STMicroelectronics STH140N8F7-2
- Part No.:
- STH140N8F7-2
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STH140N8F7-2.pdf
- Description:
- MOSFET N-CH 80V 90A H2PAK-2
- Quantity:
- Payment:

- Shipping:

Inventory:920
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STH140N8F7-2 from STMicroelectronics is an N-channel 80 V, 3.3 mΩ typ. RDS(on), 90 A continuous drain current Power MOSFET in H2PAK-2 package, optimized for high-efficiency switching in DC-DC converters and motor drives. It features 200 W total power dissipation, 515 mJ single-pulse avalanche energy, and low Crss/Ciss ratio for EMI immunity.
For engineers reviewing the STH140N8F7-2 datasheet, STH140N8F7-2 pinout, STH140N8F7-2 application, or STH140N8F7-2 equivalent, key selection criteria include RDS(on) at 10 V gate drive, thermal resistance (Rthj-case = 0.75 °C/W), safe operating area limits, and unclamped inductive switching ruggedness.
Technical Context
This device employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while reducing gate charge (Qg = 96 nC) and output capacitance (Coss = 1195 pF). Its low Crss/Ciss ratio (≈1.7%) minimizes Miller-induced turn-off delay and improves noise immunity in high-dV/dt environments.
The H2PAK-2 package enables high-current capability with low thermal resistance (Rthj-case = 0.75 °C/W) and supports pulsed drain currents up to 360 A. Avalanche ruggedness is validated at 515 mJ under defined test conditions (Tj = 25 °C, ID = 18.5 A, VDD = 50 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage compatible with 48 V industrial bus and 60 V automotive systems |
| RDS(on) typ. | 3.3 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current power stages |
| ID cont. | 90 A @ TC = 25 °C - Limited by package thermal capacity, not silicon die |
| EAS | 515 mJ - Confirmed unclamped inductive switching robustness for motor control and relay driving |
| Qg | 96 nC - Total gate charge determines driver strength requirement and switching loss trade-off |
| Crss/Ciss | 105/6340 pF - Low ratio (1.66%) reduces dv/dt-induced false turn-on risk |
| Rthj-case | 0.75 °C/W - Enables direct heatsink mounting without thermal interface material degradation concerns |
Pinout & Package
H2PAK-2 is a surface-mount, double-sided cooling package with isolated source pad and exposed drain tab. It provides low-inductance, high-current paths and supports PCB-side thermal transfer via the drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path, high-side switch node | Exposed metal tab electrically connected to drain; serves as primary thermal and current path |
| Source (Pad) | Reference node for gate drive and current sensing | Isolated copper pad; used for Kelvin source connection in precision gate drive layouts |
| Gate (Pad) | Control terminal for channel modulation | Small-signal pad requiring low-inductance routing; sensitive to ringing due to Qgd = 26 nC |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.3 mΩ typ. at 10 V - Reduces conduction losses by >25% vs. prior-generation F6 devices in same package |
| Enhanced FoM (RDS(on) × Qg) | 317 Ω·nC - Improves efficiency in hard-switched topologies like synchronous buck converters |
| Low Crss/Ciss ratio | 1.66% - Minimizes Miller plateau duration and improves EMI behavior in noisy environments |
| Avalanche ruggedness | 515 mJ single-pulse - Eliminates need for external snubbers in inductive load switching |
| H2PAK-2 thermal performance | Rthj-case = 0.75 °C/W - Supports >150 W continuous power dissipation with modest heatsinking |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: 48 V BLDC motor inverter stage with 60–90 A phase current. IC Role / Device Role / Timing Role: High-side N-channel switch in 3-phase bridge, driven by isolated gate driver. Use Value: 3.3 mΩ RDS(on) limits conduction loss to ≤1.2 W per device at 60 A, enabling compact thermal design. | Use Scenario: Primary-side switch in 1 kW telecom half-bridge LLC resonant converter. IC Role / Device Role / Timing Role: Main switching element handling high peak currents and fast dV/dt transitions. Use Value: Low Crss/Ciss ratio suppresses false triggering during zero-voltage switching transitions. |
| Industrial Power Supplies | Automotive On-Board Chargers |
Use Scenario: Output synchronous rectifier in 3 kW server PSU with 12 V/200 A output. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter delivering regulated 12 V rail. Use Value: 90 A continuous rating allows parallel-free operation, simplifying layout and reducing component count. | Use Scenario: DC-link switching in 11 kW AC/DC OBC with 400 V nominal input. IC Role / Device Role / Timing Role: High-current switching device in active front-end or isolation stage. Use Value: 515 mJ avalanche energy withstands line transients and regenerative braking surges without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N08N3 G | RDS(on) = 3.2 mΩ, Qg = 105 nC, TO-263-7 package | Higher gate charge increases driver loss; different pinout requires PCB redesign | Preferred where lower RDS(on) outweighs gate drive complexity |
| IRFP4868PBF | RDS(on) = 3.6 mΩ, Qg = 120 nC, TO-247AC package | Larger footprint and higher thermal resistance (Rthj-case = 0.95 °C/W) | Suitable when through-hole mounting or legacy TO-247 compatibility is required |
Compared with IPB180N08N3 G and IRFP4868PBF, STH140N8F7-2 offers best-in-class FoM (317 Ω·nC) and lowest thermal resistance in surface-mount form, making it optimal for space-constrained, high-power-density designs where thermal management is critical.
Availability
STH140N8F7-2 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power supply applications requiring stable component supply and long-term production continuity.
Supply support for STH140N8F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies.
This device belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and automotive power systems where low conduction loss and avalanche reliability are mandatory.
FAQ
What is the maximum gate-source voltage rating for STH140N8F7-2?
The absolute maximum VGS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for full enhancement, with negative turn-off bias (e.g., –5 V) improving noise immunity in high-dV/dt environments.
Can STH140N8F7-2 be used in avalanche mode continuously?
No - the 515 mJ EAS rating applies only to single-pulse unclamped inductive switching events. Continuous avalanche operation is not characterized or guaranteed; repeated stress degrades RDS(on) and may cause thermal runaway.
Does the H2PAK-2 package require solder paste stencil optimization?
Yes - the large drain tab demands controlled solder volume to prevent voiding and ensure mechanical integrity. ST recommends a 120 µm thick stencil with 80% aperture reduction for the drain pad, and standard 100 µm openings for gate and source pads.
How does temperature affect RDS(on) in STH140N8F7-2?
RDS(on) increases linearly with junction temperature: typical value rises from 3.3 mΩ at 25 °C to ~4.7 mΩ at 175 °C. This 42% increase must be factored into worst-case conduction loss calculations for thermal design validation.
STH140N8F7-2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 96 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6340 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-2
STH140N8F7-2 FAQ
1.How can I place an order for STH140N8F7-2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STH140N8F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STH140N8F7-2 reliable?
The price and inventory of STH140N8F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH140N8F7-2 is usually 5 days.
3.What payment methods are accepted for STH140N8F7-2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH140N8F7-2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STH140N8F7-2?
STH140N8F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STH140N8F7-2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STH140N8F7-2?
For technical support, including STH140N8F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH140N8F7-2 requirements.
6.How does Aetrix verify that STH140N8F7-2 is sourced from the original manufacturer or authorized distributors?
All STH140N8F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH140N8F7-2 meets industry standards.
7.What is the process for return or replacement of STH140N8F7-2?
All STH140N8F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH140N8F7-2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STH140N8F7-2 part is unused and in its original packaging.
Return procedure for STH140N8F7-2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STH140N8F7-2 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
