Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STH140N8F7-2

Part No.:
STH140N8F7-2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTH140N8F7-2.pdf
Description:
MOSFET N-CH 80V 90A H2PAK-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:920

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STH140N8F7-2 from STMicroelectronics is an N-channel 80 V, 3.3 mΩ typ. RDS(on), 90 A continuous drain current Power MOSFET in H2PAK-2 package, optimized for high-efficiency switching in DC-DC converters and motor drives. It features 200 W total power dissipation, 515 mJ single-pulse avalanche energy, and low Crss/Ciss ratio for EMI immunity.

For engineers reviewing the STH140N8F7-2 datasheet, STH140N8F7-2 pinout, STH140N8F7-2 application, or STH140N8F7-2 equivalent, key selection criteria include RDS(on) at 10 V gate drive, thermal resistance (Rthj-case = 0.75 °C/W), safe operating area limits, and unclamped inductive switching ruggedness.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while reducing gate charge (Qg = 96 nC) and output capacitance (Coss = 1195 pF). Its low Crss/Ciss ratio (≈1.7%) minimizes Miller-induced turn-off delay and improves noise immunity in high-dV/dt environments.

The H2PAK-2 package enables high-current capability with low thermal resistance (Rthj-case = 0.75 °C/W) and supports pulsed drain currents up to 360 A. Avalanche ruggedness is validated at 515 mJ under defined test conditions (Tj = 25 °C, ID = 18.5 A, VDD = 50 V).

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum blocking voltage compatible with 48 V industrial bus and 60 V automotive systems
RDS(on) typ.3.3 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current power stages
ID cont.90 A @ TC = 25 °C - Limited by package thermal capacity, not silicon die
EAS515 mJ - Confirmed unclamped inductive switching robustness for motor control and relay driving
Qg96 nC - Total gate charge determines driver strength requirement and switching loss trade-off
Crss/Ciss105/6340 pF - Low ratio (1.66%) reduces dv/dt-induced false turn-on risk
Rthj-case0.75 °C/W - Enables direct heatsink mounting without thermal interface material degradation concerns

Pinout & Package

H2PAK-2 is a surface-mount, double-sided cooling package with isolated source pad and exposed drain tab. It provides low-inductance, high-current paths and supports PCB-side thermal transfer via the drain tab.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path, high-side switch nodeExposed metal tab electrically connected to drain; serves as primary thermal and current path
Source (Pad)Reference node for gate drive and current sensingIsolated copper pad; used for Kelvin source connection in precision gate drive layouts
Gate (Pad)Control terminal for channel modulationSmall-signal pad requiring low-inductance routing; sensitive to ringing due to Qgd = 26 nC

Key Features

FeatureDesign Value
Ultra-low RDS(on)3.3 mΩ typ. at 10 V - Reduces conduction losses by >25% vs. prior-generation F6 devices in same package
Enhanced FoM (RDS(on) × Qg)317 Ω·nC - Improves efficiency in hard-switched topologies like synchronous buck converters
Low Crss/Ciss ratio1.66% - Minimizes Miller plateau duration and improves EMI behavior in noisy environments
Avalanche ruggedness515 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
H2PAK-2 thermal performanceRthj-case = 0.75 °C/W - Supports >150 W continuous power dissipation with modest heatsinking

Applications

Motor ControlDC-DC Converters

Use Scenario: 48 V BLDC motor inverter stage with 60–90 A phase current.

IC Role / Device Role / Timing Role: High-side N-channel switch in 3-phase bridge, driven by isolated gate driver.

Use Value: 3.3 mΩ RDS(on) limits conduction loss to ≤1.2 W per device at 60 A, enabling compact thermal design.

Use Scenario: Primary-side switch in 1 kW telecom half-bridge LLC resonant converter.

IC Role / Device Role / Timing Role: Main switching element handling high peak currents and fast dV/dt transitions.

Use Value: Low Crss/Ciss ratio suppresses false triggering during zero-voltage switching transitions.

Industrial Power SuppliesAutomotive On-Board Chargers

Use Scenario: Output synchronous rectifier in 3 kW server PSU with 12 V/200 A output.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter delivering regulated 12 V rail.

Use Value: 90 A continuous rating allows parallel-free operation, simplifying layout and reducing component count.

Use Scenario: DC-link switching in 11 kW AC/DC OBC with 400 V nominal input.

IC Role / Device Role / Timing Role: High-current switching device in active front-end or isolation stage.

Use Value: 515 mJ avalanche energy withstands line transients and regenerative braking surges without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB180N08N3 GRDS(on) = 3.2 mΩ, Qg = 105 nC, TO-263-7 packageHigher gate charge increases driver loss; different pinout requires PCB redesignPreferred where lower RDS(on) outweighs gate drive complexity
IRFP4868PBFRDS(on) = 3.6 mΩ, Qg = 120 nC, TO-247AC packageLarger footprint and higher thermal resistance (Rthj-case = 0.95 °C/W)Suitable when through-hole mounting or legacy TO-247 compatibility is required

Compared with IPB180N08N3 G and IRFP4868PBF, STH140N8F7-2 offers best-in-class FoM (317 Ω·nC) and lowest thermal resistance in surface-mount form, making it optimal for space-constrained, high-power-density designs where thermal management is critical.

Availability

STH140N8F7-2 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power supply applications requiring stable component supply and long-term production continuity.

Supply support for STH140N8F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies.

This device belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and automotive power systems where low conduction loss and avalanche reliability are mandatory.

FAQ

What is the maximum gate-source voltage rating for STH140N8F7-2?

The absolute maximum VGS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for full enhancement, with negative turn-off bias (e.g., –5 V) improving noise immunity in high-dV/dt environments.

Can STH140N8F7-2 be used in avalanche mode continuously?

No - the 515 mJ EAS rating applies only to single-pulse unclamped inductive switching events. Continuous avalanche operation is not characterized or guaranteed; repeated stress degrades RDS(on) and may cause thermal runaway.

Does the H2PAK-2 package require solder paste stencil optimization?

Yes - the large drain tab demands controlled solder volume to prevent voiding and ensure mechanical integrity. ST recommends a 120 µm thick stencil with 80% aperture reduction for the drain pad, and standard 100 µm openings for gate and source pads.

How does temperature affect RDS(on) in STH140N8F7-2?

RDS(on) increases linearly with junction temperature: typical value rises from 3.3 mΩ at 25 °C to ~4.7 mΩ at 175 °C. This 42% increase must be factored into worst-case conduction loss calculations for thermal design validation.

STH140N8F7-2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VII
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
96 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6340 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-2

STH140N8F7-2 FAQ

1.How can I place an order for STH140N8F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH140N8F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH140N8F7-2 reliable?

The price and inventory of STH140N8F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH140N8F7-2 is usually 5 days.

3.What payment methods are accepted for STH140N8F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH140N8F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH140N8F7-2?

STH140N8F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH140N8F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH140N8F7-2?

For technical support, including STH140N8F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH140N8F7-2 requirements.

6.How does Aetrix verify that STH140N8F7-2 is sourced from the original manufacturer or authorized distributors?

All STH140N8F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH140N8F7-2 meets industry standards.

7.What is the process for return or replacement of STH140N8F7-2?

All STH140N8F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH140N8F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH140N8F7-2 part is unused and in its original packaging.

Return procedure for STH140N8F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STH140N8F7-2 Tags

  • STH140N8F7-2
  • STH140N8F7-2 PDF
  • STH140N8F7-2 Datasheet
  • STH140N8F7-2 Specifications
  • STH140N8F7-2 Images
  • STMicroelectronics
  • STMicroelectronics STH140N8F7-2
  • Buy STH140N8F7-2
  • STH140N8F7-2 Price
  • STH140N8F7-2 Distributor
  • STH140N8F7-2 Supplier
  • STH140N8F7-2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER