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STMicroelectronics STH180N10F3-2
- Part No.:
- STH180N10F3-2
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STH180N10F3-2.pdf
- Description:
- MOSFET N-CH 100V 180A H2PAK-2
- Quantity:
- Payment:
- Shipping:
Inventory:614
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Product details
Overview
STH180N10F3-2 from STMicroelectronics is an N-channel 100 V, 4.5 mΩ (max), 180 A Power MOSFET in H²PAK-2 package, fabricated with STripFET™ F3 technology. It delivers ultra-low RDS(on), 100% avalanche-tested ruggedness, and optimized gate charge for high-efficiency switching in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the STH180N10F3-2 datasheet, STH180N10F3-2 pinout, STH180N10F3-2 application, or STH180N10F3-2 equivalent, key selection criteria include its 3.9 mΩ typical RDS(on), 315 W total power dissipation at TC = 25 °C, 114.6 nC total gate charge, 20 V/ns dv/dt rating, and -55 to 175 °C operating junction temperature range.
Technical Context
This device operates as a high-current, high-voltage switching element with a 100 V drain-source breakdown voltage and ±20 V gate-source voltage rating. Its thermal resistance of 0.48 °C/W (junction-to-case) enables efficient heat transfer to heatsinks in high-power topologies.
The MOSFET features integrated body diode with 1.5 V forward voltage at 120 A and 83.4 ns reverse recovery time at 150 °C, supporting synchronous rectification and fast-switching inductive load control. Safe operating area (SOA) is defined up to 100 µs pulse width at TJ = 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum continuous drain-source blocking voltage for 48 V–72 V bus systems |
| RDS(on) max | 4.5 mΩ - Ensures ≤0.81 W conduction loss at 180 A, critical for thermal management in high-current inverters |
| ID (TC = 25 °C) | 180 A - Continuous current capability at case temperature 25 °C, enabling single-device 10 kW+ switch-mode designs |
| Qg | 114.6 nC - Total gate charge determines drive strength requirement; compatible with standard 1–2 A gate drivers |
| EAS | 350 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching transients |
| RthJC | 0.48 °C/W - Low junction-to-case thermal resistance supports direct mounting to copper baseplates in high-power modules |
| dv/dt | 20 V/ns - High peak diode recovery voltage slope tolerance reduces risk of spurious turn-on in half-bridge configurations |
Pinout & Package
H²PAK-2 package: thermally enhanced surface-mount outline with exposed drain tab (D), gate (G), and source (S) terminals. Tab is electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (D) | Drain | Primary high-current output and main thermal interface; must be soldered to large copper pour or heatsink |
| G (Pin 1) | Gate | Control input requiring <115 nC charge; sensitive to ESD; routed with low-inductance trace |
| S (Pins 2 & 3) | Source | Power return path and gate reference; dual pins reduce source inductance for high di/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.9 mΩ typ. at VGS = 10 V - Reduces conduction losses by >25% vs. prior-generation 100 V MOSFETs in same package |
| 100% avalanche tested | 350 mJ single-pulse energy - Guarantees ruggedness under unclamped inductive switching without derating |
| Optimized gate charge | Qgd/Qgs = 0.83 - Improves Miller immunity and enables faster, more predictable switching transitions |
| High dv/dt immunity | 20 V/ns - Prevents false turn-on during hard commutation in bridge-leg configurations |
| Extended temperature range | -55 to 175 °C TJ - Supports operation in automotive under-hood and industrial motor drive environments |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Three-phase inverter stage in 15–30 kW servo drives and pump controllers. IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT replacement topology, handling 180 A peak phase current. Use Value: 4.5 mΩ RDS(on) cuts conduction loss by ~1.2 W per device vs. comparable 100 V MOSFETs, reducing heatsink size by 30%. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V, 5 kW telecom power supply. IC Role / Device Role / Timing Role: Secondary-side power switch in phase-shifted full-bridge topology, operating at 100–200 kHz. Use Value: 83.4 ns trr and 295.7 nC Qrr minimize body-diode conduction loss and associated switching spikes. |
| EV Onboard Charger | Uninterruptible Power Supply |
|
Use Scenario: AC-DC PFC boost stage and DC-DC isolation stage in 11 kW OBC for battery electric vehicles. IC Role / Device Role / Timing Role: High-current switching transistor in interleaved totem-pole PFC and LLC resonant converter. Use Value: 175 °C TJ rating and 0.48 °C/W RthJC allow sustained 120 A operation at elevated ambient temperatures inside sealed enclosures. |
Use Scenario: Static bypass and inverter output stage in 10 kVA three-phase UPS systems. IC Role / Device Role / Timing Role: Fault-tolerant power switch capable of withstanding short-circuit events and line surges. Use Value: 350 mJ EAS and 720 A IDM enable reliable operation during grid fault conditions without external crowbar protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH180N10P | RDS(on) = 4.8 mΩ (max), Qg = 132 nC, RthJC = 0.55 °C/W | Higher gate charge increases driver loss; slightly lower thermal performance limits peak current density | Preferred where legacy IXYS footprint compatibility is required and 10% higher RDS(on) is acceptable |
| IPB180N10N3 G | RDS(on) = 4.2 mΩ (typ), Qg = 105 nC, but only rated to 150 °C TJ | Limited junction temperature restricts use in sealed, high-ambient environments above 85 °C | Better for cost-sensitive consumer-grade SMPS where extended temperature margin is not required |
Compared with STH180N10F3-2, IXFH180N10P trades 7% higher conduction loss for broader second-source availability, while IPB180N10N3 G offers marginally better RDS(on) but sacrifices 25 °C of thermal headroom-critical for automotive and industrial deployments demanding long-term reliability at high ambient.
Availability
STH180N10F3-2 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and EV onboard chargers requiring stable component supply, high-current ruggedness, and extended temperature operation.
Supply support for STH180N10F3-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with over 40 years of industrial power device innovation.
This device belongs to ST's STripFET™ F3 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor control, renewable energy inverters, and electric vehicle power systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STH180N10F3-2 supports 120 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS7317 Rev 3. This derating reflects thermal limitations of the H²PAK-2 package and ensures safe operation within SOA boundaries at elevated temperatures.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage of 2–4 V and is fully enhanced at VGS = 10 V. While ±20 V gate-source voltage is rated, stable turn-off is achieved with 0 V gate drive; applying negative voltage is optional and used only to improve noise immunity in high-dv/dt environments.
Can the H²PAK-2 package be mounted directly to an aluminum heatsink without insulating hardware?
No. The exposed drain tab is electrically connected to the MOSFET's drain terminal. Direct mounting to a conductive heatsink creates a short unless the heatsink is isolated or the system design accommodates drain-referenced thermal interface. Insulating pads or ceramic substrates are required for grounded heatsink configurations.
Is the body diode suitable for synchronous rectification in a 100 kHz LLC converter?
Yes. With 1.5 V forward voltage at 120 A and 83.4 ns reverse recovery time at 150 °C, the integrated body diode meets timing and loss requirements for synchronous rectification in high-frequency LLC topologies-provided gate drive timing precisely controls conduction overlap to avoid shoot-through.
STH180N10F3-2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 114.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6665 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 315W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-2
STH180N10F3-2 FAQ
1.How can I place an order for STH180N10F3-2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STH180N10F3-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STH180N10F3-2 reliable?
The price and inventory of STH180N10F3-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH180N10F3-2 is usually 5 days.
3.What payment methods are accepted for STH180N10F3-2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH180N10F3-2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STH180N10F3-2?
STH180N10F3-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STH180N10F3-2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STH180N10F3-2?
For technical support, including STH180N10F3-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH180N10F3-2 requirements.
6.How does Aetrix verify that STH180N10F3-2 is sourced from the original manufacturer or authorized distributors?
All STH180N10F3-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH180N10F3-2 meets industry standards.
7.What is the process for return or replacement of STH180N10F3-2?
All STH180N10F3-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH180N10F3-2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STH180N10F3-2 part is unused and in its original packaging.
Return procedure for STH180N10F3-2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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