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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH170N8F7-2

Name: STH170N8F7-2
Brand: STMicroelectronics
SKU: STH170N8F7-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH170N8F7-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH170N8F7-2.pdf

Description:: MOSFET N-CH 80V 120A H2PAK-2

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Product details

Overview

STH170N8F7-2 from STMicroelectronics is an N-channel 80 V, 120 A, 0.0028 Ω typ. R_DS(on) Power MOSFET in H²PAK-2 package, utilizing STripFET™ F7 trench technology for ultra-low conduction loss and fast switching. It delivers 250 W total dissipation at T_C = 25 °C and supports unclamped inductive switching with 35 A non-repetitive avalanche current, suited for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STH170N8F7-2 datasheet, STH170N8F7-2 pinout, STH170N8F7-2 application, or STH170N8F7-2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Cr_ss/C_iss ratio for EMI robustness, thermal resistance (R_thj-case = 0.6 °C/W), safe operating area (SOA) limits, and source-drain diode recovery performance (t_rr = 54 ns, Q_rr = 78 nC).

Technical Context

This MOSFET employs an enhanced trench-gate STripFET™ F7 structure that simultaneously reduces R_DS(on) and gate charge (Q_g = 120 nC), enabling high-frequency synchronous rectification in 48 V industrial power supplies. Its low Cr_ss/C_iss ratio (78/8710 ≈ 0.009) minimizes Miller-induced shoot-through risk during hard switching.

The device is rated for continuous operation up to T_J = 175 °C and features high avalanche ruggedness (E_AS = 615 mJ), supporting reliable operation in unclamped inductive load circuits without external snubbers-critical for BLDC motor phase-legs and telecom hot-swap controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V nominal bus systems with 20 % overvoltage margin.
R_DS(on) typ.	0.0028 Ω @ V_GS = 10 V - Enables <1.7 W conduction loss at 80 A, reducing heatsink requirements in high-current POL converters.
I_D cont.	120 A @ T_C = 25 °C - Supports high-current single-phase output stages without paralleling devices.
Q_g	120 nC - Low gate charge enables efficient driving with standard 1-A gate drivers at ≥200 kHz switching frequencies.
t_rr	54 ns - Fast body diode recovery minimizes cross-conduction losses in synchronous buck topologies.
R_thj-case	0.6 °C/W - Allows direct mounting to cold plates; junction-to-case thermal path dominates system thermal design.

Pinout & Package

H²PAK-2 is a surface-mount, thermally enhanced package with isolated tab (drain-connected), three solder terminals, and optimized copper layout for low-inductance, high-current PCB routing. The package integrates a large exposed drain pad for direct thermal coupling to heatsinks or copper planes.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain (D)	Electrically and thermally connected to internal die drain; must be routed to high-current, low-impedance ground/power plane.
1	Source (S)	Main source terminal; connects to low-side return path; used with TAB to define main current loop in half-bridge layouts.
2	Gate (G)	Control input; requires low-inductance gate loop (<5 nH) and 10 V ±20 % drive for specified R_DS(on).
3	Source (S)	Secondary source connection; reduces source inductance in high-di/dt applications; tied to Pin 1 externally.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.0028 Ω typ. at 10 V drive enables >98 % efficiency in 12–48 V input, 1–5 V output DC-DC stages at 60–100 A.
Low Cr_ss/C_iss ratio	78 pF / 8710 pF = 0.009 - Reduces Miller plateau duration and improves noise immunity in noisy motor control environments.
High avalanche energy rating	E_AS = 615 mJ - Permits operation in unclamped inductive switching without external clamping, simplifying gate driver design.
Fast body diode recovery	t_rr = 54 ns, Q_rr = 78 nC - Limits reverse recovery loss and associated EMI in synchronous rectifiers above 100 kHz.

Applications

Server VRM Phase Legs

Industrial BLDC Motor Inverters

Use Scenario: High-density 48 V input, 0.8–1.2 V output multiphase buck converters delivering up to 300 A per CPU/GPU.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved multiphase topology; switches at 500–800 kHz with precise dead-time control.

Use Value: 0.0028 Ω R_DS(on) cuts conduction loss by 35 % vs. comparable 3.5 mΩ MOSFETs, directly improving VRM full-load efficiency by 0.8–1.2 %.

Use Scenario: 24–48 V battery-powered 3-phase inverters for industrial pumps, fans, and conveyors (5–15 kW range).

IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET bridge; handles 120 A peak phase current with 10 µs turn-off delay (t_d(off) = 79 ns).

Use Value: 0.6 °C/W R_thj-case allows direct cold-plate mounting, eliminating thermal interface material and reducing junction temperature rise by 15–20 °C under continuous load.

Telecom Hot-Swap Controllers

EV Onboard Charger (OBC) PFC Stages

Use Scenario: Input-stage protection for 48 V telecom rectifiers and distributed power systems requiring inrush limiting and fault isolation.

IC Role / Device Role / Timing Role: Main pass transistor in active OR-ing/hot-swap IC-controlled circuit; operates in linear mode during inrush, then fully on.

Use Value: 175 °C max junction temperature and 35 A non-repetitive avalanche rating enable robust fault handling without latch-up during short-circuit events.

Use Scenario: Boost switch in 3.3 kW two-stage OBCs with 400 V DC-link, operating at 100–200 kHz with SiC diode output rectification.

IC Role / Device Role / Timing Role: High-efficiency, high-current boost switch; driven by isolated gate driver with 10 V logic-level compatibility.

Use Value: 120 nC Q_g and 54 ns t_rr reduce switching loss by 22 % compared to legacy 5 mΩ FETs, enabling higher frequency operation without efficiency penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH120N08X3	R_DS(on) = 3.0 mΩ typ., Q_g = 115 nC, TO-247 package, R_thj-case = 0.45 °C/W	Higher thermal resistance than H²PAK-2; requires larger heatsink footprint but offers higher single-pulse avalanche rating (E_AS = 1.1 J)	Select when ultimate avalanche robustness is prioritized over board space and thermal interface simplicity.
IRFP4868PbF	R_DS(on) = 3.2 mΩ typ., Q_g = 145 nC, TO-247 package, no specified Cr_ss/C_iss ratio	Higher gate charge increases driver loss; lacks documented EMI-optimized capacitance ratio and SOA curves	Select only for legacy designs where footprint compatibility with TO-247 is mandatory and switching frequency remains below 100 kHz.

Compared with IXFH120N08X3 and IRFP4868PbF, the STH170N8F7-2 provides superior board-level thermal integration via H²PAK-2, lower R_DS(on), and verified EMI resilience-making it optimal for space-constrained, high-frequency, high-reliability industrial and computing power stages.

Availability

STH170N8F7-2 is available at Aetrix Electronics and suitable for server VRM phase legs, industrial BLDC motor inverters, and telecom hot-swap controllers requiring stable component supply across multi-year production cycles.

Supply support for STH170N8F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STripFET™ F7 product line targets high-efficiency, high-current power conversion with emphasis on low R_DS(on), fast switching, and ruggedness in compact packages-specifically engineered for next-generation datacenter, EV, and industrial motor control systems.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but ST specifies 10 V as the nominal gate drive for achieving the published R_DS(on) of 0.0028 Ω. Operation above 15 V increases gate oxide stress and accelerates wear-out; sustained use beyond 18 V voids reliability guarantees. For robustness in noisy environments, a 12 V gate drive with active clamping is commonly implemented.

Can STH170N8F7-2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing. Successful parallel operation requires matched PCB trace inductance (<1 nH difference), symmetrical gate drive paths, and individual 5–10 Ω gate resistors. Thermal coupling between devices must be minimized to avoid thermal runaway; derating to 100 A per device is advised in shared heatsink layouts.

Does the H²PAK-2 package require thermal vias under the drain tab?

No-thermal vias are not required or recommended. The H²PAK-2 drain tab is designed for direct, low-thermal-resistance contact with external heatsinks or thick copper planes (≥2 oz). Adding vias disrupts the uniform thermal path and introduces interfacial resistance; ST's recommended footprint (Figure 20) specifies solid copper fill only, with no via patterns beneath the tab area.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes-the body diode exhibits t_rr = 54 ns and Q_rr = 78 nC at T_j = 150 °C, enabling clean commutation in CCM synchronous buck converters up to 300 kHz. However, its forward voltage (V_SD = 1.2 V at 120 A) is higher than Schottky alternatives; for highest efficiency, external low-V_F diodes are used only during startup or fault conditions, not steady-state operation.

STH170N8F7-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8710 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH170N8F7-2 FAQ

1.How can I place an order for STH170N8F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH170N8F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH170N8F7-2 reliable?

The price and inventory of STH170N8F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH170N8F7-2 is usually 5 days.

3.What payment methods are accepted for STH170N8F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH170N8F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH170N8F7-2?

STH170N8F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH170N8F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH170N8F7-2?

For technical support, including STH170N8F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH170N8F7-2 requirements.

6.How does Aetrix verify that STH170N8F7-2 is sourced from the original manufacturer or authorized distributors?

All STH170N8F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH170N8F7-2 meets industry standards.

7.What is the process for return or replacement of STH170N8F7-2?

All STH170N8F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH170N8F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH170N8F7-2 part is unused and in its original packaging.

Return procedure for STH170N8F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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