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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH150N10F7-2

Name: STH150N10F7-2
Brand: STMicroelectronics
SKU: STH150N10F7-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH150N10F7-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH150N10F7-2.pdf

Description:: MOSFET N-CH 100V 110A H2PAK-2

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Product details

Overview

STH150N10F7-2 from STMicroelectronics is an N-channel 100 V, 110 A Power MOSFET in H2PAK-2 package, featuring 3.4 mΩ typ. R_DS(on), 117 nC total gate charge, and 495 mJ single-pulse avalanche energy. It delivers high-current switching for DC-DC converters, motor drives, and industrial power supplies where low conduction loss and fast switching are critical.

For engineers reviewing the STH150N10F7-2 datasheet, STH150N10F7-2 pinout, STH150N10F7-2 application, or STH150N10F7-2 equivalent, key selection criteria include R_DS(on) at 10 V drive, Crss/Ciss ratio for EMI robustness, thermal resistance (0.6 °C/W j-case), and H2PAK-2 mounting requirements for high-power PCB layouts.

Technical Context

This device uses STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while reducing internal capacitances-C_iss = 8115 pF, C_rss = 67 pF-enabling efficient high-frequency switching up to 100 kHz in hard-switched topologies. Its low Crss/Ciss ratio (0.0082) suppresses voltage spikes during commutation.

The MOSFET supports continuous 110 A drain current at both 25 °C and 100 °C case temperature, with a 175 °C max junction rating and 440 A pulsed capability. Its integrated source-drain diode exhibits 70 ns reverse recovery time and 165 nC Q_rr under 100 A/µs di/dt, enabling synchronous rectification in high-efficiency SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V and 60 V bus systems with 20 % derating margin for transients
R_DS(on) typ.	3.4 mΩ @ V_GS = 10 V - Enables <1.9 W conduction loss at 77 A RMS in 12 V output stage
Q_g	117 nC - Requires ≥2 A peak gate driver for <100 ns turn-on with 4.7 Ω gate resistor
E_AS	495 mJ - Withstands unclamped inductive switching events up to L·I²/2 = 495 mJ without failure
R_thj-case	0.6 °C/W - Allows 250 W dissipation with ≤150 °C ΔT from junction to heatsink base
C_rss/C_iss	0.0082 - Reduces Miller-induced shoot-through risk and improves noise immunity in noisy environments
t_r/t_f	57 ns / 33 ns - Enables <200 ns total switching transition for >500 kHz PWM in resonant converters

Pinout & Package

H2PAK-2 is a surface-mount, thermally enhanced power package with isolated tab (drain), two source pins, and one gate pin. The copper-tab design enables direct thermal coupling to external heatsinks or copper pour, supporting >200 W power handling with proper PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain (D)	Exposed copper pad - electrically and thermally connected to drain; must be routed to high-voltage net and heatsink
Pin 1	Source (S)	Main source connection - carries full load current; requires wide copper trace for 110 A continuous
Pin 2	Gate (G)	Control input - sensitive to ESD; requires local 100 nF decoupling and gate resistor (4.7–10 Ω typical)
Pin 3	Source (S)	Secondary source connection - reduces source inductance and improves switching stability in high-di/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.4 mΩ typ. - Reduces I²R losses by >30 % vs. prior-generation 100 V MOSFETs at same current density
Low Crss/Ciss ratio	0.0082 - Minimizes Miller plateau duration and dv/dt-induced false turn-on in half-bridge configurations
High avalanche ruggedness	495 mJ single-pulse - Eliminates need for external snubbers in flyback and LLC primary-side switching
Enhanced thermal performance	0.6 °C/W j-case - Enables compact heatsink design with <10 K rise at 200 W dissipation
Fast body diode	70 ns t_rr, 165 nC Q_rr - Supports ZVS operation and reduces reverse recovery losses in synchronous rectifiers

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage for 5–10 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET hybrid bridge, handling 110 A peak phase current.

Use Value: 3.4 mΩ R_DS(on) cuts conduction loss by 2.4 W per device vs. 4.5 mΩ alternatives, improving system efficiency by 0.8 % at full load.

Use Scenario: Primary-side switch in 1.5 kW server AC-DC front-end using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched 100 V primary switch with 500 kHz burst-mode operation during light load.

Use Value: Low Crss/Ciss ratio ensures stable gate control under 100 V/ns dv/dt, preventing spurious turn-on during transformer leakage spikes.

Telecom DC-DC Converters

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 48 V input, 12 V output non-isolated buck converter delivering 100 A to baseband processor rails.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in continuous conduction mode at 300 kHz.

Use Value: Fast 70 ns body diode recovery enables zero-voltage switching transitions, reducing switching loss by 35 % compared to standard Si MOSFETs.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-current, high-reliability boost switch subjected to repetitive unclamped inductive stress.

Use Value: 495 mJ E_AS rating allows safe operation without external clamping circuits, simplifying board layout and BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH110N10P	R_DS(on) = 4.2 mΩ (higher), Q_g = 132 nC (higher), R_thj-case = 0.75 °C/W	Lower efficiency at high current; requires larger heatsink for same power	Prefer when legacy IXYS footprint compatibility is required over minimal R_DS(on)
IRFP150MPBF	R_DS(on) = 39 mΩ (11× higher), TO-247 package, no Crss/Ciss optimization	Unsuitable for >100 kHz switching; limited to 20–30 A continuous use	Only consider for low-frequency, low-cost replacements where efficiency and size are secondary

Compared with IXFH110N10P and IRFP150MPBF, STH150N10F7-2 delivers superior conduction and switching efficiency in high-frequency, high-current applications due to its 3.4 mΩ R_DS(on), optimized capacitance profile, and 0.6 °C/W thermal resistance-enabling smaller heatsinks and higher power density designs.

Availability

STH150N10F7-2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for STH150N10F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications including server PSUs, industrial inverters, and EV charging systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH150N10F7-2 supports 110 A continuous drain current at T_C = 100 °C, matching its 25 °C rating due to its optimized thermal design and low R_DS(on) temperature coefficient. This is confirmed in Table 2 of the official datasheet (DocID025859 Rev 3, page 3).

Does this MOSFET require a negative gate turn-off voltage?

No. The device specifies ±20 V absolute maximum gate-source voltage (V_GS), but standard operation uses 0 V to +10 V or +12 V for turn-on and 0 V for turn-off. A negative gate voltage is not required or recommended, as the threshold voltage (2.5–4.5 V) ensures clean turn-off at 0 V.

Can the H2PAK-2 package be soldered using standard reflow profiles?

Yes. The H2PAK-2 package is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. Its thermal mass and copper-tab construction require controlled ramp rates (≤2 °C/s) and extended time above liquidus (60–90 s) to ensure complete solder joint formation on the large drain tab.

Is the body diode suitable for synchronous rectification in a 300 kHz buck converter?

Yes. With 70 ns reverse recovery time and 165 nC Q_rr at 110 A, the intrinsic body diode supports synchronous rectification up to 300 kHz in buck converters. Its low Q_rr minimizes cross-conduction loss and EMI generation, as verified in Figure 15 and Table 7 of the datasheet.

STH150N10F7-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8115 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH150N10F7-2 FAQ

1.How can I place an order for STH150N10F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH150N10F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH150N10F7-2 reliable?

The price and inventory of STH150N10F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH150N10F7-2 is usually 5 days.

3.What payment methods are accepted for STH150N10F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH150N10F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH150N10F7-2?

STH150N10F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH150N10F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH150N10F7-2?

For technical support, including STH150N10F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH150N10F7-2 requirements.

6.How does Aetrix verify that STH150N10F7-2 is sourced from the original manufacturer or authorized distributors?

All STH150N10F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH150N10F7-2 meets industry standards.

7.What is the process for return or replacement of STH150N10F7-2?

All STH150N10F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH150N10F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH150N10F7-2 part is unused and in its original packaging.

Return procedure for STH150N10F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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