STMicroelectronics STH145N8F7-2AG
- Part No.:
- STH145N8F7-2AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STH145N8F7-2AG.pdf
- Description:
- MOSFET N-CH 80V 90A H2PAK-2
- Quantity:
- Payment:

- Shipping:

Inventory:1,520
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Product details
Overview
STH145N8F7-2AG from STMicroelectronics is an automotive-grade N-channel Power MOSFET with 80 V VDS, 3.3 mΩ typ. RDS(on) at VGS = 10 V, 90 A continuous drain current, and H²PAK-2 package. It employs STripFET™ F7 trench-gate technology for low conduction loss and fast switching in high-current DC-DC and motor control stages.
For engineers reviewing the STH145N8F7-2AG datasheet, STH145N8F7-2AG pinout, STH145N8F7-2AG application, or STH145N8F7-2AG equivalent, key selection criteria include RDS(on) vs. temperature stability, avalanche energy rating (515 mJ), Crss/Ciss ratio for EMI robustness, and AEC-Q101 qualification for under-hood use.
Technical Context
This device uses STripFET™ F7's enhanced trench gate structure to simultaneously minimize RDS(on) (3.3 mΩ typ.) and gate charge (Qg = 96 nC), enabling high-efficiency synchronous rectification and PWM-driven loads. Its low Crss/Ciss ratio (105/6340 pF) suppresses Miller-induced turn-on during high-dV/dt transitions.
The H²PAK-2 package delivers 0.75 °C/W junction-to-case thermal resistance and supports 200 W total dissipation at TC = 25 °C. Avalanche ruggedness is validated at 515 mJ (Tj = 25 °C, ID = 18.5 A, VDD = 50 V), critical for inductive load switching without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 48 V automotive systems with 20 % margin for load dump transients |
| RDS(on) max | 4 mΩ - Limits conduction loss to ≤ 32.4 W at 90 A, enabling compact heatsink design |
| ID cont @ TC=100°C | 90 A - Maintains full rated current up to engine bay ambient temperatures |
| EAS | 515 mJ - Withstands unclamped inductive switching events without failure |
| Crss/Ciss | 105/6340 pF - Low ratio improves noise immunity and reduces gate drive power |
| Qg | 96 nC - Enables <100 ns switching times with standard 4.7 Ω gate resistor |
| Tj range | −55 to +175 °C - Qualified for extended automotive temperature operation |
Pinout & Package
H²PAK-2 is a surface-mount, dual-side cooling package with isolated drain tab and integrated source/ground terminals. It features a 15.8 mm × 10.4 mm footprint, 1.37 mm typical height, and FR-4 board thermal resistance of 35 °C/W (1 inch², 2 oz Cu).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-current power return path | Exposed copper tab electrically connected to drain; requires insulated mounting for PCB ground isolation |
| Source (S1–S3) | Power return and gate reference | Three parallel source pins reduce bond-wire inductance and improve current sharing in high-frequency PWM |
| Gate (G) | Switching control input | Single gate pin with low-impedance path; layout must minimize loop inductance to prevent oscillation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control and transmission modules |
| Low RDS(on) × Qg FoM | 307 mΩ·nC - Optimized trade-off between conduction and switching losses in 10–100 kHz converters |
| High avalanche energy | 515 mJ single-pulse - Eliminates need for external clamping diodes in solenoid drivers |
| Low Crss/Ciss ratio | 1.66 % - Reduces risk of false turn-on during high-speed bridge commutation |
| Enhanced trench gate | Reduces gate charge by 22 % vs. prior F6 generation - lowers driver IC stress and power consumption |
Applications
| Engine Start-Stop System | 48 V DC-DC Converter |
|---|---|
Use Scenario: High-current battery disconnect and restart sequencing in micro-hybrid vehicles. IC Role / Device Role / Timing Role: Main power switch controlling 48 V starter-generator interface. Use Value: 90 A continuous rating and 515 mJ avalanche capability ensure reliable engagement under cranking surge conditions. | Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter. IC Role / Device Role / Timing Role: High-side N-channel switch operating at 50–100 kHz PWM frequency. Use Value: 3.3 mΩ RDS(on) minimizes conduction loss while low Qg enables efficient gate driving with minimal dead-time penalty. |
| Electric Power Steering (EPS) | Automotive HVAC Blower |
Use Scenario: Three-phase inverter leg for brushless DC motor control in steering assist units. IC Role / Device Role / Timing Role: Low-side switch in 60 V-rated inverter stage with fast fall time (44 ns). Use Value: 175 °C max junction temperature and −55 °C min storage rating support operation across full vehicle lifecycle extremes. | Use Scenario: PWM-controlled fan driver in climate control system with overcurrent and thermal protection. IC Role / Device Role / Timing Role: Single-ended switch regulating airflow via duty-cycle modulation. Use Value: Integrated body diode with 1.2 V forward drop (ISD = 90 A) eliminates need for external freewheeling diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP036N08N | RDS(on) = 3.6 mΩ (typ.), Qg = 102 nC, same H²PAK-2 footprint | Slightly higher gate charge increases driver loss; identical avalanche rating | Preferred where gate drive voltage headroom exceeds 12 V and layout allows minor Qg increase |
| ON Semiconductor NTMFS5C428NT1G | RDS(on) = 4.2 mΩ (max.), Qg = 85 nC, SO-8FL package | Lower thermal performance (Rthj-c = 1.5 °C/W), not AEC-Q101 qualified | Only suitable for non-automotive 48 V systems with derated current (≤ 60 A) |
Compared with IPP036N08N and NTMFS5C428NT1G, STH145N8F7-2AG provides superior RDS(on) × Qg figure of merit and guaranteed AEC-Q101 compliance-making it the only choice for production automotive inverters requiring both efficiency and qualification traceability.
Availability
STH145N8F7-2AG is available at Aetrix Electronics and suitable for engine start-stop systems, 48 V DC-DC converters, and electric power steering modules requiring stable component supply across multi-year automotive production cycles.
Supply support for STH145N8F7-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to ST's STripFET™ F7 automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in 48 V mild-hybrid architectures and EPS systems.
FAQ
What is the maximum allowable gate-source voltage for STH145N8F7-2AG?
The absolute maximum VGS is ±20 V per the datasheet. Operation beyond ±15 V risks oxide breakdown, especially at elevated temperatures. For robust design, gate drive should be clamped to +12 V/−5 V using Zener diodes or dedicated gate drivers with rail-limited outputs.
Does STH145N8F7-2AG include an integrated body diode, and what are its characteristics?
Yes-it features a monolithic source-drain diode with 90 A continuous forward current rating and 1.2 V typical forward voltage at 90 A and Tj = 25 °C. Reverse recovery charge is 92 nC, and trr is 58 ns at ISD = 64 A, di/dt = 100 A/µs, and Tj = 150 °C-suitable for hard-switched topologies with controlled commutation.
How does the H²PAK-2 package enable thermal management in automotive environments?
H²PAK-2 provides dual-side cooling: the exposed drain tab conducts heat directly to heatsinks or chassis, while source pins transfer heat through PCB copper. Its 0.75 °C/W Rthj-case and 35 °C/W Rthj-pcb (1 inch², 2 oz Cu) allow sustained 90 A operation without forced air, meeting under-hood thermal constraints up to 105 °C ambient.
Is STH145N8F7-2AG suitable for paralleling multiple devices to increase current handling?
Yes-the device exhibits positive RDS(on) temperature coefficient above 25 °C, ensuring inherent current sharing when paralleled. Layout must balance gate loop inductance and thermal paths; ST recommends symmetrical routing, matched gate resistors (≤ 4.7 Ω), and shared thermal interface to avoid thermal runaway.
STH145N8F7-2AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ F7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 96 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6340 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-2
STH145N8F7-2AG FAQ
1.How can I place an order for STH145N8F7-2AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STH145N8F7-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STH145N8F7-2AG reliable?
The price and inventory of STH145N8F7-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH145N8F7-2AG is usually 5 days.
3.What payment methods are accepted for STH145N8F7-2AG?
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4.How is shipping managed for STH145N8F7-2AG?
STH145N8F7-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STH145N8F7-2AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STH145N8F7-2AG?
For technical support, including STH145N8F7-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH145N8F7-2AG requirements.
6.How does Aetrix verify that STH145N8F7-2AG is sourced from the original manufacturer or authorized distributors?
All STH145N8F7-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH145N8F7-2AG meets industry standards.
7.What is the process for return or replacement of STH145N8F7-2AG?
All STH145N8F7-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH145N8F7-2AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STH145N8F7-2AG part is unused and in its original packaging.
Return procedure for STH145N8F7-2AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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