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STMicroelectronics STH140N6F7-2

Part No.:
STH140N6F7-2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTH140N6F7-2.pdf
Description:
MOSFET N-CH 60V 80A H2PAK-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,278

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Product details

Overview

STH140N6F7-2 from STMicroelectronics is an N-channel 60 V, 80 A, 110 W Power MOSFET in H2PAK-2 package, featuring 0.0025 Ω typ. RDS(on), 100% avalanche tested design, and STripFET™ VII DeepGATE™ technology. It serves as a high-current switching device in DC-DC converters, motor drives, and industrial power supplies where low conduction loss and thermal robustness are critical.

For engineers reviewing the STH140N6F7-2 datasheet, STH140N6F7-2 pinout, STH140N6F7-2 application, or STH140N6F7-2 equivalent, this page delivers verified electrical ratings, package-specific thermal data, gate charge metrics, source-drain diode performance, and real-world switching behavior under resistive and inductive loads.

Technical Context

This MOSFET employs ST's 7th-generation STripFET™ process with DeepGATE™ gate architecture to minimize RDS(on) while maintaining ruggedness. Its H2PAK-2 package delivers 1.36 °C/W junction-to-case thermal resistance and supports 80 A continuous drain current at TC = 100 °C.

The device exhibits 2700 pF input capacitance (Ciss) and 25 pF reverse transfer capacitance (Crss) at VDS = 25 V, enabling fast switching with 40 nC total gate charge. Its source-drain diode sustains 80 A continuous and 320 A pulsed current with controlled reverse recovery characteristics.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage for 48 V bus systems with margin
RDS(on) typ. 0.0025 Ω - Enables <1.6 W conduction loss at 80 A, reducing heatsink requirements
ID cont. @ TC=100°C 80 A - Sustained high-current capability without derating in compact layouts
PTOT @ TC=25°C 110 W - High power dissipation capacity enabled by low Rthj-case (1.36 °C/W)
Ciss 2700 pF - Input capacitance defining gate drive energy and turn-on speed
Qg 40 nC - Total gate charge determining required driver peak current and switching loss
VGS(th) 2–4 V - Threshold voltage range ensuring reliable enhancement-mode turn-on with 10 V gate drive

Pinout & Package

H2PAK-2 package: surface-mount, thermally enhanced, isolated tab (drain), 3-terminal configuration with optimized PCB footprint per Figure 10 (DocID025089 Rev 1).

Pin/Terminal Circuit Role Design Meaning
D (Tab) Drain Exposed metal tab electrically connected to drain; primary heat path to PCB copper pour
G (1) Gate Control terminal requiring ≤±20 V drive; low Ciss/Crss enables efficient high-frequency switching
S (2,3) Source Common return node for load current and gate drive reference; dual-source pins reduce parasitic inductance

Key Features

Feature Design Value
100% avalanche tested Guarantees ruggedness under unclamped inductive switching (UIS) events up to rated EAS
Ultra-low RDS(on) 0.0025 Ω typ. minimizes I²R losses in high-current paths, improving system efficiency >95% in 48 V converters
STripFET™ VII DeepGATE™ 7th-gen trench gate structure reduces gate charge and output capacitance while maintaining breakdown integrity
H2PAK-2 thermal performance 1.36 °C/W Rthj-case enables 80 A operation with minimal external heatsinking on 1-in² 2 oz Cu PCB

Applications

DC-DC Converters Motor Drives

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–500 kHz with hard-switched PWM control.

Use Value: 0.0025 Ω RDS(on) cuts conduction loss by >30% vs. legacy 3.5 mΩ devices, enabling higher power density.

Use Scenario: Half-bridge leg in 3-phase BLDC motor controllers for industrial automation equipment.

IC Role / Device Role / Timing Role: Low-side switch handling 60–80 A continuous phase current with 10–20 kHz PWM.

Use Value: 100% avalanche rating ensures survival during back-EMF transients and short-circuit fault conditions.

Industrial Power Supplies UPS Systems

Use Scenario: Output stage switch in high-efficiency AC-DC PSUs delivering 1–2 kW at 50/60 Hz line frequency.

IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant topology with ZVS operation.

Use Value: Low Crss (25 pF) improves zero-voltage switching margin and reduces EMI generation.

Use Scenario: Inverter bridge in online double-conversion UPS units supporting 3 kVA loads.

IC Role / Device Role / Timing Role: Bidirectional switching element managing battery charging and AC inversion paths.

Use Value: 80 A continuous rating and 320 A pulsed capability support surge currents during grid failover transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF1404PBF RDS(on) = 4 mΩ (higher), Qg = 131 nC (3.3× larger), TO-220 package Lower current density; requires larger heatsink and slower switching due to higher gate charge Select when cost sensitivity outweighs efficiency and board space constraints
IXFH80N60X3 RDS(on) = 0.0045 Ω, Qg = 105 nC, TO-247 package, 600 V rating Over-specified voltage rating increases cost and capacitance; unsuitable for 48 V optimized designs Prefer only if system requires 600 V blocking or legacy TO-247 mechanical compatibility

Compared with IRF1404PBF and IXFH80N60X3, STH140N6F7-2 delivers superior power density via its 0.0025 Ω RDS(on), 40 nC Qg, and H2PAK-2 thermal interface-enabling smaller magnetics, reduced cooling volume, and higher-frequency operation without sacrificing ruggedness.

Availability

STH140N6F7-2 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for STH140N6F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

STH140N6F7-2 belongs to the STripFET™ VII Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 48 V infrastructure systems-including servers, telecom rectifiers, and factory automation drives.

FAQ

What is the maximum continuous drain current for STH140N6F7-2 at 100°C case temperature?

The STH140N6F7-2 supports 80 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet (DocID025089 Rev 1). This rating is enabled by its H2PAK-2 package's 1.36 °C/W junction-to-case thermal resistance and 110 W total power dissipation at 25 °C case temperature.

Does STH140N6F7-2 have integrated avalanche ruggedness?

Yes-STH140N6F7-2 undergoes 100% production avalanche testing per the datasheet's "Features" section. This confirms its ability to withstand unclamped inductive switching (UIS) events without degradation, a critical requirement for motor drive and converter applications with reactive loads.

How does the H2PAK-2 package compare thermally to TO-220FP for this MOSFET?

H2PAK-2 provides 1.36 °C/W junction-to-case thermal resistance versus 5 °C/W for TO-220FP (Table 3), enabling significantly higher power handling. At identical 80 A current, H2PAK-2 reduces junction temperature rise by ~360 °C·W compared to TO-220FP-directly supporting higher ambient or smaller heatsinks.

Can STH140N6F7-2 be used in synchronous rectification topologies?

Yes-its 0.0025 Ω typ. RDS(on), low 25 pF Crss, and fast intrinsic body diode (trr not specified but characterized per Figure 4) make it suitable for synchronous rectification in buck, LLC, and active clamp forward converters operating up to 500 kHz, provided gate drive timing avoids shoot-through.

STH140N6F7-2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VII
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
158W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-2

STH140N6F7-2 FAQ

1.How can I place an order for STH140N6F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH140N6F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH140N6F7-2 reliable?

The price and inventory of STH140N6F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH140N6F7-2 is usually 5 days.

3.What payment methods are accepted for STH140N6F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH140N6F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH140N6F7-2?

STH140N6F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH140N6F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH140N6F7-2?

For technical support, including STH140N6F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH140N6F7-2 requirements.

6.How does Aetrix verify that STH140N6F7-2 is sourced from the original manufacturer or authorized distributors?

All STH140N6F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH140N6F7-2 meets industry standards.

7.What is the process for return or replacement of STH140N6F7-2?

All STH140N6F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH140N6F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH140N6F7-2 part is unused and in its original packaging.

Return procedure for STH140N6F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STH140N6F7-2 Tags

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