Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STH15NB50FI

Part No.:
STH15NB50FI
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
ISOWATT-218-3
Datasheet:
AetrixSTH15NB50FI.pdf
Description:
MOSFET N-CH 500V 10.5A ISOWAT218
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,889

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STH15NB50FI from STMicroelectronics is an N-channel 500 V, 10.5 A (Tc = 100 °C), 0.33 Ω RDS(on) PowerMESH™ MOSFET in ISOWATT218 package, designed for high-speed switching in high-voltage DC-AC converters and welding equipment power stages.

For engineers reviewing the STH15NB50FI datasheet, STH15NB50FI pinout, STH15NB50FI application, or STH15NB50FI equivalent, key selection criteria include its 4000 V isolation rating, 150 °C max junction temperature, 850 mJ single-pulse avalanche energy, and low 27 nC gate-drain charge enabling efficient hard-switching at 250–400 V bus voltages.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process with strip layout and edge termination to achieve minimum RDS(on)/area and exceptional dv/dt immunity (4 V/ns). Its 0.33 Ω typical on-resistance is specified at VGS = 10 V and ID = 7.5 A, with gate threshold voltage tightly distributed between 3–5 V.

The device integrates a robust body diode with 1.6 V forward voltage at 15 A and 680 ns reverse recovery time under 100 A/µs di/dt - critical for snubberless inductive turn-off in motor drives and UPS inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - supports 400 V DC bus with 25% margin for transient overvoltage in industrial SMPS and welder outputs.
RDS(on)0.33 Ω (typ) - enables <1.5 W conduction loss at 10.5 A continuous drain current at Tc = 100 °C.
Qgd27 nC - minimizes Miller-induced switching delay and improves controllability during hard commutation.
EAS850 mJ - withstands unclamped inductive switching stress without failure, verified per JEDEC JESD24-11.
VISO4000 V DC - provides reinforced insulation for primary-secondary barrier in isolated AC-DC and DC-AC topologies.
Tj(max)150 °C - allows operation in sealed enclosures or high-ambient environments up to 85 °C with proper heatsinking.
Ciss2600 pF (typ) - balances switching speed and EMI generation in 20–100 kHz power stage designs.

Pinout & Package

STH15NB50FI uses the ISOWATT218 package - a through-hole, insulated case variant of TO-247 with creepage/clearance optimized for high-voltage isolation. The package features three leads: Drain (pin 1), Gate (pin 2), Source (pin 3), with pin 1 electrically isolated from the metal tab.

Pin/TerminalCircuit RoleDesign Meaning
1 (Drain)High-side switch nodeConnected to HV DC bus or transformer primary; carries full load current and withstands 500 V blocking.
2 (Gate)Control inputReceives 10 V logic-level drive; ±30 V rating permits robust gate driver design with margin against transients.
3 (Source)Power return / referenceServes as local ground for gate driver; tied to low-side switch or shunt resistor for current sensing.

Key Features

FeatureDesign Value
100% avalanche testedEach unit validated for 14.6 A repetitive avalanche current and 850 mJ single-pulse energy - ensures ruggedness in inductive fault conditions.
Extremely high dv/dt capabilityRated 4 V/ns - suppresses false turn-on during fast voltage transients in half-bridge and LLC resonant circuits.
Minimized gate chargeTotal Qg = 60 nC (typ), Qgd = 27 nC - reduces driver power loss and enables >100 kHz switching with standard gate drivers.
Very low intrinsic capacitancesCoss = 330 pF, Crss = 40 pF - lowers switching losses and improves zero-voltage switching (ZVS) margin in resonant topologies.
±30 V gate-source ratingSupports gate drive with active clamping or negative turn-off bias - critical for reliability in high-noise industrial environments.

Applications

Welding Equipment InvertersUninterruptible Power Supplies (UPS)

Use Scenario: High-current DC-AC inversion in IGBT/MOSFET-based inverter stages for arc stability and dynamic response control.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage, operating at 20–50 kHz with 400 V DC link.

Use Value: 850 mJ avalanche energy and 4 V/ns dv/dt rating prevent shoot-through and latch-up during short-circuit events in open-loop arc initiation.

Use Scenario: Online double-conversion UPS systems requiring high-efficiency, high-reliability power switching in battery-to-AC and rectifier-to-battery paths.

IC Role / Device Role / Timing Role: Bidirectional switch in buck-boost or flyback-derived battery charger/inverter modules.

Use Value: 4000 V isolation rating eliminates need for external isolation transformers in Class I safety-compliant designs.

Industrial Motor DrivesHigh-Voltage SMPS

Use Scenario: Low-voltage (<100 V) motor control with high bus voltage (>300 V) supply, e.g., servo amplifiers with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling 10.5 A continuous current with fast body diode recovery.

Use Value: 680 ns trr and 9 µC Qrr reduce switching losses and EMI during freewheeling in PWM-controlled PMSM drives.

Use Scenario: Primary-side switch in 500 W–1 kW telecom or industrial SMPS using LLC or asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main transistor with 500 V VDSS and low Coss.

Use Value: 330 pF Coss and 0.33 Ω RDS(on) jointly enable >94% efficiency at 100 kHz while maintaining thermal margin at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW15NB50Same die, TO-247 package (Rthj-case = 0.66 °C/W vs. ISOWATT218's 1.56 °C/W); higher continuous current rating (14.6 A @ Tc = 25 °C).Requires external isolation for primary-secondary barrier; suited for non-isolated or transformer-coupled designs.Select when thermal performance outweighs isolation needs and PCB layout permits larger footprint.
IPP120N15N3G150 V VDSS, 120 A ID, 1.2 mΩ RDS(on); different voltage class and technology (OptiMOS™ 3).Not suitable for 400–500 V bus applications; intended for low-voltage high-current motor drives.Reject for 500 V systems; only consider if redesigning to lower bus voltage with higher current density.

Compared with STW15NB50 and IPP120N15N3G, STH15NB50FI uniquely combines 500 V rating, 4000 V isolation, and 0.33 Ω RDS(on) in a single package - making it irreplaceable in space-constrained, safety-critical high-voltage inverters where creepage and thermal management must coexist.

Availability

STH15NB50FI is available at Aetrix Electronics and suitable for welding equipment inverters, uninterruptible power supplies (UPS), and industrial motor drives requiring stable component supply across extended production lifecycles.

Supply support for STH15NB50FI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The PowerMESH™ MOSFET product line targets high-reliability, high-efficiency power conversion - specifically engineered for ruggedized switching in welding, UPS, and motor control systems where avalanche robustness and isolation integrity are non-negotiable.

FAQ

Is STH15NB50FI pin-compatible with STW15NB50?

No - STH15NB50FI uses the ISOWATT218 package with insulated case and 3-pin layout (Drain-Gate-Source), while STW15NB50 uses standard TO-247 with electrically connected tab. Mechanical mounting, thermal path, and isolation requirements differ fundamentally; PCB redesign is required for substitution.

What is the maximum recommended gate resistor value for reliable switching?

For 400 V VDD, 15 A ID, and RG = 4.7 Ω (per datasheet test condition), the gate resistor should not exceed 10 Ω to maintain <35 ns fall time and avoid excessive Qgd-driven Miller plateau duration. Higher values increase switching losses and risk shoot-through in bridge configurations.

Does STH15NB50FI require a negative gate turn-off voltage?

No - the ±30 V gate rating provides margin, but the device operates reliably with 0 V to +10 V gate drive. Negative turn-off (e.g., –5 V) is optional and used only in noisy environments to improve noise immunity; it does not affect RDS(on) or switching speed.

Can STH15NB50FI replace obsolete STP15NB50 in existing designs?

No - STP15NB50 is TO-220 packaged (Rthj-case ≈ 2.5 °C/W) with different pinout and no isolation. STH15NB50FI's ISOWATT218 footprint, 4000 V isolation, and 1.56 °C/W thermal resistance require mechanical, thermal, and safety revalidation before integration.

STH15NB50FI Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
ISOWATT-218-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
80W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ISOWATT-218

STH15NB50FI FAQ

1.How can I place an order for STH15NB50FI through Aetrix?

Please submit a Request for Quotation (RFQ) for STH15NB50FI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH15NB50FI reliable?

The price and inventory of STH15NB50FI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH15NB50FI is usually 5 days.

3.What payment methods are accepted for STH15NB50FI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH15NB50FI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH15NB50FI?

STH15NB50FI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH15NB50FI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH15NB50FI?

For technical support, including STH15NB50FI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH15NB50FI requirements.

6.How does Aetrix verify that STH15NB50FI is sourced from the original manufacturer or authorized distributors?

All STH15NB50FI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH15NB50FI meets industry standards.

7.What is the process for return or replacement of STH15NB50FI?

All STH15NB50FI units undergo pre-shipment inspection (PSI). If there is an issue with STH15NB50FI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH15NB50FI part is unused and in its original packaging.

Return procedure for STH15NB50FI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STH15NB50FI Tags

  • STH15NB50FI
  • STH15NB50FI PDF
  • STH15NB50FI Datasheet
  • STH15NB50FI Specifications
  • STH15NB50FI Images
  • STMicroelectronics
  • STMicroelectronics STH15NB50FI
  • Buy STH15NB50FI
  • STH15NB50FI Price
  • STH15NB50FI Distributor
  • STH15NB50FI Supplier
  • STH15NB50FI Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER