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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH12N120K5-2

Name: STH12N120K5-2
Brand: STMicroelectronics
SKU: STH12N120K5-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH12N120K5-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH12N120K5-2.pdf

Description:: MOSFET N-CH 1200V 12A H2PAK-2

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Product details

Overview

STH12N120K5-2 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, designed for primary-side switching in 1200 V hard-switched and resonant topologies. It delivers 12 A continuous drain current at T_C = 25 °C, 620 mΩ typical R_DS(on), 44.2 nC total gate charge, and is 100% avalanche tested - enabling robust operation in industrial SMPS, solar inverters, and HV DC-DC converters.

For engineers reviewing the STH12N120K5-2 datasheet, STH12N120K5-2 pinout, STH12N120K5-2 application, or STH12N120K5-2 equivalent, key selection criteria include its 1200 V V_DS, ultra-low Q_g/R_DS(on) FoM, Zener-protected gate, and H²PAK-2 package thermal performance (R_thJC = 0.5 °C/W).

Technical Context

This device employs ST's proprietary vertical MDmesh K5 structure to achieve simultaneous reduction in conduction loss (620 mΩ typ. at V_GS = 10 V) and switching loss (Q_gd = 30 nC, C_oss = 110 pF), supporting high-frequency operation up to 100 kHz in PFC and LLC stages. Its 50 V/ns dv/dt ruggedness and 215 mJ single-pulse avalanche energy ensure reliability under transient overvoltage conditions.

The integrated body diode features 630 ns reverse recovery time (T_J = 25 °C) and 12.6 μC Q_rr, optimized for snubberless operation in flyback and forward converters. Gate threshold voltage is tightly specified at 3–5 V, enabling stable drive with standard 10 V gate drivers without risk of spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports direct rectified 800 V AC line input or 1000 V DC bus without derating.
R_DS(on) max	690 mΩ - enables low conduction loss at 12 A, critical for >96% efficiency in 1–3 kW SMPS.
Q_g	44.2 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers.
I_D cont @ T_C=25°C	12 A - defines maximum continuous output capability with adequate heatsinking.
E_AS	215 mJ - guarantees unclamped inductive switching survival in transformer-coupled topologies.
dv/dt ruggedness	50 V/ns - prevents false turn-on during fast voltage transients in high-di/dt circuits.
R_thJC	0.5 °C/W - enables high power dissipation (250 W) with minimal junction-to-case temperature rise.

Pinout & Package

H²PAK-2 package: surface-mount, thermally enhanced outline with isolated tab (drain-connected), optimized for automated assembly and high-power density PCB layouts. Mechanical footprint per Figure 22 (DS8621 Rev 6, p.10).

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed pad)	Drain (D)	Primary heat path to PCB copper; electrically connected to drain - requires isolation from other potentials.
Pin 1	Gate (G)	Low-impedance control node; 3 Ω intrinsic gate resistance minimizes ringing in high-speed switching.
Pins 2 & 3 (shorted)	Source (S)	Common source connection; dual-pin layout reduces source inductance for improved EMI and switching stability.

Key Features

Feature	Design Value
Ultra-low FoM (Q_g × R_DS(on))	27.4 Ω·nC - enables higher frequency operation while maintaining efficiency in compact form factors.
Zener-protected gate	±30 V V_GS rating with integrated protection - eliminates need for external gate Zener clamps in most designs.
100% avalanche tested	4 A I_AR, 215 mJ E_AS - ensures production-level robustness against inductive energy spikes without screening failure.
Optimized body diode	630 ns t_rr, 12.6 μC Q_rr - reduces switching losses and EMI in discontinuous conduction mode (DCM) applications.
High dv/dt immunity	50 V/ns rated - suppresses parasitic turn-on in high-side configurations with fast-rising V_DS.

Applications

Industrial SMPS

Solar Inverter DC-DC Stage

Use Scenario: Primary-side switch in 2–3 kW telecom rectifiers and industrial AC-DC supplies operating from 3-phase 400 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling 1200 V DC link, driven at 50–100 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 620 mΩ R_DS(on) and 44.2 nC Q_g reduce both conduction and switching losses, enabling >96.5% peak efficiency at full load.

Use Scenario: Boost stage switch in string inverters converting 600–1000 V PV array DC to intermediate bus voltage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing high di/dt during MPPT tracking transients.

Use Value: 50 V/ns dv/dt ruggedness and 215 mJ E_AS prevent failure during lightning-induced surges and rapid irradiance changes.

EV Onboard Charger

High-Voltage UPS

Use Scenario: Isolated DC-DC converter primary switch in bidirectional OBCs interfacing 400/800 V battery systems with AC grid.

IC Role / Device Role / Timing Role: Hard-switched or phase-shifted full-bridge switch operating at 80–120 kHz with synchronous rectification on secondary side.

Use Value: Dual-source pins (Pins 2 & 3) minimize source loop inductance, improving shoot-through immunity and reducing gate oscillation during commutation.

Use Scenario: Static switch and hold-up circuit in 10–20 kVA three-phase UPS systems requiring fail-safe 1200 V isolation.

IC Role / Device Role / Timing Role: High-reliability power switch in battery backup path and bypass topology with redundant control.

Use Value: -55 to 150 °C T_stg/T_J range and 100% avalanche testing support extended field life under thermal cycling and overload stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12N120K5	TO-247 package, R_thJC = 0.5 °C/W same, but higher R_thJA (50 °C/W vs 30 °C/W for H²PAK-2 on FR-4)	Preferred for through-hole prototyping or legacy TO-247 heatsink compatibility; less suitable for high-density SMT layouts	Select when mechanical mounting constraints require through-hole or when existing TO-247 thermal interface is validated
IXTH12N120P	1200 V, 750 mΩ R_DS(on), 52 nC Q_g, no integrated Zener protection, higher E_AS (320 mJ)	Better avalanche margin but higher switching loss; requires external gate clamp and larger gate driver	Choose only if system-level avalanche stress exceeds 215 mJ and board space permits added protection components

Compared with STW12N120K5, STH12N120K5-2 offers superior power density via H²PAK-2 SMT integration and lower gate drive burden; versus IXTH12N120P, it trades marginal avalanche energy for significantly lower Q_g and built-in gate protection - simplifying design and improving manufacturability.

Availability

STH12N120K5-2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STH12N120K5-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STH12N120K5-2 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in 800–1200 V DC systems where low FoM and avalanche robustness are critical.

FAQ

What is the maximum recommended gate drive voltage for STH12N120K5-2?

The absolute maximum gate-source voltage is ±30 V, but the device is characterized and optimized for 10 V gate drive. Operating above 15 V provides negligible R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage damage during transients. ST recommends 10–12 V with active clamping or Zener limiting.

Can STH12N120K5-2 be used in parallel configurations?

Yes, but with strict layout and gate drive matching. The device exhibits positive R_DS(on) temperature coefficient above 100 °C, enabling current sharing. However, dual-source pins must be symmetrically routed, and individual gate resistors (≤4.7 Ω) are required to dampen oscillation. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the H²PAK-2 package lead-free and RoHS compliant?

Yes, STH12N120K5-2 is manufactured in ST's ECOPACK2-compliant H²PAK-2 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "E2" grade marking per ST's environmental compliance documentation, with no exemptions applied.

Does the body diode support synchronous rectification?

No - the integrated body diode is optimized for freewheeling and clamping, not synchronous rectification. Its 1.5 V forward voltage and 630 ns reverse recovery time result in higher conduction and switching losses compared to discrete Schottky or GaN-based synchronous solutions. External synchronous rectifiers are recommended for efficiency-critical secondary-side operation.

STH12N120K5-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 690mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 44.2 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH12N120K5-2 FAQ

1.How can I place an order for STH12N120K5-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH12N120K5-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH12N120K5-2 reliable?

The price and inventory of STH12N120K5-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH12N120K5-2 is usually 5 days.

3.What payment methods are accepted for STH12N120K5-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH12N120K5-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH12N120K5-2?

STH12N120K5-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH12N120K5-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH12N120K5-2?

For technical support, including STH12N120K5-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH12N120K5-2 requirements.

6.How does Aetrix verify that STH12N120K5-2 is sourced from the original manufacturer or authorized distributors?

All STH12N120K5-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH12N120K5-2 meets industry standards.

7.What is the process for return or replacement of STH12N120K5-2?

All STH12N120K5-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH12N120K5-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH12N120K5-2 part is unused and in its original packaging.

Return procedure for STH12N120K5-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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