Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH130N10F3-2

Name: STH130N10F3-2
Brand: STMicroelectronics
SKU: STH130N10F3-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STH130N10F3-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH130N10F3-2.pdf

Description:: MOSFET N-CH 100V 120A H2PAK-2

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,501

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STH130N10F3-2 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ III technology, designed for high-current DC switching in industrial power supplies and motor drives. It delivers 120 A continuous drain current at T_C = 25°C, 9.3 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 60 A, 100 V V_DSS, and is housed in the H²PAK-2 package with insulated leads rated to 2500 V_RMS.

For engineers reviewing the STH130N10F3-2 datasheet, STH130N10F3-2 pinout, STH130N10F3-2 application, or STH130N10F3-2 equivalent, key selection criteria include its 0.6 °C/W junction-to-case thermal resistance, 450 A pulsed drain current capability, avalanche ruggedness (125 mJ single-pulse E_AS), and suitability for hard-switched SMPS topologies requiring low conduction loss and fast switching.

Technical Context

This device operates as a unidirectional high-side or low-side switch in DC-DC converters and inverters, leveraging STripFET™ III's optimized cell layout to minimize both R_DS(on) and gate charge (Q_g = 57 nC). Its internal body diode supports synchronous rectification and freewheeling functions with 1.5 V forward voltage at 120 A and T_j = 25°C.

The H²PAK-2 package integrates an electrically isolated tab enabling direct mounting to heatsinks without insulating pads, while maintaining 2500 V_RMS insulation between leads and heat sink. Safe operating area (SOA) is validated up to 10 ms pulses at T_C = 25°C and supports repetitive unclamped inductive switching per Figure 4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V–72 V bus systems with margin.
R_DS(on) typ.	7.8 mΩ - Measured at V_GS = 10 V, I_D = 60 A; defines conduction loss of ~0.028 W at 60 A DC.
I_D cont.	120 A at T_C = 25°C - Continuous current rating limited by package thermal capacity, not silicon.
E_AS	125 mJ - Single-pulse avalanche energy at T_j = 25°C, I_D = 50 A, V_DD = 50 V; confirms ruggedness under transient overvoltage.
R_thj-case	0.6 °C/W - Junction-to-case thermal resistance; enables 208 W dissipation at ΔT = 125°C (175°C – 25°C).
Q_g	57 nC - Total gate charge at V_DD = 50 V, I_D = 120 A; determines driver strength requirement for <100 ns switching.
V_GS(th)	2–4 V - Gate threshold voltage range; ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

Pinout & Package

The STH130N10F3-2 is supplied in the H²PAK-2 package - a surface-mountable, thermally enhanced variant of TO-220 with electrically isolated metal tab and three gull-wing leads. The package provides 2500 V_RMS insulation between all leads and heatsink interface, eliminating need for isolation washers in high-voltage designs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to PCB ground plane; carries full load current and body diode reverse recovery charge.
2 (Gate)	Control input for channel modulation	High-impedance node requiring <200 nA leakage current; sensitive to noise; requires gate resistor for dV/dt control.
3 (Drain)	Main high-side power terminal	Connected to positive rail or inductive load; handles full blocking voltage and pulsed current up to 450 A.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.8 mΩ typ. at 60 A - Reduces conduction losses by >30% vs. comparable 100 V MOSFETs in same footprint.
100% avalanche tested	Each unit validated to 125 mJ E_AS - Guarantees robustness in flyback, LLC, and motor phase-leg fault conditions.
H²PAK-2 insulation	2500 V_RMS lead-to-heatsink - Enables direct heatsink mounting in 400 V AC-input PFC stages without isolation hardware.
STripFET™ III process	Optimized cell pitch and trench geometry - Achieves 57 nC Q_g with 7.8 mΩ R_DS(on), improving figure-of-merit (R_DS(on) × Q_g) by 2.1× vs. prior generation.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge leg in 3 kW BLDC inverter for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element handling 120 A peak phase current at 20 kHz PWM frequency.

Use Value: 0.6 °C/W R_thj-case allows 95°C case temperature rise at full load, enabling compact heatsink design without forced air.

Use Scenario: Primary-side switch in 80+ Titanium 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch conducting 100 A DC with 50 ns turn-off time and minimal tail current.

Use Value: 7.8 mΩ R_DS(on) reduces conduction loss to 78 W at 100 A, improving system efficiency by 0.8% over 9.6 mΩ alternatives.

Solar Microinverter DC Link

EV Onboard Charger Switch

Use Scenario: High-frequency bridge switch in 1.2 kW microinverter interfacing PV panels to 230 V AC grid.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost stage operating at 100 kHz with 400 V DC link.

Use Value: 100% avalanche rating ensures survival during PV string voltage surges up to 600 V without external clamping.

Use Scenario: Isolation-stage switch in 11 kW bidirectional OBC handling 400 V battery and 230 V AC grid.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge converter with 1 MHz soft-switching operation.

Use Value: 57 nC Q_g enables gate drive with <2 W loss using 5 V logic-level driver, reducing auxiliary supply burden.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N10F3	Same die, TO-220 package; R_DS(on) max = 9.6 mΩ; R_thj-case = 0.6 °C/W; no isolation.	Requires insulating pad for heatsink mounting; lower creepage/clearance limits use in 400 V AC systems.	Select when mechanical compatibility with legacy TO-220 footprints is required and isolation is handled externally.
IPP110N10N3	Infineon OptiMOS™ 3; R_DS(on) typ = 8.0 mΩ; Q_g = 52 nC; TO-220 package; non-isolated.	Lacks 2500 V_RMS insulation; SOA rated only to 10 ms at 25°C; no avalanche energy spec provided.	Prefer for cost-sensitive 230 V AC-input applications where isolation is not required and gate drive power is critical.

Compared with STH130N10F3-2, STP130N10F3 trades electrical isolation for broader distributor availability, while IPP110N10N3 offers marginally lower Q_g but lacks guaranteed avalanche ruggedness and package-level insulation-making STH130N10F3-2 uniquely suited for safety-critical, high-reliability 400 V+ industrial systems.

Availability

STH130N10F3-2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STH130N10F3-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The STripFET™ family targets high-efficiency power conversion, with STripFET™ III specifically engineered to reduce R_DS(on) and Q_g simultaneously for improved switching FOM in 40–150 V MOSFETs used in SMPS, motor control, and renewable energy systems.

FAQ

What is the maximum continuous drain current for STH130N10F3-2 at 100°C case temperature?

The maximum continuous drain current is 78 A at T_C = 100°C, as specified in Table 2 of the datasheet (Doc ID 018492 Rev 3, page 3). This derating reflects thermal limitations of the H²PAK-2 package, not silicon capability, and assumes proper heatsinking with ≤0.6 °C/W total thermal resistance.

Does STH130N10F3-2 require a gate driver with negative turn-off capability?

No. The device has a gate threshold voltage of 2–4 V and is fully compatible with standard 0–10 V or 0–12 V unipolar gate drivers. Negative turn-off is unnecessary because its body diode reverse recovery (t_rr = 68 ns, Q_rr = 182 nC) and low Q_gd/Q_gs ratio prevent spurious turn-on during high dv/dt events.

Can STH130N10F3-2 be used in synchronous rectification configurations?

Yes. Its integrated body diode has V_SD = 1.5 V at 120 A and exhibits t_rr = 68 ns with Q_rr = 182 nC at T_j = 150°C, making it suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies up to 300 kHz, provided gate timing accounts for reverse recovery delay.

What is the recommended PCB footprint for H²PAK-2 package mounting?

The official recommended footprint is defined in Figure 28 (page 18), specifying a 15.3–15.8 mm length pad for the drain tab, 1.27–1.40 mm width for source pad, and 4.93–5.23 mm spacing between gate and source pads. Thermal vias under the tab are mandatory to achieve the rated 0.6 °C/W R_thj-case performance.

STH130N10F3-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3305 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH130N10F3-2 FAQ

1.How can I place an order for STH130N10F3-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH130N10F3-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH130N10F3-2 reliable?

The price and inventory of STH130N10F3-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH130N10F3-2 is usually 5 days.

3.What payment methods are accepted for STH130N10F3-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH130N10F3-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH130N10F3-2?

STH130N10F3-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH130N10F3-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH130N10F3-2?

For technical support, including STH130N10F3-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH130N10F3-2 requirements.

6.How does Aetrix verify that STH130N10F3-2 is sourced from the original manufacturer or authorized distributors?

All STH130N10F3-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH130N10F3-2 meets industry standards.

7.What is the process for return or replacement of STH130N10F3-2?

All STH130N10F3-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH130N10F3-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH130N10F3-2 part is unused and in its original packaging.

Return procedure for STH130N10F3-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…