F7-6 require a negative gate drive voltage for reliable turn-off?

No. The device specifies ±20 V gate-source voltage rating, but standard 0 V to +10 V or +12 V gate drive is sufficient for full enhancement and reliable turn-off. Negative gate bias is not required due to its 2.5–4.5 V gate threshold voltage and low gate leakage (<100 nA at V_GS = 20 V).

Can STH110N10F7-6 be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10 of the datasheet) ensures inherent current balancing. Parallel operation is supported with matched gate drive layout and symmetrical PCB thermal paths; no external source resistors are needed for stable sharing at up to 220 A total.

What is the recommended minimum solder paste aperture size for the H²PAK-6 drain tab?

Per ST's application note AN4642, the recommended stencil aperture for the drain tab is 90–95% of the pad area (≈10.2 mm × 7.6 mm), using 125 µm thick stainless steel stencil with electroformed walls to ensure ≥80% solder volume and void-free thermal interface to the PCB ground plane.

STH110N10F7-6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5117 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-6

STH110N10F7-6 FAQ

1.How can I place an order for STH110N10F7-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH110N10F7-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH110N10F7-6 reliable?

The price and inventory of STH110N10F7-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH110N10F7-6 is usually 5 days.

3.What payment methods are accepted for STH110N10F7-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH110N10F7-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH110N10F7-6?

STH110N10F7-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH110N10F7-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH110N10F7-6?

For technical support, including STH110N10F7-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH110N10F7-6 requirements.

6.How does Aetrix verify that STH110N10F7-6 is sourced from the original manufacturer or authorized distributors?

All STH110N10F7-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH110N10F7-6 meets industry standards.

7.What is the process for return or replacement of STH110N10F7-6?

All STH110N10F7-6 units undergo pre-shipment inspection (PSI). If there is an issue with STH110N10F7-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH110N10F7-6 part is unused and in its original packaging.

Return procedure for STH110N10F7-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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