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STMicroelectronics STH12N120K5-2AG
- Part No.:
- STH12N120K5-2AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STH12N120K5-2AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 1200
- Quantity:
- Payment:
- Shipping:
Inventory:998
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Product details
Overview
STH12N120K5-2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 1200 V power MOSFET in H²PAK-2 package, featuring 1.45 Ω typical RDS(on), 7 A continuous drain current at TC = 25 °C, and ultra-low 36 nC total gate charge. It delivers high-voltage switching for industrial motor drives, EV on-board chargers, and photovoltaic inverters where ruggedness and efficiency are critical.
For engineers reviewing the STH12N120K5-2AG datasheet, STH12N120K5-2AG pinout, STH12N120K5-2AG application, or STH12N120K5-2AG equivalent, key selection criteria include its 1200 V V(BR)DSS, 100% avalanche-tested reliability, 50 V/ns MOSFET dv/dt ruggedness, and MDmesh K5 technology–enabled low FoM for high-power-density designs.
Technical Context
This device uses ST's proprietary MDmesh K5 vertical structure to achieve simultaneous reduction in RDS(on) and Qg, enabling high-efficiency hard-switching topologies. Its 0.47 °C/W RthJC and 150 °C maximum junction temperature support high thermal stress operation in compact heatsink layouts.
The integrated body diode exhibits 390 ns trr and 5.0 µC Qrr at 25 °C, with controlled recovery behavior validated under 100 A/µs di/dt and 60 V VDD. The 1200 mJ EAS (single-pulse, TJ = 25 °C) confirms robust unclamped inductive switching capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 1200 V - Withstands DC bus voltages up to 1200 V without breakdown, suitable for 1000 V-class PV and traction applications. |
| RDS(on) max | 1.9 Ω - Ensures ≤1.9 Ω conduction loss at 3.5 A and 10 V VGS, enabling low I²R heating in high-voltage SMPS. |
| Qg | 36 nC - Reduces gate drive power and switching losses in high-frequency (>50 kHz) converters using standard 10 V gate drivers. |
| ID (cont.) | 7 A at TC = 25 °C - Supports sustained 7 A load current with adequate heatsinking, scalable to 4.6 A at TC = 100 °C. |
| EAS | 1200 mJ - Guarantees safe single-pulse energy absorption during inductive turn-off transients without failure. |
| dv/dt ruggedness | 50 V/ns - Maintains stable operation under fast voltage transients common in SiC/GaN co-designs and snubberless circuits. |
Pinout & Package
H²PAK-2 package: thermally enhanced surface-mount outline with isolated tab (drain), 3-pin configuration (1 = Gate, 2 & 3 = Source, Tab = Drain), optimized for low-inductance PCB layout and direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB | Drain (D) | High-current, high-voltage output node; electrically isolated metal tab enables direct thermal coupling to heatsink without insulating pad. |
| 1 | Gate (G) | Control input requiring ≤10 V drive; 3.5 Ω intrinsic gate resistance limits ringing and simplifies RC snubber design. |
| 2, 3 | Source (S) | Low-side return path shared across two pins to reduce source inductance and improve switching stability in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity testing, and HTOL, enabling use in OBC and DC-DC converters. |
| Ultra-low FoM (RDS(on) × Qg) | ~68.4 Ω·nC - Enables higher power density than prior-generation 1200 V MOSFETs, reducing system size and cost per watt. |
| 100% avalanche tested | Each unit subjected to unclamped inductive switching stress at rated IAR = 2 A and VDD = 50 V, ensuring field robustness. |
| Low Coss & Crss | 85 pF Coss, 0.5 pF Crss - Minimizes capacitive turn-off losses and improves light-load efficiency in resonant topologies. |
Applications
| Industrial Motor Drives | Photovoltaic Inverters |
|---|---|
|
Use Scenario: High-voltage DC link switching in 3-phase IGBT/MOSFET-based VFDs operating at 690–1000 V DC bus. IC Role / Device Role / Timing Role: Main switch in 2-level or 3-level NPC inverter legs, handling 7 A RMS phase current with <57 ns td(off). Use Value: 1.45 Ω RDS(on) reduces conduction loss by ~22% vs. legacy 1200 V MOSFETs, improving full-load efficiency to >98.3%. |
Use Scenario: DC-DC boost stage and DC-AC H-bridge in string inverters with 1000–1200 V PV array inputs. IC Role / Device Role / Timing Role: High-side switch in interleaved boost converters, leveraging 50 V/ns dv/dt ruggedness for snubberless operation. Use Value: 36 nC Qg enables 100 kHz switching with <1.2 W gate drive loss, supporting higher power density and reduced magnetics size. |
| EV On-Board Chargers | High-Voltage SMPS |
|
Use Scenario: Primary-side switching in bidirectional CLLC resonant converters used in 11–22 kW OBCs. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable switch with 1200 mJ EAS tolerance for fault conditions during soft-start or grid transients. Use Value: 150 °C TJ(max) and 0.47 °C/W RthJC allow operation at 110 °C case temperature with 20 K thermal margin, extending lifetime in sealed enclosures. |
Use Scenario: Primary switch in telecom and industrial 48–54 V input, 380–400 V output PFC + LLC combos. IC Role / Device Role / Timing Role: Fast-recovery body diode supports synchronous rectification in secondary side, with 390 ns trr limiting reverse recovery loss. Use Value: 1.5 V VSD forward drop at 7 A enables lower conduction loss than discrete Schottky solutions in high-current auxiliary rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW12N120K5 | TO-247-3 package, identical RDS(on), Qg, and V(BR)DSS; higher RthJC (0.55 °C/W) and larger footprint. | Preferred for through-hole prototyping or legacy TO-247 heatsink compatibility; unsuitable for space-constrained SMT designs. | Select when mechanical mounting flexibility outweighs thermal or density advantages of H²PAK-2. |
| IXTH12N120P | 1200 V, 1.8 Ω RDS(on), 38 nC Qg, but not AEC-Q101 qualified; higher Ciss (1500 pF) and no avalanche rating. | Limited to industrial non-automotive applications; requires external avalanche protection circuitry in inductive loads. | Choose only for cost-sensitive non-automotive systems where qualification and ruggedness are secondary to BOM cost. |
Compared with STW12N120K5 and IXTH12N120P, STH12N120K5-2AG uniquely combines AEC-Q101 compliance, H²PAK-2 thermal superiority (0.47 °C/W), and guaranteed avalanche performance-making it the sole choice for automotive OBCs and safety-critical industrial inverters demanding zero derating at 150 °C.
Availability
STH12N120K5-2AG is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.
Supply support for STH12N120K5-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching in 1000–1200 V applications such as solar inverters, EV charging, and industrial UPS systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STH12N120K5-2AG supports 4.6 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS14124 Rev 2. This derating reflects thermal limitations of the H²PAK-2 package and must be applied when heatsink temperature exceeds 25 °C ambient reference conditions.
Is the body diode suitable for synchronous rectification?
No-the integrated body diode has 390 ns reverse recovery time and 5.0 µC Qrr at 25 °C, making it unsuitable for synchronous rectification above 50 kHz. It is designed for freewheeling and clamping, not high-frequency commutation; external Schottky or GaN FETs are required for SR implementation.
Does this MOSFET require negative gate drive for reliable turn-off?
No-ST specifies VGS(th) between 3 V and 5 V, and recommends 0 V to 10 V gate drive. A negative bias is not required; however, a –5 V to 0 V turn-off voltage improves noise immunity in high-dv/dt environments and is supported by the ±30 V VGS rating.
How is avalanche ruggedness verified for production units?
Every unit undergoes 100% production avalanche testing per JEDEC JESD22-A110, applying a single unclamped inductive pulse at IAR = 2 A and VDD = 50 V. Devices passing this test are marked "AEC-Q101 qualified" and carry full warranty against single-pulse avalanche failure under datasheet conditions.
STH12N120K5-2AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ K5
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44.2 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1370 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-2
STH12N120K5-2AG FAQ
1.How can I place an order for STH12N120K5-2AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STH12N120K5-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STH12N120K5-2AG reliable?
The price and inventory of STH12N120K5-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH12N120K5-2AG is usually 5 days.
3.What payment methods are accepted for STH12N120K5-2AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH12N120K5-2AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STH12N120K5-2AG?
STH12N120K5-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STH12N120K5-2AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STH12N120K5-2AG?
For technical support, including STH12N120K5-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH12N120K5-2AG requirements.
6.How does Aetrix verify that STH12N120K5-2AG is sourced from the original manufacturer or authorized distributors?
All STH12N120K5-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH12N120K5-2AG meets industry standards.
7.What is the process for return or replacement of STH12N120K5-2AG?
All STH12N120K5-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH12N120K5-2AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STH12N120K5-2AG part is unused and in its original packaging.
Return procedure for STH12N120K5-2AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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